CRMICRO-CRTE120N06L
| Part # | CRMICRO-CRTE120N06L |
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CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
60V
• Uses CRM(CQ) advanced Trench MOS technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
R
DS(on) typ.
I
D
8.5mΩ
16A
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Package Marking and Ordering Information
Part #
Marking
Package
SOP-8
Reel Size
N/A
Tape Width
N/A
Qty
Packing
Reel
CRTE120N06L
TE120N06L
4000
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drain-source voltage
60
V
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
16
40
10
I
D
A
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
I
D pulse
E
AS
64
A
mJ
V
Avalanche energy, single pulse (L=0.5mH, Rg=25
Ω
)
Gate-Source voltage
60
±20
V
GS
Power dissipation (T
C
= 25°C)
P
tot
6
W
°C
T
j
,
T
stg
Operating junction and storage temperature
-55…+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
T
sold
260
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
22.04
56
Unit
R
thJC
Thermal resistance, junction – case.
°C/W
R
thJA
*
Thermal resistance, junction – ambient(min. footprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drain-source breakdown
voltage
BV
DSS
V
GS
=0V, I
D
=250uA
60
–
–
V
V
V
GS(th )
V
DS
=V
GS
,I
D
=250uA
V
DS
=60V,V
GS
=0V
T
j
=25°C
Gate threshold voltage
1.3
1.8
2.3
Zero gate voltage drain
current
I
DSS
–
–
0.02
–
1
µA
nA
T
j
=150°C
100
Gate-source leakage
current
I
GSS
V
GS
=±20V,V
DS
=0V
–
±10
±100
V
GS
=10V, I
D
=16A,
T
j
=25°C
–
–
–
–
8.5
16.7
10.5
69
10.5
20.5
12.5
–
Drain-source on-state
resistance
R
DS(on)
mΩ
S
T
j
=150°C
V
GS
=4.5V, I
D
=15A,
V
DS
=5V,I
D
=16A
g
fs
Transconductance
Dynamic Characteristic
Input Capacitance
C
iss
–
–
1940
197
–
–
V
GS
=0V, V
DS
=30V,
f=1MHz
C
oss
Output Capacitance
pF
Reverse Transfer
Capacitance
C
rss
–
142
–
Q
G
Q
gs
Q
gd
t
d(on)
t
r
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
–
–
–
–
–
–
–
45
9
–
–
–
–
–
–
–
V
GS
=10V, V
DS
=30V,
I
D
=16A, f=1MHz
nC
13
14
65
37
98
V
GS
=10V, V
DD
=30V,
R
G_ext
=2.7Ω, I
D
=16A
ns
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
V
GS
=0V, V
DS
=0V,
f=1MHz
R
G
Gate resistance
–
1.2
–
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
min.
max.
Body Diode Forward
Voltage
V
SD
I
S
V
GS
=0V,I
SD
=16A
–
0.8
1.3
Body Diode Continuous
Forward Current
16
–
A
T
C
= 25°C
Body Diode Reverse
Recovery Time
t
rr
–
–
27
25
ns
nC
I
F
=16A, dI/dt=100A/µ
s
Body Diode Reverse
Recovery Charge
Q
rr
–
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 2: Transfer Characteristics
Fig 1: Output Characteristics
200
180
120
60
T
j
=25°C
V
DS
=5V
10V
7.0V
160
120
80
Vgs=5.0V
4.0V
150°C
25°C
40
3.0V
0
0
0
1
2
3
4
5
1
2
3
4
5
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
30
25
20
15
10
5
12
I
D
=16A
T
j
=25°C
11
10
9
V
GS
=4.5V
150°C
V
GS
=7V
V
GS
=10V
25°C
8
7
3
4
5
6
7
8
9
10
5
15
25
35
45
55
65
V
GS
(V)
I
D
(A)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
10000
1000
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
=10V
I
D
=16A
Ciss
Coss
V
GS
=0V
f=1MHz
Crss
0
6
12
18
24
30
-50
-25
0
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
1000
100
10
10
8
V
DS
=30V
I
D
=16A
6
25
˚C
150
˚C
4
2
0
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
10
20
30
40
50
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Fig 10: Drain Current Derating
Fig 9: Power Dissipation
18
6
16
14
12
10
8
5
4
3
2
1
0
6
V
GS
≥10V
4
2
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Fig 11: Safe Operating Area
1us
Limited by
Rds(on)
10
1
10us
100us
1ms
10ms
DC
0.1
0.01
Single pulse
Tc=25
˚C
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Fig 12: Max. Transient Thermal Impedance
10
D=0.5
0.2
1
0.1
0.05
0.02
0.1
0.01
Single pulse
0.01
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Package Outline: SOP-8L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
1.35
0.10
1.25
0.33
0.17
4.80
Max.
1.75
0.25
1.65
0.51
0.25
5.00
Min.
0.053
0.004
0.049
0.013
0.007
0.189
Max.
0.069
0.010
0.065
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.27 BSC.
0.050 BSC.
E
E1
h
3.80
5.80
0.25
0.40
0°
4.00
6.20
0.50
1.27
8°
0.150
0.228
0.010
0.016
0°
0.157
0.244
0.020
0.050
8°
L
θ
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRTE120N06L
Trench N-MOSFET 60V, 8.5mΩ, 16A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Major changes
2018/4/24
Release of formal version
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability,
such as automotive, aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
