Diodes-Incorporated-2N7002AQ-7
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2N7002AQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
I
D
max
T
A
= +25°C
200mA
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
V
(BR)DSS
R
DS(ON)
max
6
Ω
@ V
GS
= 5V
Low Gate Threshold Voltage
60V
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Description
ESD Protected Gate, 1.2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making
it ideal for high efficiency power management applications.
Applications
•
•
Motor Control
Mechanical Data
Power Management Functions
•
•
Case: SOT23
Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
•
•
•
•
Drain
SOT23
D
Gate
S
G
ESD PROTECTED TO 1.2kV
Gate
Protection
Diode
Top View
Pin-Out
Source
Top View
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
2N7002AQ
-7
2N7002AQ
-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
Marking Information
SOT23
MN1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
MN1
M = Month (ex: 9 = September)
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
Code
V
W
X
Y
Z
A
B
C
D
E
F
G
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2015
© Diodes Incorporated
2N7002AQ
Document number: DS37722 Rev. 1 – 2
2N7002AQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C
Steady
180
130
115
T
A
= +85°C
mA
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Continuous Drain Current (Note 7) V
GS
= 10V
I
D
State
T
A
= +100°C
T
A
= +25°C
220
160
140
Steady
State
T
A
= +85°C
I
D
T
A
= +100°C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
0.5
A
I
S
800
mA
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
370
540
348
241
91
Units
(Note 6)
Total Power Dissipation
(Note 7)
mW
P
D
(Note 6)
Thermal Resistance, Junction to Ambient
(Note 7)
R
θ
JA
°C/W
°C
(Note 7)
Thermal Resistance, Junction to Case
R
θ
JC
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
⎯
⎯
70
⎯
⎯
V
BV
DSS
I
DSS
⎯
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
1.0
500
Zero Gate Voltage Drain Current
@ T
C
= +25°C
@ T
C
= +125°C
µA
µA
Gate-Body Leakage
±10
I
GSS
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
1.2
⎯
2.0
V
Ω
V
GS(th)
R
DS(ON)
g
FS
⎯
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 0.115A
V
GS
= 10V, I
D
= 0.115A
V
DS
= 10V, I
D
= 0.115A
3.5
3.0
6
5
Static Drain-Source On-Resistance
@ T
J
= +25°C
@ T
J
= +125°C
Forward Transconductance
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
80
mS
⎯
⎯
23
3.4
1.4
260
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
G
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.115A, R
L
= 150
Ω
,
Reverse Transfer Capacitance
Gate Resistance
⎯
400
SWITCHING CHARACTERISTICS
(Note 9)
Turn-On Delay Time
10
33
ns
ns
t
D(ON)
⎯
⎯
⎯
⎯
V
GEN
= 10V
,
R
GEN
= 25
Ω
Turn-Off Delay Time
t
D(OFF)
Notes:
6. Device mounted on FR-4 PCB, with minimum recommended pad layout.
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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January 2015
© Diodes Incorporated
2N7002AQ
Document number: DS37722 Rev. 1 – 2
2N7002AQ
0.6
0.5
1
V
= 5V
DS
Pulsed
0.4
0.3
0.1
0.2
0.1
0
T
= 150°C
A
T
= 25°C
T
= 85°C
A
A
T
= -55°C
A
0.01
1
2
3
4
5
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
2.5
2.0
9
8
7
6
1.5
5
4
1.0
0.5
0
V
= 5V
GS
V
3
2
1
= 10V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3
On-Resistance vs.
Drain Current & Gate Voltage
2.0
1.9
100
I
= 250µA
1.8
D
1.7
1.6
1.5
1.4
C
iss
10
1.3
1.2
C
oss
1.1
1.0
C
rss
1
0
5
10
15
20
25
30
35 40
-50 -25
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient
T
emperature
0
25
50
75 100
125 150
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Fig. 6
Typical
T
o
tal Capacitance
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January 2015
© Diodes Incorporated
2N7002AQ
Document number: DS37722 Rev. 1 – 2
2N7002AQ
1
0.1
T
= 150°C
A
T
= 125°C
A
T
= 85°C
0.01
A
T
= 25°C
0.001
A
T
= -55°C
A
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
, SOURCE-DRAIN VOLTAGE (V)
1
Fig. 7
Reverse Drain Current vs. Source-Drain Voltage
Package Outline Dimensions
A
ll
7
°
H
G
A
U
G
E P
L
A
N
E
SOT23
0.
2
5
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
J
K
K1
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.40
1.30
2.40
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
G
F
All Dimensions in mm
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
X
E
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January 2015
© Diodes Incorporated
2N7002AQ
Document number: DS37722 Rev. 1 – 2
2N7002AQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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January 2015
© Diodes Incorporated
2N7002AQ
Document number: DS37722 Rev. 1 – 2
