CRMICRO-CRST033N08N
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CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
85V
•ꢀUsesꢀCRM(CQ)ꢀadvancedꢀSkyMOS1ꢀtechnology
•ꢀExtremelyꢀlowꢀonꢁresistanceꢀR
DS(on)
•ꢀExcellentꢀQ
g
xR
DS(on)ꢀ
product(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀcriteria
R
DS(on)
I
Dꢀ
2.5mꢂ
160A
Applications
•ꢀSynchronousꢀRectificationꢀforꢀAC/DCꢀQuickꢀCharger
•ꢀBatteryꢀmanagement
•ꢀUPSꢀ(UninterrupibleꢀPowerꢀSupplies)
100% Avalanche Tested
CRST033N08N
CRSS031N08N
Package Marking and Ordering Information
Partꢀ#
Marking
Package
TOꢁ220
TOꢁ263
ReelꢀSize
TapeꢀWidth
N/A
Qty
Packing
Tube
CRST033N08N
CRSS031N08N
N/A
N/A
50pcs
50pcs
ꢁ
ꢁ
Tube
N/A
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drainꢁsourceꢀvoltage
85
V
Continuousꢀdrainꢀcurrent
T
C
ꢀ=ꢀ25°Cꢀ(Siliconꢀlimit)
T
C
ꢀ=ꢀ25°Cꢀ(Packageꢀlimit)
T
C
ꢀ=ꢀ100°Cꢀ(Siliconꢀlimit)
208ꢀ
160
I
D
A
131ꢀ
Pulsedꢀdrainꢀcurrentꢀ(T
C
ꢀ=ꢀ25°C,ꢀt
p
ꢀlimitedꢀbyꢀT
jmax
)
I
Dꢀpulse
E
AS
640ꢀ
400ꢀ
A
mJ
V
Avalancheꢀenergy,ꢀsingleꢀpulseꢀ(L=0.5mH,ꢀRg=25
Ω
)
[1]
GateꢁSourceꢀvoltage
V
GS
±20
Powerꢀdissipationꢀ(T
C
ꢀ=ꢀ25°C)
P
tot
227ꢀ
W
°C
T
j
ꢀ,ꢀ
T
stg
Operatingꢀjunctionꢀandꢀstorageꢀtemperature
ꢁ55…+150
Notes:1.EASꢀwasꢀtestedꢀatꢀTjꢀ=ꢀ25
℃
,ꢀIDꢀ=ꢀ40A.
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
0.55ꢀ
62
Unit
R
thJC
Thermalꢀresistance,ꢀjunctionꢀ–ꢀcase.
°C/W
R
thJA
Thermalꢀresistance,ꢀjunctionꢀ–ꢀambient(min.ꢀfootprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drainꢁsourceꢀbreakdownꢀ
voltage
BV
DSS
V
GS
=0V,ꢀI
D
=250uA
V
DS
=V
GS
,I
D
=250uA
85
ꢁ
ꢁ
V
V
V
GS(thꢀ)
Gateꢀthresholdꢀvoltage
2.2
3
3.8
V
DS
=80V,V
GS
=0V
T
j
=25°C
Zeroꢀgateꢀvoltageꢀdrainꢀ
current
I
DSS
ꢁ
ꢁ
0.05
ꢁ
1
ꢃA
nA
T
j
=125°C
10
Gateꢁsourceꢀleakageꢀ
current
I
GSS
V
GS
=±20V,V
DS
=0V
V
GS
=10V,ꢀI
D
=80A
ꢁ
±10
±100
Drainꢁsourceꢀonꢁstateꢀ
resistance
R
DS(on)
ꢁ
ꢁ
ꢁ
2.5ꢀ
2.3ꢀ
144
3.0ꢀ
2.8ꢀ
ꢁ
TOꢁ220
mꢂ
S
TOꢁ263
g
fs
V
DS
=5V,I
D
=80A
Transconductance
Dynamic Characteristic
InputꢀCapacitance
C
iss
ꢁ
ꢁ
8930
1746
ꢁ
ꢁ
V
GS
=0V,ꢀV
DS
=40V,ꢀ
f=1MHz
C
oss
OutputꢀCapacitance
pF
ReverseꢀTransferꢀ
Capacitance
C
rss
ꢁ
81
ꢁ
Q
G
Q
gs
Q
gd
t
d(on)
t
r
GateꢀTotalꢀCharge
GateꢁSourceꢀcharge
GateꢁDrainꢀcharge
Turnꢁonꢀdelayꢀtime
Riseꢀtime
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
130
44
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
ꢁ
V
GS
=10V,ꢀV
DS
