CRMICRO-CS25N50ANR
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Silicon N-Channel Power MOSFET
CS25N50 ANR
R
○
General Description
：
V
DSS
500
25
V
A
CS25N50 ANR the silicon N-channel Enhanced
VDMOSFET, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P
（
N
）
, which accords with the RoHS standard.
Features
：
I
D
P
D
(T
C
=25
℃
)
R
DS(ON)Typ
300
0.21
W
Ω
Fast Switching
Low ON Resistance
(Rdso
n
≤
0.27
Ω
)
Low Gate Charge
(Typical Data:64 nC)
Low Reverse transfer capacitances
(Typical: 10pF)
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（
Tc= 25
℃
unless otherwise specified
）
：
Parameter
Symbol
V
DSS
Rating
Units
Drain-to-Source
V
o
ltage
500
V
A
Continuous Drain Current
25
I
D
Continuous Drain Current T
C
= 100 °C
Pulsed Drain Current
15.7
A
a1
100
A
I
DM
Gate-to-Source
V
o
ltage
V
GS
V
±
30
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
1500
mJ
V/ns
W
E
AS
a3
5.0
dv/dt
300
P
D
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
2.4
150
，
–
55 to 150
300
W/
℃
℃
T
J
，
T
stg
T
L
℃
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CS25N50 ANR
R
○
Electrical Characteristics
（
Tc= 25
℃
unless otherwise specified
）
：
OFF Characteristics
Rating
Typ.
—
Parameter
Test Conditions
Symbol
Units
Min.
500
—
Max.
—
V
GS
=0
V
,
I
D
=250µA
Drain to Source Breakdown
V
o
ltage
Bvdss Temperature Coefficient
V
DSS
V
V/
℃
µA
ID=250uA,Reference2
5
℃
0.6
—
Δ
BV
DSS
/
Δ
T
J
V
DS
=500
V
,
V
GS
= 0
V
,
T
a
= 25
℃
V
DS
=400
V
,
V
GS
= 0
V
,
T
a
= 125
℃
—
—
—
—
—
1
Drain to Source Leakage Current
I
DSS
—
—
—
100
100
µA
V
GS
=+30V
V
GS
=-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
I
GSS(F)
I
GSS(R)
nA
-100
nA
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
—
Typ. Max.
V
GS
=10
V
,
I
D
=12.5A
Drain-to-Source On-Resistance
Gate Threshold
V
o
ltage
R
DS(ON)
V
GS(TH)
0.21 0.27
Ω
V
DS
= V
GS
, I
D
= 250µA
2.0
—
4.0
V
Pulse width tp
≤
300µs,
δ≤
2%
Dynamic Characteristics
Rating
Typ.
18
Parameter
Test Conditions
Symbol
Units
S
Min.
—
Max.
—
V
DS
=15
V
,
I
D
=12.5A
Forward Trans conductance
Input Capacitance
g
fs
C
iss
C
oss
C
rss
—
3487
214
10
—
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Output Capacitance
—
—
pF
Reverse Transfer Capacitance
—
—
Resistive Switching Characteristics
Rating
Typ.
37.2
64.4
86.8
46
Parameter
Test Conditions
Symbol
Units
ns
Min.
—
Max.
—
Turn-on Delay Time
Rise Time
t
d(ON)
tr
t
d(OFF)
t
f
—
—
I
D
=25A V
DD
= 250V
R
G
=10
Ω
Turn-Off Delay Time
Fall Time
—
—
—
—
Total Gate Charge
Gate to Source Charge
Gate to Drain (
“
Miller
”
)Charge
Q
g
—
64
—
I
D
=25A V
DD
=400V
V
GS
= 10V
Q
gs
Q
gd
—
17
—
nC
—
23
—
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CS25N50 ANR
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Source-Drain Diode Characteristics
Rating
Typ.
—
Parameter
Test Conditions
Symbol
Units
Min.
—
Max.
