CRMICRO-CRTD10DN10L
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CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
100V
67mΩ
15A
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
R
DS(on) typ.
I
D
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Package Marking and Ordering Information
Part #
Marking
Package
TO-252
Reel Size
Tape Width
N/A
Qty
Packing
Reel
CRTD10DN10L
CRTD10DN10L
N/A
2500pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drain-source voltage
100
V
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
15
40
9
I
D
A
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
I
D pulse
E
AS
60
A
mJ
V
Avalanche energy, single pulse (L=0.1mH, Rg=25
Ω
)
Gate-Source voltage
7
±20
V
GS
Power dissipation (T
C
= 25°C)
P
tot
40
W
°C
T
j
,
T
stg
Operating junction and storage temperature
-55…+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
T
sold
260
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
3.12
105
Unit
R
thJC
Thermal resistance, junction – case.
°C/W
R
thJA
Thermal resistance, junction – ambient(min. footprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drain-source breakdown
voltage
BV
DSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
100
1.4
–
–
V
V
V
GS(th )
Gate threshold voltage
2
2.6
V
DS
=100V,V
GS
=0V
T
j
=25°C
Zero gate voltage drain
current
I
DSS
–
–
0.01
–
1
µA
nA
T
j
=150°C
50
Gate-source leakage
current
I
GSS
–
±10
±100
VGS=±20V,VDS=0V
V
GS
=10V, I
D
=8A,
Tj=25°C
–
67
150
74
100
180
110
–
Drain-source on-state
resistance
R
DS(on)
mΩ
S
Tj=150°C
V
GS
=4.5V, I
D
=5A,
V
DS
=10V,I
D
=8A
–
–
g
fs
Transconductance
22
Dynamic Characteristic
Input Capacitance
C
iss
–
–
596
36
–
–
V
GS
=0V, V
DS
=50V,
f=1MHz
C
oss
Output Capacitance
pF
Reverse Transfer
Capacitance
C
rss
–
29
–
Q
G
Q
gs
Q
gd
t
d(on)
t
r
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
–
–
–
–
–
–
–
15
3.0
4.5
8.5
21
–
–
–
–
–
–
–
V
GS
=10V, V
DS
=50V,
I
D
=8A, f=1MHz
nC
V
GS
=10V, V
DD
=50V,
R
G_ext
=2.7Ω
ns
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
20
30
V
GS
=0V, V
DS
=0V,
f=1MHz
R
G
Gate resistance
–
2.3
–
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
min.
max.
Body Diode Forward
Voltage
V
SD
I
S
V
GS
=0V,I
SD
=8A
–
0.9
1.3
Body Diode Continuous
Forward Current
15
–
A
T
C
= 25°C
Body Diode Reverse
Recovery Time
t
rr
–
–
28
29
ns
nC
I
F
=8A, dI/dt=100A/µs
Body Diode Reverse
Recovery Charge
Q
rr
–
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 2: Transfer Characteristics
Fig 1: Output Characteristics
30
30
24
18
12
6
10V
V
DS
=5V
6V
4.0V
24
18
12
6
V
GS
=3.5V
150°C
25°C
3.0V
0
0
0
2
4
6
8
10
2.0
3.0
4.0
5.0
6.0
7.0
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
200
170
140
110
80
140
I
D
=8A
120
100
80
150°C
V
GS
=4.5V
25°C
V
GS
=10V
60
50
40
3
4
5
6
7
8
9
10
0
4
8
12
16
20
V
GS
(V)
I
D
(A)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
1000
3.0
V
GS
=10V
I
D
=8A
2.5
2.0
1.5
1.0
0.5
0.0
Ciss
100
Coss
Crss
V
GS
=0V
f=1MHz
10
0
20
40
60
80
100
-50
-25
0
25
50
75
100 125 150 175
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
1000
100
10
10
8
V
DS
=50V
I
D
=8A
6
150
˚C
25
˚C
4
2
0
1
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
3
6
9
12
15
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Fig 10: Drain Current Derating
Fig 9: Power Dissipation
16
45
40
35
30
25
20
15
10
5
14
12
10
8
6
4
V
GS
≥10V
2
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Fig 11: Safe Operating Area
100
1us
Limited by
Rds(on)
10us
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Fig 12: Max. Transient Thermal Impedance
D=0.5
0.2
1
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
0.001
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1E-06
1E-05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Package Outline: TO-252-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.15
0.00
0.76
0.60
0.65
5.00
0.45
0.36
5.80
5.00
Max.
2.45
0.15
1.36
0.91
1.15
5.64
0.61
0.66
6.30
6.00
Min.
0.085
0.000
0.030
0.024
0.026
0.197
0.018
0.014
0.228
0.197
Max.
0.096
0.006
0.054
0.036
0.045
0.222
0.024
0.026
0.248
0.236
A
A1
A2
b
b1
b2
c
c1
D
D1
e
2.29 BSC.
2.92 REF
0.090 BSC.
0.115 REF
E
6.30
6.90
0.248
0.272
E1
H
4.55
9.40
1.18
5.30
10.48
1.70
0.179
0.370
0.046
0.209
0.413
0.067
L
L1
L2
L3
0.36
0.72
0.66
1.35
0.014
0.028
0.026
0.053
L4
0.60
1.20
0.024
0.047
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRTD10DN10L
Trench N-MOSFET 100V, 67mΩ, 15A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Major changes
Release of formal version
2019/9/20
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability,
such as automotive, aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