=40V,ꢀ
I
D
=80A,ꢀf=1MHz
nC
30
30
108
85
V
GS
=10V,ꢀV
DD
=40V,ꢀ
R
G_ext
=3.0ꢂ
ns
ꢂ
t
d(off)
t
f
Turnꢁoffꢀdelayꢀtime
Fallꢀtime
120
V
GS
=0V,ꢀV
DS
=0V,ꢀ
f=1MHz
R
G
Gateꢀresistance
ꢁ
2.1
ꢁ
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
BodyꢀDiodeꢀForwardꢀ
Voltage
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀTime
BodyꢀDiodeꢀReverseꢀ
RecoveryꢀCharge
V
SD
t
rr
V
GS
=0V,I
SD
=80A
ꢁ
0.93
1.4
V
ꢁ
ꢁ
84
ꢁ
ꢁ
ns
nC
I
F
=80A,ꢀ
dI/dt=100A/ꢃs
Q
rr
226
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Figꢀ2:ꢀTransferꢀCharacteristics
Figꢀ1:ꢀOutputꢀCharacteristics
350
400
10V
8V
7V
360
320
280
240
200
160
120
80
V
DS
=5V
300
6.5V
250
200
150
100
5.5V
4.5V
25°C
125°C
50
0
40
0
3.5V
3
0
1
2
4
5
0
1
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
3:ꢀRds(on)ꢀvsꢀDrainꢀCurrentꢀandꢀ
Figꢀ4:ꢀRds(on)ꢀvsꢀGateꢀVoltage
12
GateꢀVoltage
4.0ꢀ
I
D
=80A
3.5ꢀ
10
8
V
GS
=10V
3.0ꢀ
2.5ꢀ
2.0ꢀ
1.5ꢀ
1.0ꢀ
0.5ꢀ
0.0ꢀ
6
125°C
4
2
25°C
0
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140
160
V
GS
(V)
I
D
(A)
Figꢀ6:ꢀCapacitanceꢀCharacteristics
Figꢀ5:ꢀRds(on)ꢀvs.ꢀTemperature
2.4ꢀ
10000
1000
100
I
D
=80A
Ciss
2.2ꢀ
2.0ꢀ
1.8ꢀ
1.6ꢀ
1.4ꢀ
1.2ꢀ
1.0ꢀ
0.8ꢀ
Coss
V
GS
=10V
V
GS
=0V
f=1MHz
Crss
10
0
10
20
30
40
50
60
70
80
0
25
50
75
100
125
150
175
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Figꢀ8:ꢀBodyꢁdiodeꢀForwardꢀ
Characteristics
Figꢀ7:ꢀGateꢀChargeꢀCharacteristics
10
100
V
DS
=40V
I
D
=80A
8
6
4
2
0
10
125
˚C
25
˚C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0
30
60
90
120
150
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Figꢀ10:ꢀDrainꢀCurrentꢀDerating
Figꢀ9:ꢀPowerꢀDissipation
180
250
160
140
120
100
80
200
150
100
50
60
V
GS
≥10V
40
20
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Figꢀ11:ꢀSafeꢀOperatingꢀArea
1000
1us
Limited by
Rds(on)
10us
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Figꢀ12:ꢀMax.ꢀTransientꢀThermalꢀImpedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1Eꢁ05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Package Outline: TO-220-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
b
4.30ꢀ
1.20ꢀ
2.20ꢀ
0.69ꢀ
1.00ꢀ
0.33ꢀ
14.70ꢀ
8.59ꢀ
11.75ꢀ
4.80ꢀ
1.45ꢀ
2.90ꢀ
0.95ꢀ
1.60ꢀ
0.65ꢀ
16.20ꢀ
9.65ꢀ
13.60ꢀ
0.169ꢀ
0.047ꢀ
0.087ꢀ
0.027ꢀ
0.039ꢀ
0.013ꢀ
0.579ꢀ
0.338ꢀ
0.463ꢀ
0.189ꢀ
0.057ꢀ
0.114ꢀ
0.037ꢀ
0.063ꢀ
0.026ꢀ
0.638ꢀ
0.380ꢀ
0.535ꢀ
b2
c
D
D1
D2
e
2.54ꢀBSC.
0.100ꢀBSC.
