CYSTECH-MTN003N02Y3
| Part # | CYSTECH-MTN003N02Y3 |
Download  | CYSTECH-MTN003N02Y3 |
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 1/9
CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
BV
DSS
I
D
20V
560mA
290m
Ω
(typ)
440m
Ω
(typ)
845m
Ω
(typ)
MTN003N02Y3
R
DSON
@V
GS
=4
V
,
I
D
=300mA
R
DSON
@V
GS
=2.5
V
,
I
D
=300mA
R
DSON
@V
GS
=1.8
V
,
I
D
=300mA
Features
•
Simple drive requirement
•
Small package outline
•
ESD protected gate
•
Pb-free lead plating and halogen-free package
Symbol
Outline
MTN003N02Y3
SOT-723
D
G
：
Gate
S
：
Source
D
：
Drain
G
S
Ordering Information
Device
Package
SO
T
–
723
Shipping
8000 pcs / tape & reel
MTN003N02Y3-0-T5-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T5 : 8000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings
(
T
a
=25
°
C)
Parameter
Symbol
V
DS
Limits
20
±8
Unit
Drain-Source
V
o
ltage
Gate-Source
V
o
ltage
V
V
GS
560
400
2.5
Continuous Drain Current
@ T
A
=25
°
C, V
GS
=4.5V
(Note 3)
Continuous Drain Current
@ T
A
=85
°
C, V
GS
=4.5V
(Note 3)
Pulsed Drain Current
(Notes 1, 2)
I
D
mA
A
I
DM
T
A
=25
℃
150
Maximum Power Dissipation
(Note 3)
P
D
mW
T
A
=85
℃
80
ESD susceptibility
Operating Junction and Storage Temperature
2000
(Note 4)
-55~+150
V
Tj, Tstg
°
C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width
≤
300
μ
s, duty cycle
≤
2%.
3.Surface mounted on FR-4 board.
3.
Human body model, 1.5k
Ω
in series with 100pF
Thermal Performance
Parameter
Symbol
Rth,ja
Limit
833
Unit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
°
C/W
Electrical Characteristics (Tj=25
°
C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BV
DSS
∆
BV
DSS
/
∆
Tj
V
GS(th)
20
–
0.02
0.92
–
–
–
–
–
1.2
10
1
10
400
600
1200
–
V
V/
°
C
V
V
GS
=0, I
D
=250
μ
A
Reference to 25
°
C, I
D
=1mA
V
DS
=10
V
,
I
D
=1mA
–
0.5
–
–
–
±
±
I
GSS
V
GS
= 8
V
,
V
DS
=0
μ
A
V
DS
=20
V
,
V
GS
=0
I
DSS
V
DS
=16
V
,
V
GS
=0 (Tj=70
°
C)
V
GS
=4
V
,
I
D
=300mA
V
GS
=2.5
V
,
I
D
=300mA
–
–
290
440
*R
DS(ON)
*G
FS
m
Ω
–
–
845
0.9
V
GS
=1.8
V
,
I
D
=300mA
V
DS
=10
V
,
I
D
=300mA
S
Dynamic
Ciss
–
–
–
60
14
9
–
–
–
pF
V
DS
=10
V
,
V
GS
=0, f=1MHz
Coss
Crss
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 3/9
CYStech Electronics Corp.
