Diodes-Incorporated-2N7002E-7-F
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2N7002E
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
V
(BR)DSS
R
DS(ON)
max
3
Ω
@ V
GS
= 10V
T
A
= +25°C
Low Gate Threshold Voltage
Low Input Capacitance
60V
300mA
Fast Switching Speed
Small Surface Mount Package
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT23
Motor Control
Power Management Functions
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
e3
Drain
SOT23
D
Gate
S
G
Source
Top View
Top View
Pin Out Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
2N7002E-7-F
2N7002E-13-F
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
K7B = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
K7B
K7B
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or
= Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
Date Code Key
Year
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
P
R
S
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
2N7002E
Document number: DS30376 Rev. 14 – 2
2N7002E
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
60
Units
V
V
60
Drain-Gate Voltage R
GS
1.0M
V
DGR
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
V
GSS
I
D
Steady
State
250
200
T
A
= +25°C
mA
mA
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +70°C
T
A
= +25°C
A
= +70°C
Steady
State
300
240
I
D
T
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
500
800
mA
mA
I
S
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
370
540
348
241
91
Units
(Note 5)
Total Power Dissipation
(Note 6)
mW
P
D
(Note 5)
Thermal Resistance, Junction to Ambient
(Note 6)
R
θ
JA
°C/W
°C
(Note 6)
Thermal Resistance, Junction to Case
R
θ
JC
Operating and Storage Temperature Range
-55 to 150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
70
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
1.0
500
Zero Gate Voltage Drain Current
@ T
C
= +25°C
@ T
C
= +125°C
µA
nA
Gate-Body Leakage
±10
I
GSS
V
GS
= ±15V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
2.5
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
1.6
2.0
3
4
Static Drain-Source On-Resistance
@ T
J
= +25°C
ꢀ
R
DS (ON)
On-State Drain Current
0.8
80
1.0
A
I
D(ON)
g
FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
mS
22
11
50
25
5.0
pF
pF
pF
ꢀ
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
2.0
120
223
82
Gate resistance
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
pC
pC
pC
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
g
V
DS
= 10V, I
= 250mA
D
Q
gs
Q
gd
178
SWITCHING CHARACTERISTICS
(Note 8)
Turn-On Delay Time
7.0
11
20
20
ns
ns
t
D(ON)
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
ꢀ
, V
GEN
= 10V, R
GEN
= 25
ꢀ
Turn-Off Delay Time
t
D(OFF)
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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2N7002E
Document number: DS30376 Rev. 14 – 2
2N7002E
1.0
0.8
2.0
1.6
T
A
= -55°C
T
A
= 25°C
0.6
0.4
0.2
0
1.2
T
A
= 125°C
0.8
0.4
0
3
4
5
0
1
2
6
7
1.0
200
0
1
2
4
5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2
Drain Current vs. Gate-Source Voltage
Fig. 1
On-Region Characteristics
5
4
5
4
3
V
GS
= 4.5V
3
I
D
= 250mA
2
1
2
1
0
I
D
= 75mA
V
GS
= 10V
0
0
0.2
I
D
, DRAIN CURRENT (A)
Fig. 4
On Resistance vs. Drain Current
0.6
0.8
0
0.4
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 3
On Resistance vs. Gate-Source Voltage
5
4
350
300
250
V
GS
= 4.5V @ 200mA
3
2
200
150
100
V
GS
= 10V @ 250mA
1
0
50
0
0
175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 Max Power Dissipation vs. Ambient
T
e
mperature
-50
25
50
150
-75
50 75
T
J
, JUNCTION TEMPER
A
T
URE (°C)
Fig. 5
On-Resistance vs. Junction
T
emperature
150
100 125
-25
0
25
100 125
75
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© Diodes Incorporated
2N7002E
Document number: DS30376 Rev. 14 – 2
2N7002E
Package Outline Dimensions
A
SOT23
Dim
A
B
C
D
F
G
H
J
K
K1
L
M
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
–
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
–
H
G
M
K
J
K1
D
–
F
L
0.45
0.085 0.18
0° 8°
0.61
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
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August 2013
© Diodes Incorporated
2N7002E
Document number: DS30376 Rev. 14 – 2
2N7002E
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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August 2013
© Diodes Incorporated
2N7002E
Document number: DS30376 Rev. 14 – 2
