Diodes-Incorporated-2DB1386R-13

2DB1386Q/R  

20V PNP MEDIUM POWER TRANSISTOR IN SOT89  

Features  

Mechanical Data  















BV

CEO

> -20V  





Case: SOT89  

I

C

= -5A High Continuous Current  

Case Material: Molded Plastic, “Green” Molding Compound.  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish – Matte Tin Plated Leads, Solderable per  

MIL-STD-202, Method 208  

Low Saturation Voltage V

CE(sat)

< -1V @ -4A  

Complementary NPN Type: 2DD2098  





Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

For automotive applications requiring specific change  

control (i.e. parts qualified to AEC-Q100/101/200, PPAP  

capable, and manufactured in IATF 16949 certified facilities),  

please

or your local Diodes representative.  



Weight: 0.052 grams (Approximate)  

SOT89  

C

E

E

C

B

C

B

Device Symbol  

Top View  

Pin Out

–

Top View  

Ordering Information

(Note 4)  

Part Number  

2DB1386Q-13  

2DB1386Q-13R  

2DB1386R-13  

2DB1386RTC  

Compliance  

Marking  

Reel Size (inches)  

Tape Width (mm)  

Quantity per Reel  

2,500  

Standard  

Standard  

Standard  

Standard  

KP3Q  

KP3Q  

KP3R  

KP3R  

13  

13  

13  

13  

12  

12  

12  

12  

4,000  

2,500  

4,000  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

free/ for more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-free “Gre

en” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website a

Marking Information  

= Manufacturer’s Marking  

KP3x = Product Type Marking Code,  

YWW  

KP3x  

where:  

KP3Q = 2DB1386Q  

KP3R = 2DB1386R  

YWW = Date Code Marking  

Y = Last Digit of Year (ex: 0 = 2020)  

WW = Week Code (01 to 53)  

1 of 6  

December 2020  

© Diodes Incorporated  

2DB1386Q/R  

Document number: DS31147 Rev. 8 – 2  

2DB1386Q/R  

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-30  

-20  

-6  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Continuous Collector Current  

Peak Pulse Collector Current (Single Pulse)  

Base Current  

-5  

A

-10  

-500  

A

I

CM  

mA  

I

B  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

Value  

1

125  

Unit  

W

Power Dissipation (Note 5)  

P

D  

R



JA  

Thermal Resistance, Junction to Ambient Air (Note 5)  

Thermal Resistance, Junction to Leads (Note 6)  

Operating and Storage Temperature Range  

°C/W  

°C/W  

°C  

19  

R

θJL  

-55 to +150  

T

J

, T

STG  

Notes:  

5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is  

measured when operating in steady state condition.  

6. Thermal resistance from junction to solder-point (on the exposed collector pad).  

Thermal Characteristics and Derating Information  

120  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

100  

80  

60  

40  

20  

0

D=0.5  

D=0.2  

Single Pulse  

D=0.05  

D=0.1  

0

25  

50  

75  

100 125 150  

100μ

1m 10m

 

100m  

100



 

1

10  

100  

1k  

Temperature (

o

C)  

Pulse Width (s)  

Transient Thermal Impedance  

Derating Curve  

100  

10  

1

Single Pulse. T

amb

=25

o

C  

100μ

1m 10m

 

100m  

100

  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Power Dissipation  

2 of 6  

December 2020  

© Diodes Incorporated  

2DB1386Q/R  

Document number: DS31147 Rev. 8 – 2  

2DB1386Q/R  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 7)  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Collector Cut-Off Current  

Symbol  

Min  

Typ  

Max  

Unit  

Conditions  

-30  

-20  

-6  

V

V









  







BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

I

C

= -50µA, I

E

= 0  

I

C

= -1mA, I

B

= 0  

I

E

= -50µA, I

C

= 0  

V

CB

= -20V, I

E

= 0  

V

EB

= -5V, I

C

= 0  

V

-0.5  



  



A  



A  

Emitter Cut-Off Current  

-0.5  

I

EBO  

ON CHARACTERISTICS (Note 7)  

Collector-Emitter Saturation Voltage  

-0.25  



  

-1.0  

270  

390  

V

V

CE(sat)  

h

FE  



120  

180  

I

C

= -4A, I

B

= -0.1A  

2DB1386Q  

2DB1386R  

DC Current Gain  



I

C

= -0.5A, V

CE

= -2V  

SMALL SIGNAL CHARACTERISTICS  

Output Capacitance  

55  

pF  





C

obo  

f

T  

V

CB

= -20V, I

E

= 0, f = 1MHz  

V

CE

= -6V, I

E

= 50mA,  

f = 30MHz  

Current Gain-Bandwidth Product  

100  

MHz  

  

  

Note:  

7. Measured under pulsed conditions.

 

Pulse width

≤

300µs. Duty

 

cycle

≤

2%.  

