Diodes-Incorporated-2DD1664Q-13

2DD1664P/Q/R  

32V NPN SURFACE MOUNT TRANSISTOR IN SOT89  

Features  

Mechanical Data  





Case: SOT89  



















BV

CEO

> 32V  

Maximum Continuous Current I

C

= 1A  

Epitaxial Planar Die Construction  

Complementary PNP Type Available (2DB1132)  

Ideally Suited for Automated Assembly Processes  

Ideal for Medium Power Switching or Amplification Applications  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Qualified to AEC-Q101 Standards for High Reliability  

Case Material: M

olded Plastic. “Green” M

olding Compound.  

UL Flammability Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Matte Tin Finish  







Weight: 0.055 grams (Approximate)  

SOT89  

C

E

B

Top View  

Device Symbol  

Pin Out

–

Top View  

Ordering Information

(Note 4)  

Part Number  

2DD1664P-13  

2DD1664Q-13  

2DD1664R-13  

Marking  

Reel Size (inches)  

Tape Width (mm)  

Quantity per Reel  

2,500  

N13P  

N13Q  

N13R  

13  

13  

13  

12  

12  

12  

2,500  

2,500  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3. Halogen- and Antimony-

free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  

<1000ppm antimony compounds.  

4. For packaging details, go to our website at

Marking Information  

= Manufacturer’s Marking  

N13x = Product Type Marking Code:  

YWW  

N13x  

Where  

N13P = 2DD1664P  

N13Q = 2DD1664Q  

N13R = 2DD1664R  

YWW = Date Code Marking  

Y = Last Digit of Year (ex: 9 = 2019)  

WW = Week Code (01 to 53)  

1 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2  

2DD1664P/Q/R  

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

40  

32  

6

V

V

Continuous Collector Current  

Peak Pulse Current (Note 6)  

1

A

2

A

I

CM  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

Value  

Unit  

(Note 5)  

1

Power Dissipation  

(Note 6)  

(Note 7)  

(Note 5)  

(Note 6)  

(Note 7)  

(Note 5)  

1.5  

2.0  

125  

83  

W

P

D  

Thermal Resistance, Junction to Ambient Air  

°C/W



 

R

θ

JA  

60  

Thermal Resistance, Junction to Case  

Thermal Resistance, Junction to Lead  

Operating and Storage Temperature Range  

18  

R

θ

JC  

R

θ

JL  



C/W  

°C/W

  

°C  

(Note 8)  

22  

-55 to +150  

T

J,

T

STG  

ESD Ratings

(Note 9)  

Characteristic  

Electrostatic Discharge – Human Body Model  

Electrostatic Discharge – Machine Model  

Symbol  

Value  

Unit  

V

JEDEC Class  

ESD HBM  

ESD MM  

4,000  

400  

3A  

C

V

Notes:  

5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured  

under still air conditions whilst operating in a steady-state.  

6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.  

7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.  

8. Thermal resistance from junction to solder-point (on the exposed collector pad).  

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  

2 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2  

2DD1664P/Q/R  

Thermal Characteristics and Derating Information  

140.0  

3

2

1

0

T

A

=25

O

C  

2oz copper  

1oz copper  

120.0  

100.0  

80.0  

1oz copper  

60.0  

40.0  

T

A

=25

O

C  

500  

2oz copper  

2000  

0

500  

1000  

1500  

2500  

0

1000  

1500  

2000  

2500  

Copper Area (sqmm)  

Copper Area (sqmm)  

120  

100  

80  

60  

40  

20  

0

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

D=0.5  

Single Pulse  

D=0.2  

D=0.05  

D=0.1  

0

25  

50  

75  

100 125 150  

1

00μ

1m 10m

 

100m  

1

10  

100  

1k  

100



 

Temperature (

O

C)  

Pulse Width (s)  

Transient Thermal Impedance  

Derating Curve  

100  

10  

1

Single Pulse. T

A

=25

O

C  

100μ

1m 10m

 

100m  

100

  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Power Dissipation  

3 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2  

2DD1664P/Q/R  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage (Note 10)  

