CRMICRO-CRTT030N04L
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CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
40V
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
R
DS(on) typ.
I
D
2.9mΩ
80A
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Package Marking and Ordering Information
Part #
Marking
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Qty
Packing
Tube
CRTT030N04L
CRTT030N04L
50pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drain-source voltage
40
V
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
188
80
I
D
A
84
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
I
D pulse
E
AS
320
210
A
mJ
V
Avalanche energy, single pulse (L=0.5mH, Rg=25
Ω
)
Gate-Source voltage
V
GS
±20
Power dissipation (T
C
= 25°C)
P
tot
160
W
°C
T
j
,
T
stg
Operating junction and storage temperature
-55…+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
T
sold
260
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
0.78
84
Unit
R
thJC
Thermal resistance, junction – case.
°C/W
R
thJA
*
Thermal resistance, junction – ambient(min. footprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drain-source breakdown
voltage
BV
DSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
40
–
–
V
V
V
GS(th )
Gate threshold voltage
1.3
2
2.7
V
DS
=40V,V
GS
=0V
T
j
=25°C
Zero gate voltage drain
current
I
DSS
–
–
0.05
–
1
µA
nA
T
j
=150°C
10
Gate-source leakage
current
I
GSS
V
GS
=±20V,V
DS
=0V
–
±10
±100
V
GS
=10V, I
D
=40A,
T
j
=25°C
–
–
–
–
2.9
4.9
3.5
209
3.3
5.9
4.5
–
Drain-source on-state
resistance
R
DS(on)
mΩ
S
T
j
=150°C
V
GS
=4.5V, I
D
=30A
V
DS
=5V,I
D
=40A
g
fs
Transconductance
Dynamic Characteristic
Input Capacitance
C
iss
–
–
5734
686
–
–
V
GS
=0V, V
DS
=20V,
f=1MHz
C
oss
Output Capacitance
pF
Reverse Transfer
Capacitance
C
rss
–
338
–
Q
G
Q
gs
Q
gd
t
d(on)
t
r
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
–
–
–
–
–
–
–
126
24
–
–
–
–
–
–
–
V
GS
=10V, V
DS
=20V,
I
D
=40A, f=1MHz
nC
31
20
106
68
V
GS
=10V, V
DD
=20V,
R
G_ext
=2.7Ω
ns
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
112
V
GS
=0V, V
DS
=0V,
f=1MHz
R
G
Gate resistance
–
0.8
–
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
min.
max.
Body Diode Forward
Voltage
V
SD
I
S
V
GS
=0V,I
SD
=40A
–
0.9
1.3
Body Diode Continuous
Forward Current
80
–
A
T
C
= 25°C
Body Diode Reverse
Recovery Time
t
rr
–
–
29
28
ns
nC
I
F
=40A, dI/dt=100A/µ
s
Body Diode Reverse
Recovery Charge
Q
rr
–
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 2: Transfer Characteristics
Fig 1: Output Characteristics
300
300
240
180
120
60
10V
6.0V
4.5V
V
DS
=5V
T
j
=25°C
240
180
120
60
4.0V
150°C
25°C
V
GS
=3.0V
0
0
0
1
2
3
4
5
1
2
3
4
5
6
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Fig 4: Rds(on) vs Gate Voltage
Gate Voltage
20
18
16
14
12
10
8
6
I
D
=40A
T
j
=25°C
5
V
GS
=4V
4
V
GS
=7V
3
V
GS
=10V
6
150°C
25°C
4
2
1
2
0
3
4
5
6
7
8
9
10
0
60
120
180
240
300
V
GS
(V)
I
D
(A)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
100000
10000
1000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
=10V
I
D
=40A
V
GS
=0V
f=1MHz
Ciss
Coss
Crss
100
0
8
16
24
32
40
-50
-25
0
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
1000
10
100
10
8
V
DS
=20V
I
D
=40A
150
˚C
6
4
2
0
25
˚C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
80
100
120
140
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Fig 10: Drain Current Derating
Fig 9: Power Dissipation
90
180
80
70
60
50
40
30
160
140
120
100
80
60
V
GS
≥10V
40
20
10
0
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Fig 11: Safe Operating Area
1000
1us
Limited by
Rds(on)
10us
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Fig 12: Max. Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
0.001
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1E-05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Package Outline: TO-220-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
b
4.30
1.20
2.20
0.69
1.00
0.33
14.70
8.59
11.75
4.80
1.45
2.90
0.95
1.60
0.65
16.20
9.65
13.60
0.169
0.047
0.087
0.027
0.039
0.013
0.579
0.338
0.463
0.189
0.057
0.114
0.037
0.063
0.026
0.638
0.380
0.535
b2
c
D
D1
D2
e
2.54 BSC.
0.100 BSC.
E
E1
H1
L
9.60
7.00
10.60
8.46
0.378
0.276
0.244
0.496
0.106
0.478
0.417
0.333
0.276
0.583
0.150
0.650
6.20
7.00
12.60
2.70
14.80
3.80
L1
L2
12.13
16.50
Q
P
2.40
3.50
3.10
3.90
0.094
0.138
0.122
0.154
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRTT030N04L
Trench N-MOSFET 40V, 2.9mΩ, 80A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Major changes
2018/12/5
Release of formal version
Increase the environmental labeling, I
S
, T
sold
, I
GSS
test value
at V
GS
=-20V and R
DS(on)
test value at V
GS
=4.5V ;Update
R
DS(on),
Q
G
/Q
gs
/Q
gd,
g
fs
,V
SD
,t
d(on)
/t
r
/t
d(off
)/t
f
and t
rr
/Q
rr
test
current from 50A to 40A;Update Fig3/Fig4/ Fig7 of Typical
Performance Characteristics;Update Package Outline.
2.0
2019/6/28
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability,
such as automotive, aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
