CYSTECH-MTD120C10KQ8
| Part # | CYSTECH-MTD120C10KQ8 |
Download  | CYSTECH-MTD120C10KQ8 |
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 1/12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTD120C10KQ8
N-CH
100V
2.4A
P-CH
-100V
-2.8A
BV
DSS
I
D @
T
A
=25
°
C,
GS
=10V(-10V)
I
D @
T
C
=25
°
C,
GS
=10V(-10V)
3.4A
-3.9A
R
DSON(TY
P
.
)@
V
GS
=10V(-10V)
124m
Ω
102m
Ω
132m
Ω
122m
Ω
Features
•
Simple drive requirement
•
Low on-resistance
R
DSON(TY
P
.
)@
V
GS
=4.5V(-4.5V)
•
Fast switching speed
•
ESD protected gate
•
Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTD120C10KQ8
SOP-8
G
：
Gate S
：
Source D
：
Drain
Ordering Information
Device
Package
SOP-8
Shipping
MTD120C10KQ8-0-T3-G
2500 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25
°
C, unless otherwise noted)
Limits
Parameter
Symbol
Unit
N-channel
P-channel
Drain-Source Breakdown
V
o
ltage
Gate-Source
V
o
ltage
BV
DSS
V
GS
100
-100
V
±
20
±
20
3.4
2.1
-3.9
-2.5
T
C
=25
°
C, V
GS
=10V (-10V)
I
D
Continuous Drain Current
T
C
=100
°
C, V
GS
=10V (-10V)
A
2.4
1.9
12
-2.8
-2.2
-14
T
A
=25
°
C, V
GS
=10V (-10V)
T
A
=70
°
C, V
GS
=10V (-10V)
Continuous Drain Current
I
DSM
I
DM
P
D
(Note 2)
Pulsed Drain Current
(Note 1)
Power Dissipation
for Dual Operation, T
C
=25
°
C
Power Dissipation
for Dual Operation, T
C
=100
°
C
Power Dissipation
for Dual Operation, T
A
=25
°
C
Power Dissipation
for Dual Operation, T
A
=70
°
C
3.1
1.2
2
1.3
W
1.6
(Note 2)
0.9
(Note 3)
1.0
(Note 2)
0.6
(Note 3)
Power Dissipation
for Single Operation, T
A
=25
°
C
P
DSM
Power Dissipation
for Single Operation, T
A
=25
°
C
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+150
°
C
Thermal Data
Parameter
Symbol
V
a
lue
Unit
Thermal Resistance, Junction-to-case, max
R
th,j-c
40
78
(Note 2)
135
(Note 3)
°
C/W
Thermal Resistance, Junction-to-ambient, max
R
th,j-a
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width
≤
10s.
3.Surface
mounted on minimum copper pad, pulse width
≤
10s.
N-Channel Electrical Characteristics
(Tc=25
°
C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BV
DSS
V
GS(th)
I
GSS
100
1.0
–
–
–
–
–
1.5
–
–
–
–
V
V
V
GS
=0
V
,
I
D
=250
μ
A
2.5
±10
1
25
150
V
DS
=V
GS
, I
D
=250
μ
A
V
GS
=±20
V
,
V
DS
=0V
V
DS
=80
V
,
V
GS
=0V
V
DS
=70
V
,
V
GS
=0
V
,
T
j=125
°
C
I
D
=2A, V
GS
=10V
μ
A
I
DSS
124
*R
DS(ON)
*G
FS
m
Ω
–
–
132
5.9
160
–
I
D
=1.5A, V
GS
=4.5V
V
DS
=10
V
,
I
D
=2A
S
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 3/12
CYStech Electronics Corp.