25
100
1.5
—
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward
V
o
ltage
I
S
A
A
I
SM
V
SD
trr
—
—
I
S
=25A,V
GS
=0V
—
—
V
Reverse Recovery Time
—
490
6246
25.5
ns
n
C
A
I
S
=25A,T
j
= 25
℃
Reverse Recovery Charge
Qrr
I
RRM
—
—
dI
F
/dt=100A/us,
V
GS
=0V
Reverse Recovery Current
—
—
Pulse width tp
≤
300µs,
δ≤
2%
Parameter
Max.
Symbol
Units
Junction-to-Case
R
θ
0.42
40
℃
/W
℃
/W
JC
Junction-to-Ambient
R
θ
JA
a1
：
Repetitive rating; pulse width limited by maximum junction temperature
a2
：
L=10mH, I
D
=17.3A, Start T
J
=25
℃
a3
：
I
SD
=25A,di/dt
≤
100A/us,V
DD
≤
BV
DS,
Start T
J
=25
℃
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CS25N50 ANR
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Characteristics Curve
：
Figure 2
Maximum Power dissipation vs Case Temperature
Figure 1
Maximum Forward Bias Safe Operatin
g
A
rea
Figure Typical
Output Characteristics
4
Figure 3
Maximum Continuous Drain Current vs Case Temperature
Figure
4
T
ypical
Output Characteristics
Figure
5 Maximum
Effective Thermal Impedance , Junction to Case
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CS25N50 ANR
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Figure
7
Typical Body Diode Transfer Characteristics
Figure
6 Typical
Transfer Characteristics
Figure
9
Typical Drian to Source on Resistance
vs Junction Temperature
Figure
8
Typical Drain to Source ON Resistance
vs Drain Current
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CS25N50 ANR
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Figure 10
Typical Theshold
V
o
ltage vs Junction Temperature
Figure 11
Typical Breakdown
V
o
ltage vs Junction Temperature
Figure 13
Typical Gate Charge vs Gate to Source
V
o
ltage
Figure 12
Typical Capacitance vs Drain to Source
V
o
ltage
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CS25N50 ANR
R
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T
e
st Circuit and Waveform
：
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveforms
Figure 16. Resistive Switching
T
est Circuit
Figure 17. Resistive Switching Waveforms
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CS25N50 ANR
R
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Figure 18. Diode Reverse Recovery
T
est Circuit
Figure 19. Diode Reverse Recovery Waveform
Figure20.Unclamped Inductive Switching
T
est Circuit
Figure21.Unclamped Inductive Switching Waveform
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CS25N50 ANR
R
○
Package Information
：
V
a
lues(mm)
Items
MIN
15.00
19.20
4.60
1.40
0.90
0.50
2.00
3.00
3.00
1.20
2.70
19.00
5.25
3.10
MAX
16.00
20.60
5.00
1.60
1.10
0.70
2.20
3.20
3.70
1.70
2.90
21.00
5.65
3.30
A
B
C
D
E
F
G1
G2
H
I
L
*
N
*
：
adjustable
TO-3P(N)
Package
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CS25N50 ANR
R
○
The name and content of poisonous and harmful material in products
Hazardous Substance
Pb
Hg
Cd
≤
Cr(VI)
PBB
PBDE
DIBP
DEHP
DBP
BBP
Limit
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
≤
0.1%
0.01%
○
Lead Frame
Molding
Chip
○
○
○
○
×
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
○
Wire Bonding
Solder
○
○
○：
Means the hazardous material is under the criterion of
2011/65/EU
.
×：
Means the hazardous material exceeds the criterion of
2011/65/EU
.
Note
The plumbum element of solder exist in products presently, but within the allowed range
of Eurogroup’s R
oHS.
Warnings
1.
Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2.
When installing the heat sink, please pay attention to the torsional moment and the smoothness
of the heat sink.
3.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
Add
：
No.14 Liangxi RD. Wuxi, Jiangsu, China
Mail:214061
Tel: +86 0510-85807228
Fax: +86- 0510-85800864
Marketing Part
：
Post
：
214061
T
e
l
：
+86 0510-81805277/81805336
Fax: +86
0510-85800360/85803016
Application and Service
：
Post
：
214061
T
e
l
/ Fax
：
+86- 0510-81805243/81805110
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