Typical Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0

400  

350  

V

= -2V  

CE  

T

= 150  

癈

T

A

= 150°C  

A

I

= -10mA  

= -8mA  

B

300  

250  

T

= 85  

癈

T

A

= 85°C  

I

A

B

I

= -6mA  

T

= 25

癈  

B

I

200

T

A

= 25°C  

A

150  

= -4mA  

B

100  

50  

0

T

= -55  

癈

T

A

= -55°C  

A

I

= -2mA  

B

0.001  

0.01  

-I

C

, COLLECTOR CURRENT (A)  

Figure 1

 

ypic

rr t

 

G

rent Gain  

vs. Collector Current (2DB1386Q)  

0.1  

1

10  

-V

CE

, COLLECTOR EMITTER VOLTAGE (V)  

Figure 2

 

Typical Collector Current  

Collector Current vs. Collector-Emitter Voltage  

D

T

C C

u

al

e

D

n

C

i

r

n  

h

FE V  

3 of 6  

December 2020  

© Diodes Incorporated  

2DB1386Q/R  

Document number: DS31147 Rev. 8 – 2  

2DB1386Q/R  

Typical Electrical Characteristics

(Continued)  

1.2  

1.0  

0.4  

V

= -2V  

CE  

I

/I =

 

40  

B

C

0.3  

0.2  

0.8  

0.6  

0.4  

T

= -55  

癈

T

A

= -55°C  

A

T

= 25

癈  

A

T

A

= 25°C  

T

= 150  

癈

T

A

= 150°C  

A

T

= 85  

癈

T

= 85  

癈

T

A  

A

= 85°C  

T

A

= 85°C  

A

0.1  

0

0.2  

0

T

= 25  

癈

T

A  

A

= 25°C  

T

= 150  

癈

T

A

A

= 150°C  

T

= -55  

癈

T

A  

A

= -55°C  

0.0001 0.001  

0.01  

0.1  

1

10  

0.0001 0.001  

0.01  

0.1  

1

10  

I ,

 

COLLECTOR CURRENT (A)  

–

C

I

C

, COLLECTOR CURRENT (A)  

-I

C

, COLLECTOR CURRENT (A)  

Figure 3

 

Typical Collector-Emitter Saturation Voltage  

Figure 4

 

Typical Base-Emitter Turn-On Voltage  

V

I

C  

BE(on) V  

V

I

C  

CE(sat) V  

vs. Collector Current  

vs. Collector Current  

1,000  

100  

10  

1.2  

1.0  

0.8  

0.6  

0.4  

T

= -55  

癈

T

A

A

= -55°C  

T

= 25

癈  

T

A

A

= 25°C  

T

= 85

癈  

T

A

A

= 85°C  

T

= 150

癈  

0.2  

0

A

T

A

= 150°C  

I

/I =

 

40  

B

C

0.0001  

0.001  

0.01  

0.1  

1

10  

-I

C

, COLLECTOR CURRENT (A)  

vs. Collector Current  

I

C

, COLLECTOR CURRENT (A)  

V ,

 

REVERSE VOLTAGE (V)  

-V

CB

, COLLECTOR-BASE VOLTAGE (V)  

R

Output Capacitance Characteristics  

Figure 6

 

Typical Output Capacitance Characteristics  

C

OBO

v V

CB  

120  

100  

80  

60  

40  

V

= -6V  

CE  

20  

0

f = 30MHz  

0

20  

40  

60  

80  

100  

120  

-I

C

, COLLECTOR CURRENT

(mA)  

Figure 7

 

Typical Gain-Bandwidth Product  

f

I

C  

T V  

vs. Collector Current  

4 of 6  

December 2020  

© Diodes Incorporated  

2DB1386Q/R  

Document number: DS31147 Rev. 8 – 2  

2DB1386Q/R  

Package Outline Dimensions  

SOT89  

D1  

c

H

SOT89  

Dim Min Max  

E

Typ  

1.50

  

0.56  

0.48  

0.38  

4.50  

A

B

1.40



1.60  

0.50 0.62  

B1

0.42 0.54  

c

D

B1  

L

0.35 0.43  

4.40 4.60  

B

e

D1

1.62 1.83

 

1.733  

D2  

D2

1.61 1.81  

2.40 2.60  

E2

2.05 2.35  

1.71  

2.50  

2.20  

1.50  

4.10  

2.78  

1.05  

TOP VIEW  

E

8

°

(4  

X)  

e

H

–

–

3.95 4.25  

H1  

E2  

H1

2.63 2.93  

0.90 1.20  

A

L

L1

0.327 0.527

 

0.427  

0.20 0.40

 

0.30  

All Dimensions in mm  

L1  

z

D

z

BOTTOM VIEW  

Suggested Pad Layout  

SOT89  

X2  

Value  

Dimensions  

(in mm)  

1.500  

0.244  

0.580  

0.760  

1.933  

1.730  

3.030  

1.500  

0.770  

4.530  

C

G

X

X1  

X2  

Y

Y1  

Y2  

Y3  

Y4  

Y3  

Y1  

Y4  

X

G

Y

Y2  

C

X1  

5 of 6  

December 2020  

© Diodes Incorporated  

2DB1386Q/R  

Document number: DS31147 Rev. 8 – 2  

2DB1386Q/R  

IMPORTANT NOTICE  

DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH  

1.  

REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF  

MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY  

RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

2.  

The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products  

described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product  

described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes products.  

Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting  

the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended applications, (c) ensuring  

their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well as safety and functional-  

safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques,  

redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.  

3.  

Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from  

time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and  

will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages

and liabilities.  

4.  

Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications.  

Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark  

applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties  

whose products and services may be described in this document or on Diodes’ webs

ite) under this document.  

5.  

Diodes  

products  

are  

provided  

subject  

to  

Diodes’  

Standard  

Terms  

and  

Conditions  

of  

Sale  

or other applicable terms. This document does not  

alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products  

purchased through unauthorized sales channel.  

6.  

Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is  

prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or  

regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or  

penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless  

against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with  

the applicable laws and regulations, as well as any unintended or unauthorized application.  

7.  

While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain  

technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and  

Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make  

modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final  

and determinative format released by Diodes.  

8.  

Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is  

prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized  

use.  

Copyright © 2020 Diodes Incorporated  

6 of 6  

December 2020  

© Diodes Incorporated  

2DB1386Q/R  

Document number: DS31147 Rev. 8 – 2