CRMICRO-CRTT360N20N
| Part # | CRMICRO-CRTT360N20N |
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CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Features
Product Summary
V
DS
200V
30mΩ
50A
• Uses CRM(CQ) advanced Trench technology
• Extremely low on-resistance R
DS(on)
• Excellent Q
g
xR
DS(on)
product(FOM)
• Qualified according to JEDEC criteria
R
DS(on) typ.
I
D
100% DVDS Tested
Applications
100% Avalanche Tested
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
Package Marking and Ordering Information
Part #
Marking
Package
TO-220
Reel Size
N/A
Tape Width
N/A
Qty
Packing
Tube
CRTT360N20N
CRTT360N20N
50pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
V
DS
Drain-source voltage
200
V
Continuous drain current
T
C
= 25°C (Silicon limit)
T
C
= 25°C (Package limit)
T
C
= 100°C (Silicon limit)
50
120
32
I
D
A
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
I
D pulse
E
AS
200
72
A
mJ
V
Avalanche energy, single pulse (L=0.5mH, Rg=25
Ω
)
Gate-Source voltage
V
GS
±25
Power dissipation (T
C
= 25°C)
P
tot
236
W
°C
T
j
,
T
stg
Operating junction and storage temperature
-55…+150
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
T
sold
260
°C
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Symbol
Max
0.53
84
Unit
R
thJC
Thermal resistance, junction – case.
°C/W
R
thJA
*
Thermal resistance, junction – ambient(min. footprint)
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Value
Symbol
Parameter
Unit
Test Condition
min.
typ.
max.
Static Characteristic
Drain-source breakdown
voltage
BV
DSS
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
200
2
–
–
V
V
V
GS(th )
Gate threshold voltage
3
4
V
DS
=200V,V
GS
=0V
T
j
=25°C
Zero gate voltage drain
current
I
DSS
–
–
0.05
–
1
µA
nA
T
j
=150°C
100
Gate-source leakage
current
I
GSS
V
GS
=±25V,V
DS
=0V
–
±10
±100
V
GS
=10V, I
D
=30A,
T
j
=25°C
Drain-source on-state
resistance
R
DS(on)
–
–
–
30
77
74
36
93
–
mΩ
S
T
j
=150°C
g
fs
V
DS
=10V,I
D
=30A
Transconductance
Dynamic Characteristic
Input Capacitance
C
iss
–
–
2575
176
–
–
V
GS
=0V, V
DS
=100V,
f=1MHz
C
oss
Output Capacitance
pF
Reverse Transfer
Capacitance
C
rss
–
47
–
Q
G
Q
gs
Q
gd
t
d(on)
t
r
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
–
–
–
–
–
–
–
54
17
18
14
56
35
51
–
–
–
–
–
–
–
V
GS
=10V, V
DS
=100V,
I
D
=30A, f=1MHz
nC
V
GS
=10V, V
DD
=100V,
R
G_ext
=2.7Ω,ID=30A
ns
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
V
GS
=0V, V
DS
=0V,
f=1MHz
R
G
Gate resistance
–
1.8
–
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Body Diode Characteristic
Value
typ.
Symbol
Parameter
Unit
V
Test Condition
min.
max.
Body Diode Forward
Voltage
V
SD
I
S
V
GS
=0V,I
SD
=30A
–
0.8
1.3
Body Diode Continuous
Forward Current
50
–
A
T
C
= 25°C
Body Diode Reverse
Recovery Time
t
rr
–
–
103
519
ns
nC
I
F
=30A, dI/dt=100A/µ
s
Body Diode Reverse
Recovery Charge
Q
rr
–
*The value of R
thJA
is measured by placing the device in a still air box which is one cubic foot.
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 2: Transfer Characteristics
Fig 1: Output Characteristics
150
150
120
90
60
30
0
10V
7.0V
T
j
=25°C
V
DS
=5V
120
90
60
30
0
6.0V
5.5 V
150°C
25°C
V
GS
=5.0V
0
4
8
12
16
20
3
4
5
6
7
8
V
DS
(V)
V
GS
(V)
Fig 3: Rds(on) vs Drain Current and
Gate Voltage
Fig 4: Rds(on) vs Gate Voltage
200
170
140
110
80
70
I
D
=30A
T
j
=25°C
60
50
40
30
20
150°C
V
GS
=6V
V
GS
=7V
25°C
V
GS
=10V
50
20
4
5
6
7
8
9
10
0
20
40
60
80
100
V
GS
(V)
I
D
(A)
Fig 6: Capacitance Characteristics
Fig 5: Rds(on) vs. Temperature
100000
10000
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=10V
I
D
=30A
Ciss
Coss
Crss
V
GS
=0V
f=1MHz
10
0
40
80
120
160
200
-50
-25
0
25
50
75
100
125
150
Tj – Junction Temperature (
°
C)
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Fig 8: Body-diode Forward
Characteristics
Fig 7: Gate Charge Characteristics
1000
10
V
DS
=50V
I
D
=30A
VDS=100V
8
6
4
2
0
100
10
1
150
˚C
25
˚C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
12
24
36
48
60
V
SD
– Diode Forward Voltage(V)
Qg (nC)
Fig 10: Drain Current Derating
Fig 9: Power Dissipation
60
250
50
40
30
20
200
150
100
50
V
GS
≥10V
10
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Tc – Case Temperature (
°
C
)
Tc – Case Temperature (
°
C
)
Fig 11: Safe Operating Area
1000
1us
Limited by
Rds(on)
10us
100
10
1
100us
1ms
10ms
DC
Single pulse
Tc=25
˚C
0.1
0.1
1
10
100
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Fig 12: Max. Transient Thermal Impedance
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
Single pulse
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
1E-05
0.0001
0.001
0.01
0.1
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Test Circuit & Waveform
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Package Outline: TO-220-3L
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
A2
b
4.30
1.20
2.20
0.69
1.00
0.33
14.70
8.59
11.75
4.80
1.45
2.90
0.95
1.60
0.65
16.20
9.65
13.60
0.169
0.047
0.087
0.027
0.039
0.013
0.579
0.338
0.463
0.189
0.057
0.114
0.037
0.063
0.026
0.638
0.380
0.535
b2
c
D
D1
D2
e
2.54 BSC.
0.100 BSC.
E
E1
H1
L
9.60
7.00
10.60
8.46
0.378
0.276
0.244
0.496
0.106
0.478
0.417
0.333
0.276
0.583
0.150
0.650
6.20
7.00
12.60
2.70
14.80
3.80
L1
L2
12.13
16.50
Q
P
2.40
3.50
3.10
3.90
0.094
0.138
0.122
0.154
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRTT360N20N
Trench N-MOSFET 200V, 30mΩ, 50A
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
Major changes
Release of formal version
2019/8/23
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability,
such as automotive, aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
