CRMICRO-CRTS095N12N
| Part # | CRMICRO-CRTS095N12N |
Download  | CRMICRO-CRTS095N12N |
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
120V
7mΩ
112A
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
R
DS(on) typ.
I
D
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Package Marking and Ordering Information
Part #
Marking
Package
TO-263
Reel Size
N/A
Tape Width
N/A
Qty
Packing
Reel
CRTS095N12N
CRTS095N12N
1000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drain-source voltage
120
V
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
112
160
71
I
D
A
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
I
D pulse
E
AS
448
256
A
mJ
V
Avalanche energy, single pulse (L=0.5mH, Rg=25
Ω
)
Gate-Source voltage
V
GS
±25
Power dissipation (T
C
= 25°C)
P
tot
254
W
°C
T
j
,
T
stg
Operating junction and storage temperature
-55…+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
T
sold
260
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
0.49
91
Unit
R
thJC
Thermal resistance, junction – case.
°C/W
R
thJA
*
Thermal resistance, junction – ambient(min. footprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drain-source breakdown
voltage
BV
DSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
120
2
–
–
V
V
V
GS(th )
Gate threshold voltage
3
4
V
DS
=120V,V
GS
=0V
T
j
=25°C
Zero gate voltage drain
current
I
DSS
–
–
0.08
–
1
µA
nA
T
j
=150°C
200
Gate-source leakage
current
I
GSS
V
GS
=±25V,V
DS
=0V
–
±10
±100
V
GS
=10V, I
D
=75A,
T
j
=25°C
Drain-source on-state
resistance
R
DS(on)
–
–
–
7
9.5
20
–
mΩ
S
T
j
=150°C
16
g
fs
V
DS
=5V,I
D
=75A
Transconductance
156
Dynamic Characteristic
Input Capacitance
C
iss
–
–
5996
410
–
–
V
GS
=0V, V
DS
=60V,
f=1MHz
C
oss
Output Capacitance
pF
Reverse Transfer
Capacitance
C
rss
–
133
–
Q
G
Q
gs
Q
gd
t
d(on)
t
r
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
–
–
–
–
–
–
–
127
32
–
–
–
–
–
–
–
V
GS
=10V, V
DS
=60V,
I
D
=75A, f=1MHz
nC
45
20
103
62
V
GS
=10V, V
DD
=60V,
R
G_ext
=2.7Ω,I
D
=75A
ns
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
110
V
GS
=0V, V
DS
=0V,
f=1MHz
R
G
Gate resistance
–
1.7
–
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
min.
max.
Body Diode Forward
Voltage
V
SD
I
S
V
GS
=0V,I
SD
=75A
–
0.9
1.3
Body Diode Continuous
Forward Current
112
A
T
C
= 25°C
Body Diode Reverse
Recovery Time
t
rr
–
–
58
–
–
ns
nC
I
F
=75A, dI/dt=100A/µ
s
Body Diode Reverse
Recovery Charge
Q
rr
154
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 2: Transfer Characteristics
Fig 1: Output Characteristics
400
250
200
150
100
50
10V
7V
T
j
=25°C
V
DS
=5V
320
6V
240
160
V
GS
=5V
150°C
25°C
80
0
0
0
2
4
6
8
10
2
3
4
5
6
7
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
24
22
20
18
16
14
12
10
8
11
I
D
=75A
T
j
=25°C
10
9
150°C
V
GS
=7V
8
V
GS
=10V
25°C
7
6
4
6
4
5
6
7
8
9
10
0
50
100
150
200
250
V
GS
(V)
I
D
(A)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
100000
10000
1000
100
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=10V
I
D
=75A
Ciss
Coss
Crss
V
GS
=0V
f=1MHz
10
0
24
48
72
96
120
-50
-25
0
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
1000
10
8
V
DS
=60V
I
D
=75A
100
10
1
6
150
˚C
25
˚C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
26
52
78
104
130
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Fig 10: Drain Current Derating
Fig 9: Power Dissipation
120
300
100
80
250
200
150
100
50
60
40
V
GS
≥10V
20
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Fig 11: Safe Operating Area
1000
1us
Limited by
Rds(on)
10us
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Fig 12: Max. Transient Thermal Impedance
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single pulse
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1E-05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Package Outline: TO-263
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
4.30
4.86
0.169
0.191
A1
0.00
0.25
0.000
0.010
A2
b
2.34
0.68
1.15
0.33
1.17
8.38
6.90
2.79
0.94
1.35
0.65
1.40
9.45
8.17
0.092
0.027
0.045
0.013
0.046
0.330
0.272
0.110
0.037
0.053
0.026
0.055
0.372
0.322
b2
c
c2
D
D1
e
2.54 BSC.
0.100 BSC.
E
9.78
6.50
10.50
8.60
0.385
0.256
0.413
0.339
E1
H
L
14.61
2.24
0.70
1.00
0.00
15.88
3.00
1.60
1.78
0.25
0.575
0.088
0.028
0.039
0.000
0.625
0.118
0.063
0.070
0.010
L1
L2
L3
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRTS095N12N
Trench N-MOSFET 120V, 7mΩ, 112A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Major changes
2018/10/30
Release of formal version
Increase the environmental labeling, I
S
, T
sold
, I
GSS
test value
at V
GS
=-25V;Update R
DS(on),
Q
G
/Q
gs
/Q
gd,
g
fs
,V
SD
,t
d(on)
/t
r
/t
d(off
)/t
f
and t
rr
/Q
rr
test current from 50A to 75A;Update Fig3/Fig4/
Fig7 of Typical Performance Characteristics;Update Package
Outline.
2.0
2019/7/22
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability,
such as automotive, aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