E
E1
H1
L
9.60ꢀ
7.00ꢀ
10.60ꢀ
8.46ꢀ
0.378ꢀ
0.276ꢀ
0.244ꢀ
0.496ꢀ
0.106ꢀ
0.478ꢀ
0.417ꢀ
0.333ꢀ
0.276ꢀ
0.583ꢀ
0.150ꢀ
0.650ꢀ
6.20ꢀ
7.00ꢀ
12.60ꢀ
2.70ꢀ
14.80ꢀ
3.80ꢀ
L1
L2
12.13ꢀ
16.50ꢀ
Q
P
2.40ꢀ
3.50ꢀ
3.10ꢀ
3.90ꢀ
0.094ꢀ
0.138ꢀ
0.122ꢀ
0.154ꢀ
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Package Outline: TO-263
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
4.86ꢀ
0.25ꢀ
2.79ꢀ
0.94ꢀ
1.35ꢀ
0.65ꢀ
1.40ꢀ
9.45ꢀ
8.17ꢀ
Min.
Max.
A
A1
A2
b
4.30ꢀ
0.00ꢀ
2.34ꢀ
0.68ꢀ
1.15ꢀ
0.33ꢀ
1.17ꢀ
8.38ꢀ
6.90ꢀ
0.169ꢀ
0.000ꢀ
0.092ꢀ
0.027ꢀ
0.045ꢀ
0.013ꢀ
0.046ꢀ
0.330ꢀ
0.272ꢀ
0.191ꢀ
0.010ꢀ
0.110ꢀ
0.037ꢀ
0.053ꢀ
0.026ꢀ
0.055ꢀ
0.372ꢀ
0.322ꢀ
b2
c
c2
D
D1
e
2.54ꢀBSC.
0.100ꢀBSC.
E
9.78ꢀ
6.50ꢀ
14.61ꢀ
2.24ꢀ
0.70ꢀ
1.00ꢀ
0.00ꢀ
10.50ꢀ
8.60ꢀ
15.88ꢀ
3.00ꢀ
1.60ꢀ
1.78ꢀ
0.25ꢀ
0.385ꢀ
0.256ꢀ
0.575ꢀ
0.088ꢀ
0.028ꢀ
0.039ꢀ
0.000ꢀ
0.413ꢀ
0.339ꢀ
0.625ꢀ
0.118ꢀ
0.063ꢀ
0.070ꢀ
0.010ꢀ
E1
H
L
L1
L2
L3
©China Resources Microelectronics (Chongqing) Limited
Page 9
CRST033N08N,CRSS031N08N
SkyMOS1ꢀNꢁMOSFETꢀ85V,ꢀ2.5mꢂ,ꢀ160A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Majorꢀchanges
2018ꢁ09ꢁ13
2018ꢁ12ꢁ17
2019ꢁ05ꢁ27
Releaseꢀofꢀformalꢀversion.
AddꢀTOꢁ263ꢀinformation
2.0
3.0
Supplementꢀpackageꢀoutlineꢀinfo.
Disclaimer
Unlessꢀotherwiseꢀspecifiedꢀinꢀtheꢀdatasheet,ꢀtheꢀproductꢀisꢀdesignedꢀandꢀqulifiedꢀasꢀaꢀstandardꢀcommercialꢀ
productꢀandꢀisꢀnotꢀintendedꢀforꢀuseꢀinꢀapplicationsꢀthatꢀrequireꢀextraordinaryꢀlevelsꢀofꢀqualityꢀandꢀreliability,ꢀ
suchꢀasꢀautomotive,ꢀaviation/aerospaceꢀandꢀlifeꢁsupportꢀdevicesꢀorꢀsystems.
Anyꢀandꢀallꢀsemicondutorꢀproductsꢀhaveꢀcertainꢀprobabilityꢀtoꢀfailꢀorꢀmalfunction,ꢀwhichꢀmayꢀresultꢀinꢀpersonalꢀ
injury,ꢀdeathꢀorꢀpropertyꢀdamage.ꢀCustomerꢀareꢀsolelyꢀresponsibleꢀforꢀprovidingꢀadequateꢀsafeꢀmeasuresꢀwhenꢀ
designꢀtheirꢀsystems.ꢀ
CRM(CQ)ꢀreservesꢀtheꢀrightꢀtoꢀimproveꢀproductꢀdesign,ꢀfunctionꢀandꢀreliabilityꢀwithoutꢀnotice.
©China Resources Microelectronics (Chongqing) Limited
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