Dynamic
Ciss
–
–
–
–
–
–
–
–
–
–
306
42
16
6
–
–
–
–
–
–
–
–
–
–
pF
ns
V
DS
=20
V
,
V
GS
=0, f=1MHz
Coss
Crss
*td
(ON)
*tr
*td
(OFF)
*tf
7
Ω
V
DS
=50
V
,
I
D
=1A, V
GS
=10
V
,
R
G
=6
29
13
9
1
2.6
*Qg
nC
V
DS
=80
V
,
I
D
=2.4A, V
GS
=10V
V
GS=
0
V
,
I
S
=2A
*Qgs
*Qgd
Body Diode
*V
SD
*I
S
–
–
–
0.79
–
–
1.3
2.4
12
V
A
*I
SM
*Pulse Test : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
P-Channel Electrical Characteristics
(Tc=25
°
C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BV
DSS
V
GS(th)
I
GSS
-100
-1.0
–
–
–
–
–
-1.9
–
–
–
–
V
GS
=0
V
,
I
D
=-250
μ
A
V
DS
=VGS, I
D
=-250
μ
A
V
GS
=±20
V
,
V
DS
=0V
V
DS
=-80
V
,
V
GS
=0V
V
DS
=-70
V
,
V
GS
=0
V
,
T
j=125
°
C
I
D
=-2A, V
GS
=-10V
V
-2.5
±10
-1
-25
130
μ
A
I
DSS
102
*R
DS(ON)
*G
FS
m
Ω
–
–
122
6.7
150
–
I
D
=-1.5A, V
GS
=-4.5V
V
DS
=-10
V
,
I
D
=-2A
S
Dynamic
Ciss
–
–
–
–
–
–
–
–
–
–
1243
126
59
22
10
45
16
25
3.4
7.7
–
–
–
–
–
–
–
–
–
–
pF
ns
V
DS
=-20
V
,
V
GS
=0, f=1MHz
Coss
Crss
*td
(ON)
*tr
*td
(OFF)
*tf
Ω
V
DS
=-50
V
,
I
D
=-1A, V
GS
=-10
V
,
R
G
=6
*Qg
nC
V
DS
=-80
V
,
I
D
=-2.8A, V
GS
=-10V
V
GS
=0
V
,
I
S
=-2A
*Qgs
*Qgd
Body Diode
*V
SD
*I
S
–
–
–
-0.75
–
–
-1.3
-2.8
-14
V
A
*I
SM
*Pulse Test : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 4/12
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
12
10
8
10V
9V
8V
7V
6V
5V
4V
V
GS
=3V
6
4
0.8
0.6
μ
I
D
=250 A,
2
V
GS
=0V
0
-75 -50 -25
0
25 50 75
100 125 150 175
0
1
2
3
4
5
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10000
1000
100
1.2
V
GS
=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
V
GS
=4.5V
GS
=10V
V
V
GS
=2.5V
Tj=150°C
V
GS
=3V
0
2
4
6
8
10
0.01
0.1
1
10
100
I
D
, Drain Current(A)
I
DR
, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
V
GS
=10V, I
D
=2A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
320
280
240
200
160
120
80
I
D
=2A
2
1.6
1.2
0.8
0.4
R
DSON
@Tj=25°C : 124 mΩ typ.
40
-75 -50 -25
0
25 50 75
100 125 150 175
0
2
4
6
GS
, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 5/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
1000
100
10
Ciss
I
D
=1mA
C
oss
0.8
0.6
0.4
μ
I
D
=250 A
Crss
-75 -50 -25
0
25 50 75
100 125 150 175
0.1
1
10
100
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
V
DS
=50V
8
6
4
2
0
10
1
V
DS
=80V
V
DS
=10V
Pulsed
Ta=25°C
0.1
0.01
I
D
=2.4A
0
2
4
6
8
10
0.001
0.01
0.1
1
10
I
D
, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3
2.5
2
100
R
DSON
Limited
10
1
μ
100 s
1ms
10ms
100ms
1s
1.5
1
0.1
T
A
=25°C
GS
=10V
θ
JA
=78°C/W
T
A
=25°C, Tj=150°C
θ
V
DC
0.01
0.001
0.5
0
V
GS
=10V,
JA
=78°C/W
R
Single Pulse
25
50
75
100
125
150
175
0.1
1
10
100
1000
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 6/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
12
10
8
1000
100
10
V
DS
=10V
T
J(M
A
X
)
=150°C
T
A
=25°C
θ
JA
=78°C/W
6
4
1
2
0
0.1
0
1
2
GS
, Gate-Source Voltage(V)
3
4
5
0.0001 0.001
0.01
0.1
1
10
100 1000
V
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
θ
θ
1.R
JA
(t)=r(t)*R
JA
0.1
0.1
2.Duty Factor, D=t1/t2
θ
3.T
JM
-T
A
=P
D
M
*R
JA
(t)
0.05
θ
4.R
JA
=78°C/W
0.02
0.01
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t
1
, Square Wave Pulse Duration(s)
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 7/12
CYStech Electronics Corp.