t
d(ON)
t
r
t
d(OFF)
t
f
Qg
Qgs
Qgd
–
–
–
–
–
–
–
5
5
24
–
–
–
–
–
–
–
Ω
ns
V
DS
=10
V
,
I
D
=150mA, V
GS
=4VR
G
=10
18
0.76
0.074
0.27
nC
V
V
DS
=10
V
,
I
D
=250mA, V
GS
=4.5V
V
GS
=0
V
,
I
S
=100mA
Source-Drain Diode
*V
SD
–
0.75
1.2
*Pulse Test : Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
3.0
1.4
1.2
1
5V, 4.5V, 4V, 3.5V
μ
I
D
=250 A,
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=0V
V
GS
=3V
V
GS
=2.5V
V
GS
=2V
0.8
0.6
V
GS
=1V
3
V
GS
=1.5V
4
-75 -50 -25
0
25 50 75
100 125 150 175
0
1
2
5
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1600
1400
1200
1000
800
600
400
200
0
1
V
GS
=0V
Tj=25°C
0.8
V
GS
=1.8V
V
GS
=2.5V
0.6
0.4
0.2
0
Tj=150°C
V
GS
=4.5V
0
0.2
0.4
0.6
0.8
1
0.1 0.2
0.3 0.4
0.5 0.6
0.7 0.8
0.9
1
D
I
DR
, Reverse Drain Current (A)
I , Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
800
700
600
500
400
300
200
100
0
1.6
I
D
=300mA
1.4
1.2
1
V
GS
=4.5V, I
D
=300mA
V
GS
=1.8V, I
D
=300mA
V
GS
=2.5V, I
D
=300mA
0.8
0.6
-60
-20
20
60
100
140
180
0
2
4
6
8
10
V
GS
, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
Ciss
1.6
1.4
1.2
1
100
10
1
μ
I
D
=250 A
C
oss
Crss
0.8
0.6
0.4
-60 -40 -20
0
20 40 60 80
100 120 140 160
0.1
1
10
100
100
100
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Gate Charge Characteristics
10
10
T
J(M
A
X
)
=150°C
T
A
=25°C
8
6
4
2
0
8
6
4
2
0
θ
JA
R
=833°C/W
V
DS
=10V
I
D
=250mA
0
0.5
1
1.5
2
0.001
0.01
0.1
1
10
Pulse Width(s)
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
10
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
μ
100 s
1ms
0.1
0.01
10ms
100m
DC
T
A
=25°C, Tj=150°C,
θ
V
GS
=4.5V, R
JA
=833°C/W
Single Pulse
θ
JA
T
A
=25°C, V
GS
=4.5V, R
=833°C/W
0.001
0.01
0.1
1
10
25
50
75
100
125
150
175
V
DS
, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.2
0.15
0.1
6
5
4
3
2
1
0
V
DS
=5V
Mounted on FR-4 board
0.05
0
0
20
40
60
80 100
120 140 160
0
10
1
1
2
3
4
5
6
V
GS
, Gate-Source Voltage(V)
T
A
, Ambient Temperature(℃)
Forward Transfer Admittance vs Drain Current
V
DS
=5V
V
DS
=10V
0.1
Ta=25°C
Pulsed
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
Transient Thermal Response Curves
1
D=0.5
0.2
JA
1.R
θ
(t)=r(t)*R
θ
JA
0.1
0.1
2.Duty Factor, D=t
1
/t
2
0.05
JM
A
DM
3.T -T
=P *Z
θ
(t)
JA
=833
4.R
θ
JA
°C/W
0.02
0.01
0.01
0.001
Single Pulse
1.E-02
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
t , Square Wave Pulse Duration(s)
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak
T
e
mperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5
°
C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(
T
s
max to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3
°
C/second max.
3
°
C/second max.
Preheat
−
T
e
mperature Min(T
S
min)
−
T
e
mperature Max(T
S
max)
−
Time(ts
min
to ts
max
)
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-180 seconds
Time maintained above:
−
T
e
mperature (T
L
)
−
Time (t
L
)
183
°
C
60-150 seconds
240 +0/-5
°
C
217
°
C
60-150 seconds
260 +0/-5
°
C
Peak
T
e
mperature(T
P
)
Time within 5
°
C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6
°
C/second max.
6
°
C/second max.
8 minutes max.
6 minutes max.
Time 25
°
C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN003N02Y3
CYStek Product Specification
Spec. No. : C814Y3
Issued Date : 2012.05.15
Revised Date : 2018.04.17
Page No. : 9/9
CYStech Electronics Corp.
SOT-723 Dimension
Marking:
QT
3-Lead SOT-723
Plastic
Surface Mounted Package
CYStek Package Code: Y3
Style: Pin
1.Gate 2.Source 3.Drain
*Typical
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
Max.
Max.
0.020
0.002
0.011
0.015
0.006
Min.
Max.
1.250
1.250
0.850
Min.
Max.
0.049
0.049
0.033
A
A1
b
0.000
0.000
0.170
0.270
0.000
0.500
0.050
0.270
0.370
0.150
0.000
0.000
0.007
0.011
0.000
D
E
E1
e
1.150
1.150
0.750
0.045
0.045
0.030
b1
c
0.800*
7
°
REF
0.031*
7
°
REF
θ
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: Pure tin plated.
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN003N02Y3
CYStek Product Specification
