Diodes-Incorporated-2DB1184Q-13

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Diodes-Incorporated-2DB1184Q-13
2DB1184Q  
50V PNP MEDIUM POWER TRANSISTOR IN TO252  
Features  
Mechanical Data  
•
•
•
BV

CEO

> -50V  

C

= -3A High Continuous Collector Current  
•
•
Case: TO252 (DPAK)  
I
Case Material:
 
Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-  
I

CM

= -4.5A Peak Pulse Current  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Low Collector-Emitter Saturation Voltage  
Ideal for Medium Power Switching or Amplification Applications  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
e3  
STD-202, Method 208  
•
Weight: 0.34 grams (approximate)  
TO252 (DPAK)  
C
B
E
Top View  
Device Schematic  
Pin Out Configuration  
Top view  
Ordering Information
(Note 4)  
Product  
Compliance  
Marking  
Reel Size (inches)  
13  
Tape Width (mm)  
16  
Quantity per Reel  
2,500  
2DB1184Q-13  
AEC-Q101  
2DB1184Q  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. S

more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at

Marking Information  
2DB1184Q = Product Type Marking Code  
= Manufacturers’ code marking  
YYWW = Date Code Marking  
YYWW  
YY = Last Digit of Year, (ex: 14 = 2014)  
WW = Week Code 01-52  
2DB1184Q  
1 of 6  
May 2014  
© Diodes Incorporated  
2DB1184Q  
Document number: DS31504 Rev. 5 – 2  

2DB1184Q  
Absolute Maximum Ratings
 
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
-60  
-50  
-5  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current  
Peak Pulse Collector Current  
-3  
A
-4.5  
A
I

CM  

Thermal Characteristics
 
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
P

D  

Value  
1.2  
Unit  
W
Power Dissipation  
(Note 5)  
(Note 6)  
(Note 5)  
(Note 6)  
15  
W
Power Dissipation @T

L

= +25°C  
P

D  

Thermal Resistance, Junction to Lead  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
104  
°C/W  
°C/W  
°C  
R

θ
JA  

8.3  
R

θ
JL  

-55 to +150  
T

J

, T

STG  

ESD Ratings
(Note 7)  
Characteristic  
Electrostatic Discharge – Human Body Model  
Electrostatic Discharge – Machine Model  
Symbol  
Value  
4000  
400  
Unit  
V
JEDEC Class  
ESD HBM  
ESD MM  
3A  
C
V
Note:  
5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper that is on a single-sided  
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.  
6. Thermal resistance from junction to solder-point (on the exposed collector pad).  
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
Thermal Characteristics  
1
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.9  
D = 0.05  
D = 0.02  
R
(t) = r(t) * R  
θ
JA  
θ
JA  
R
= 110°C/W  
θ
JA  
0.01  
P(pk)  
T
D = 0.01  
t
1
t
2
D = 0.005  
– T
 
= P * R
 
(t)  
J
A
θ
JA  
Duty Cycle, D = t
 
/t  
1
2
D = Single Pulse  
0.001  
0.00001 0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
10,000  
t

1

, PULSE DUR
A
T
ION TIME (s)  
Figure 1 Transient Thermal Response  
2 of 6  
May 2014  
© Diodes Incorporated  
2DB1184Q  
Document number: DS31504 Rev. 5 – 2  

2DB1184Q  
Electrical Characteristics
 
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 8)  
Collector-Base Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
-60  
-50  
-5  
—
—
—
—
—
—
—
—
-1  
-1  
V
V
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

I

C

= -50µA, I

E

= 0  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I

C

= -1mA, I

B

= 0  
I

E

= -50µA, I

C

= 0  
V

CB

= -40V, I

E

= 0  
V

EB

= – 4V, I

C

= 0  
V
—
µA  
µA  
Emitter Cutoff Current  
—
I

EBO  

ON CHARACTERISTICS (Note 8)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Gain  
—
—
—
—
—
-1  
V
V
V

CE(sat)  

V

BE(sat)  

h

FE  

I

C

= -2A, I

B

= -0.2A  
I

C

= -1.5A, I

B

= -0.15A  
V

CE

= -3V, I

C

= -0.5A  
-1.2  
270  
120  
—
SMALL SIGNAL CHARACTERISTICS  
V

CE

= -5V, I

C

= -0.1A,  
f = 30MHz  
Current Gain-Bandwidth Product  
—
110  
—
MHz  
f

T  

Output Capacitance  
Turn-On Time  
Delay Time  
—
—
—
—
—
—
—
26  
109  
60  
—
—
—
—
—
—
—
pF  
ns  
ns  
ns  
ns  
ns  
ns  
C

obo  

t

on  

t

d  

V

CB

= -10V, f = 1MHz  
V

CC

= 30V  
Rise Time  
49  
t

r  

I

CC

= 150mA  
I

B1

= – I

B2

= 15mA  
Turn-Off Time  
Storage Time  
Fall Time  
280  
246  
34  
t

off  

t

s  

t

f  

Note:  
8. Measured
 
under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.  
1,000  
400  
350  
V
= -3V  
CE  
T
= 150°C  
A
800  
I
I
= -5mA  
= -4mA  
B
B
300  
T
= 125°C  
A
250  
200  
150  
T
= 85°C  
600  
400  
200  
0
A
I
I
= -3mA  
= -2mA  
B
B
T
= 25°C  
A
100  
T
= -55°C  
A
I
= -1mA  
B
50  
0
0.001  
0.01  
0.1  
1
10  
0.1  
1
10  
-I

