Diodes-Incorporated-2DA1971-7
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2DA1971
400V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89
Features
Mechanical Data
Case: SOT89
BV
CEO
> -400V
I
C
= -0.5A Continuous Collector Current
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.05 grams (Approximate)
I
CM
= 1A Peak Pulse Current
High Gain Holds up h
FE
≥
140 @ I
C
= -100mA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
High Voltage Switching
SOT89
C
E
B
C
B
C
E
Top View
Pin Out
Top View
Device symbol
Ordering Information
(Note 4)
Product
2DA1971-7
2DA1971-13
Marking
1S2
1S2
Reel size (inches)
Tape width (mm)
Quantity per reel
1,000
7
13
12
12
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
1S2 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 1 = 2011)
WW = Week code (01 – 53)
YWW
1S2
Top View
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
2DA1971
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-400
-400
-7
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
Base Current
-0.5
-1
A
A
I
CM
-250
mA
I
B
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.5
Unit
W
Power Dissipation (Note 5)
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
83
°C/W
°C/W
°C
R
θ
JA
R
θ
JL
10.4
-55 to +150
T
J,
T
STG
ESD Ratings
(Note 7)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
V
V
JEDEC Class
3B
C
Notes:
5. For a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
2DA1971
Thermal Characteristics and Derating information
V
CE(sat)
1.5
1.0
0.5
0.0
25mm x 25mm FR4
1oz Cu; single pulse
T
A
=25°C
25mm x 25mm FR4
Limit
1oz Cu
1
DC
100m
10m
1m
1s
100ms
10ms
1ms
100µs
100m
1
10
100
0
20 40 60 80
100 120 140 160
-V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
80
60
40
20
0
25mm x 25mm FR4
1oz Cu
25mm x 25mm FR4
1oz Cu; single pulse
100
10
1
T
A
=25°C
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
2DA1971
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
Collector Cut-off Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
Min
-400
Typ
Max
–
Unit
V
Test Condition
I
C
= -100µA
–
–
–
–
–
–
-400
–
V
I
C
= -1mA
-7
–
–
V
I
E
= -100µA
V
CE
= -320V
V
CB
= -320V
V
EB
= -6V
-100
-100
-100
nA
nA
nA
–
I
CBO
Emitter Cut-off Current
–
I
EBO
I
C
= -20mA, V
CE
= -5V
C
= -100mA, V
CE
= -5V
I
C
= -100mA, I
B
= -10mA
C
= -200mA, I
B
= -40mA
140
140
450
400
Static Forward Current Transfer Ratio (Note 8)
Collector-Emitter saturation Voltage (Note 8)
–
–
–
h
FE
I
-250
-400
-0.9
-0.8
–
mV
V
CE(sat)
I
Base-Emitter saturation Voltage (Note 8)
Base-Emitter Turn-On Current (Note 8)
–
–
-0.75
–
V
V
V
BE(sat)
V
BE(on)
I
C
= -100mA, I
B
= -10mA
I
C
= -200mA, V
CE
= -10V
I
C
= -50mA, V
CE
= -5V,
f = 50MHz
Transition frequency
–
75
–
MHz
f
T
Collector Output Capacitance
Delay Time
–
–
–
–
–
19
89
–
–
–
–
–
pF
ns
ns
ns
ns
C
obo
t
(d)
t
(r)
V
CB
= -10V, I
E
= 0, f = 1MHz
Rise Time
111
2165
185
V
CC
= -200V, I
C
= -100mA,
I
B1
= -10mA, I
B2
= 20mA
Storage Time
Fall Time
t
(s)
t
(f)
Note:
8. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
2DA1971
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
100m
10m
0.5
0.4
0.3
0.2
0.1
0.0
Tamb=25°C
I
C
/I
B
=20
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10
150°C
100°C
I
C
/I
B
=5
25°C
-55°C
1m
10m
100m
1
1m
10m
100m
– I
C
Collector Current (A)
– I
C
Collector Current (A)
V
CE(SAT)
v I
C
V
CE(SAT)
v I
C
1.0
0.8
0.6
0.4
0.2
V
CE
=-5V
150°C
100°C
250
200
150
100
50
-55°C
25°C
25°C
100°C
-55°C
I
C
/I
B
=10
100m
150°C
0
1m
10m
100m
1
1m
10m
– I
C
Collector Current (A)
– I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
0.8
0.6
0.4
0.2
-55°C
25°C
100°C
V
CE
=-5V
150°C
1m
10m
100m
– I
C
Collector Current (A)
V
BE(ON)
v I
C
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
2DA1971
Package Outline Dimensions
D1
C
SOT89
Min
Dim
A
B
B1
C
D
Max
1.60
0.62
0.54
0.44
4.60
1.83
2.60
H
1
1.40
0.44
0.35
0.35
4.40
1.62
2.29
H
E
B1
L
B
D1
E
e
e
1.50 Typ
8° (4X)
H
H1
L
3.94
2.63
0.89
4.25
2.93
1.20
A
All Dimensions in mm
D
Suggested Pad Layout
X1
X2 (2x)
Dimensions Value
(in mm)
X
0.900
1.733
0.416
1.300
4.600
1.475
0.950
1.125
1.500
Y1
Y3
Y
X1
X2
Y
Y1
Y2
Y3
Y4
C
Y4
Y2
C
X (3x)
Note:
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
2DA1971
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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July 2014
© Diodes Incorporated
2DA1971
Document number: DS35669 Rev: 3 – 2