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
14
12
10
8
10V
9V
8V
7V
6V
5V
4V
6
-V
GS
=3V
4
0.8
0.6
μ
-I
D
=250 A,
2
V
GS
=0V
0
-75 -50 -25
0
25 50 75
100 125 150 175
0
1
2
3
4
5
-V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10000
1000
100
1.2
V
GS
=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
-V
GS
=3V
-V
GS
=4.5V
-V
GS
=10V
Tj=150°C
10
0
2
2
4
6
8
10
0.01
0.1
1
10
100
-I
D
, Drain Current(A)
-I
DR
, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
-V
GS
=10V, -I
D
=2A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
360
320
280
240
200
160
120
80
1.8
1.6
1.4
1.2
1
-I
D
=2A
0.8
0.6
0.4
R
DSON
@Tj=125°C : 102mΩ typ.
40
-60
-20
20
60
100
140
180
0
2
4
6
8
10
-V
GS
, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 8/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
Ciss
1.4
1.2
1
10000
1000
100
-I
D
=1mA
0.8
0.6
0.4
0.2
C
oss
μ
-I
D
=250 A
Crss
10
-75 -50 -25
0
25 50 75
100 125 150 175
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
V
DS
=-50V
V
DS
=-80V
8
6
4
2
0
1
-V
DS
=10V
Pulsed
0.1
I
D
=-2.8A
24
Ta=25°C
0.01
0
4
8
12
16
20
28
0.001
0.01
0.1
-I
D
, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3.5
3
100
R
DSON
Limited
10
1
μ
100 s
2.5
2
1ms
10ms
100ms
1.5
1
0.1
T
A
=25°C
1s
-V
GS
=10V
T
A
=25°C, Tj=150°C
0.01
0.001
DC
θ
JA
R
=78°C/W
θ
V
GS
=10V,
JA
=78°C/W
0.5
0
Single Pulse
25
50
75
100
125
150
175
0.1
1
10
100
1000
-V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 9/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
12
1000
-V
DS
=10V
10
T
J(M
A
X
)
=150°C
T
A
=25°C
100
θ
8
JA
=78°C/W
6
4
2
0
10
1
0.1
0.0001 0.001
0.01
0.1
1
10
100 1000
0
1
2
3
4
5
-V
GS
, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0 2
0.1
JA
1.R
θ
JA
(t)=r(t)*R
θ
2.Duty Factor, D=t
1
/t
2
3.T
JM
-T
A
=P
DM
*R
θ
JA
(t)
0.1
0.01
0.05
JA
=78°C/W
4.R
θ
0.02
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t
1
, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 10/12
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 11/12
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak
T
e
mperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5
°
C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(
T
s
max to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3
°
C/second max.
3
°
C/second max.
Preheat
−
T
e
mperature Min(T
S
min)
−
T
e
mperature Max(T
S
max)
−
Time(ts
min
to ts
max
)
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-180 seconds
Time maintained above:
−
T
e
mperature (T
L
)
−
Time (t
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
Peak
T
e
mperature(T
P
)
240 +0/-5
°
C
260 +0/-5
°
C
Time within 5
°
C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD120C10KQ8
CYStek Product Specification
Spec. No. : C945Q8
Issued Date : 2014.01.03
Revised Date : 2015.03.10
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
Top View
A
G
Marking:
I
C
B
H
J
D120
C10K
Device Name
Date Code
D
Front View
Part A
E
K
Part A
L
N
M
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Millimeters
Inches
DIM
Millimeters
Inches
Min. Max.
DIM
Min.
Max.
0.2007
Min.
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
Min.
Max.
0.20
0.70
0.25
0.52
0.50
0.13
0.15
A
B
C
D
E
F
0.1909
0.1515
0.2283
0.0480
0.0145
0.1472
0.0570
0.1889
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
I
J
0.0019
0.0118
0.0074
0.0145
0.0118
0.0031
0.0000
0.0078
0.0275
0.0098
0.0204
0.0197
0.0051
0.0059
0.05
0.30
0.19
0.37
0.30
0.08
0.00
0.1555
0.2441
0.0519
0.0185
0.1527
0.0649
0.2007
K
L
M
N
O
G
H
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: Pure tin plated.
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD120C10KQ8
CYStek Product Specification