Emitter-Base Breakdown Voltage  

Collector-Emitter Cut-Off Current  

Collector-Base Cut-Off Current  

Symbol  

BV

CBO  

BV

CEO  

BV

EBO  

I

CES  

Min  

40  

32  

6

Typ  

—

Max  

—

Unit  

V

Test Condition  

I

C

= 100µA  

—

—

V

I

C

= 10mA  

I

E

= 100µA  

V

CE

= 32V  

V

CB

= 36V  

V

EB

= 6V  

—

—

V

—

—

—

—

100  

100  

100  

180  

270  

390  

400  

—

nA  

nA  

nA  

—

I

CBO  

Base-Emitter Cut-Off Current  

—

I

EBO  

2DD1664P  

Static Forward Current Transfer  

2DD1664Q  

82  

120  

180  

—

—

—

h

FE  

I

C

= 100mA, V

CE

= 3V  

Ratio (Note 10)  

2DD1664R  

Collector-Emitter Saturation Voltage (Note 10)  

Transition Frequency  

120  

280  

10  

mV  

MHz  

pF  

V

CE(SAT)  

f

T  

I

C

= 500mA, I

B

= 50mA  

—

I

E

= 50mA, V

CE

= 5V, f = 30MHz  

I

E

= 0A, V

CB

= 10V, f = 1MHz  

Output Capacitance  

—

—

C

ob  

Note:  

10

. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%

.  

Typical Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

1.8  

V

= 3V  

400  

CE  

1.6  

1.4  

T

T

= 150°C  

A

300  

200  

1.2  

1.0  

0.8  

0.6  

0.4  

= 85°C  

= 25°C  

A

T

A

A

T

= -55°C  

100  

0

0.2  

0

0.001  

0.01  

Figure 2.  

0.1  

1

10  

Figure 1.  

4 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2  

2DD1664P/Q/R  

Typical Electrical Characteristics

(continued) (@T

A

= +25°C, unless otherwise specified.)  

I

/I =

 

10  

B

C

T

T

= -55°C  

A

= 25°C  

= 85°C  

A

T

= 150°C  

A

T

A

T

= 25°C  

A

T

= 85°C  

V

= 3V  

A

CE  

T

= 150°C  

A

T

= -55°C  

A

Figure 3.  

Figure 4.  

40  

30  

T

= -55°C  

A

20  

T

= 25°C  

= 85°C  

A

T

A

10  

0

I

/I =

 

10  

B

T

= 150°C  

C

A

Figure 6.  

Figure 5.  

V

= 5V  

CE  

f = 100MHz  

-I

E

, EMITTER CURRENT  

(mA)  

Figure 8.

 

Typical Gain-Bandwidth Product vs. Emitter Current  

Figure 7.  

5 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2  

2DD1664P/Q/R  

Package Outline Dimensions  

Please see

r the latest version.  

SOT89  

D1  

c

SOT89  

Dim Min Max  

Typ  

1.50

  

0.56  

0.48  

0.38  

4.50  

A

B

1.40



1.60  

0.50 0.62  

H

E

B1

0.42 0.54  

c

D

0.35 0.43  

4.40 4.60  

D1

1.62 1.83

 

1.733  

D2

1.61 1.81  

2.40 2.60  

E2

2.05 2.35  

1.71  

2.50  

2.20  

1.50  

4.10  

2.78  

1.05  

B1  

L

E

B

e

e

–

–

D2  

H

3.95 4.25  

H1

2.63 2.93  

0.90 1.20  

L

8

°

(

4X)  

L1

0.327 0.527

 

0.427  

0.20 0.40

 

0.30  

z

H1  

All Dimensions in mm  

E2  

A

L1  

D

z

Suggested Pad Layout  

Please see

r the latest version.  

SOT89  

X2  

Value  

Dimensions  

(in mm)  

Y3  

Y1  

C

G

X

X1  

X2  

Y

Y1  

Y2  

Y3  

Y4  

1.500  

0.244  

0.580  

0.760  

1.933  

1.730  

3.030  

1.500  

0.770  

4.530  

Y4  

X

G

Y

Y2  

C

X1  

6 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2  

2DD1664P/Q/R  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2019, Diodes Incorporated  

7 of 7  

September 2019  

© Diodes Incorporated  

2DD1664P/Q/R  

Document number: DS31143 Rev. 6 – 2