C

, COLLECTOR CURRENT (A)  
-V

CE

, COLLECTOR-EMITTER VOL
T
A
GE (V)  
Figure 3 Typical DC Current Gain vs. Collector Current  
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage  
3 of 6  
May 2014  
© Diodes Incorporated  
2DB1184Q  
Document number: DS31504 Rev. 5 – 2  

2DB1184Q  
0.4  
0.3  
1.2  
1.0  
0.8  
V
= -3V  
CE  
I
/I =
 
10  
B
C
T
= -55°C  
A
0.2  
0.6  
0.4  
T
= 25°C  
= 85°C  
A
T
= 150°C  
A
T
= 125°C  
T
A
A
0.1  
0
T =
 
125°C  
A
T
= 85°C  
A
T
= 150°C  
A
0.2  
0
T
= 25°C  
A
T
= -55°C  
A
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
-I

C

, COLLECTOR CURRENT (A)  
-I

C

, COLLECTOR CURRENT (A)  
Figure 4 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Figure 5 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
1,000  
1.2  
1.0  
f = 1MHz  
I
/I =
 
10  
B
C
T
= -55°C  
0.8  
A
C
ibo  
T
= 25°C  
A
100  
0.6  
0.4  
T
= 85°C  
A
T
A
= 125°C  
T
= 150°C  
A
C
obo  
0.2  
0
10  
10  
1
0.1  
1
10  
100  
0.001  
0.01  
0.1  
1
10  
V

R

, REVERSE VOL
T
A
GE (V)  
Figure 7 Typical Capacitance Characteristics  
-I

C

, COLLECTOR CURRENT (A)  
Figure 6 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
140  
120  
Pw = 100µs (mA)  
V
= -5V  
CE  
f = 30MHz  
Pw = 100ms (mA)  
Pw = 10ms (mA)  
Pw = 1ms (mA)  
100  
80  
DC (mA)  
60  
40  
0.1  
20  
0
T
= 25°C  
A
Single Non-repetitive Pulse  
0.01  
0
10 20 30 40 50 60 70 80 90
 
100  
I

C

, COLLECTOR CURRENT (mA)  
0.1  
1
10  
100  
V

CE

, COLLECTOR-EMITTER VOLTAGE (V)  
Figure 9 Safe Operating Area (Note 3)  
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current  
4 of 6  
May 2014  
© Diodes Incorporated  
2DB1184Q  
Document number: DS31504 Rev. 5 – 2  

2DB1184Q  
Package Outline Dimensions  
E
A
b3  
TO252 (DPAK)  
Dim Min Max Typ  
7°
±
1
°  
c2  
L3  
A
2.19 2.39 2.29  
A1
0.00 0.13 0.08  
A2
0.97 1.17 1.07  
D
A2  
b
0.64 0.88
 
0.783  
H
L4  
b2
0.76 1.14 0.95  
b3
5.21 5.46 5.33  
c2
0.45 0.58
 
0.531  
D
6.00 6.20 6.10  
e
b
3x  
D1
5.21  
e
–
–
–
b2 2x  
–
2.286  
E
6.45 6.70 6.58  
E1
4.32  
–
–
G
a
uge
P
l ane  
H
L
9.40 10.41 9.91  
1.40 1.78 1.59  
D1  
S
e
a
t
i ng
P
l ane  
E1  
L
L3
0.88 1.27 1.08  
L4
0.64 1.02 0.83  
2.
7
4 REF  
a
0°  
10°  
–
All Dimensions in mm  
Suggested Pad Layout  
X1  
Dimensions Value
 
(in mm)  
Y1  
C
X
4.572  
1.060  
5.632  
2.600  
5.700  
10.700  
Y2  
X1  
Y
C
Y1  
Y2  
Y
X
5 of 6  
May 2014  
© Diodes Incorporated  
2DB1184Q  
Document number: DS31504 Rev. 5 – 2  

2DB1184Q  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference.
 
Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2014, Diodes Incorporated  
6 of 6  
May 2014  
© Diodes Incorporated  
2DB1184Q  
Document number: DS31504 Rev. 5 – 2