Diodes-Incorporated-2N7002H-7
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2N7002H
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
N-Channel MOSFET
I
D
max
V
(BR)DSS
R
DS(ON)
max
7.5
Ω @ V
GS
= 5V
T
A
= +25°C
Low On-Resistance
Low Gate Threshold Voltage
60V
210mA
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case: SOT23
Case Material: Molded Plas
tic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Motor Control
Power Management Functions
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
S
G
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
2N7002H-7
2N7002H-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green”
products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
H7H = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
H7H
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
Code
B
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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July 2015
© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 – 2
2N7002H
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
60
V
V
DSS
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
V
GSS
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
170
120
105
Steady
State
mA
Continuous Drain Current (Note 5) V
GS
= 10V
I
D
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
Continuous
Pulsed
210
150
135
Steady
State
mA
Continuous Drain Current (Note 6) V
GS
= 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
D
0.5
2
500
A
I
S
mA
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
370
510
Units
(Note 5)
Total Power Dissipation
(Note 6)
mW
(Note 5)
(Note 6)
341
249
-55 to +150
Thermal Resistance, Junction to Ambient
°C/W
°C
R
JA
Operating and Storage Temperature Range
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
60
V
1.0
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
2.0
3.0
7.5
1.5
V
Ω
V
3.0
V
GS(th)
R
DS (ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 0V, I
S
= 115mA
Static Drain-Source On-Resistance
Diode Forward Voltage
0.78
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
26
2.8
2.1
352
203
123
3.7
2.9
8.4
4.7
9.3
3.5
pF
pF
pF
C
iss
C
oss
C
rss
Q
g
–
–
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
pC
Q
gs
Q
gd
t
D(on)
t
r
V
DS
= 10V, I
D
= 250mA
Gate-Drain Charge
Turn-On Delay Time
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
Ω
, V
GEN
= 10V,
R
GEN
= 25
Ω
Turn-On Rise Time
ns
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
rr
I
S
= 0.5A, dI/dt = 100A/
μ
s
I
S
= 0.5A, dI/dt = 100A/
μ
s
–
–
nC
Q
rr
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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July 2015
© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 – 2
2N7002H
1.0
0.9
0.8
0.7
0.6
0.5
0.5
0.4
0.3
0.2
0.1
V
= 10V
GS
V
= 5
.
0
V
V
= 8
.
0
V
DS
GS
V
= 6
.
0
V
GS
V
= 5
.
0
V
GS
0.4
0.3
0.2
0.1
0.0
T
= 150
C
A
V
= 4
.
5
V
GS
T
= 85
C
A
T
= 125
C
A
T
= 25
C
A
V
= 4
.
0
V
GS
V
= 3
.
5
V
GS
T
= -5
5
C
A
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
10
10
9
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
V
= 5
.
0
V
GS
I
= 50mA
D
0
2
4
6
8
10 12 14 16 18 20
0
0.1
0.2
0.3
0.4
0.5
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
5
4
3
2
1
0
2.5
2
V
= 5V
GS
V
G
S
= 1
0
V
I
=
1
0
0
m
A
D
T
= 150
C
= 125
C
A
1.5
1
T
A
T
T
= 85
C
A
A
V
G
S
= 5V
I
D
= 50mA
= 25
C
T
= -55
C
A
0.5
0
0
0.1
0.2
0.3
0.4
–
5
0
–
2
5
0
25
50
75 100 125 150
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Drain Current and
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
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© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 – 2
2N7002H
5
4
3
2
1
0
5
4
3
2
1
0
I
= 250µA
D
V
I
= 5V
GS
= 50mA
D
I
= 1mA
D
V
I
= 10V
GS
= 100mA
D
–
5
0
–
2
5
0
25
50
75 100
125 150
–
5
0
–
2
5
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
0.5
0.4
0.3
0.2
0.1
0
100
f = 1MHz
C
iss
T
A
= 85°C
T
A
= 150°C
10
T
A
= 25
C
C
o
s
s
T
A
= 125
C
T
A
= -55
C
C
r
s
s
1
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10
T
y
pical Junction Capacitance
10
10
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
W
8
6
4
2
0
1
0.1
V
= 10V
DS
I
= 250mA
D
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
T
J
(max)
= 150°C
T
A
= 25°C
W
0.01
0.001
P
= 10ms
W
P
= 1ms
V
GS
= 10V
Single Pul
s
e
W
DUT on 1 * MRP Board
0
0.1
0.2
0.3 0.4 0.5
0.6 0.7 0.8
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
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July 2015
© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 – 2
2N7002H
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
JA
(t) = r(t) * R
JA
R
JA
= 346°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 15
Transient Thermal Resistance
Package Outline Dimensions
All 7°
H
SOT23
Min Max
GAUGE PLANE
Dim
A
B
C
D
F
G
H
J
Typ
0.25
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
0.40
1.30
2.40
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
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July 2015
© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 – 2
2N7002H
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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July 2015
© Diodes Incorporated
2N7002H
Document number: DS38025 Rev. 1 – 2
