Diodes-Incorporated-AC857CQ-7

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Diodes-Incorporated-AC857CQ-7
AC857BQ-AC857CQ  
PNP SMALL SIGNAL TRANSISTOR IN SOT23  
Description  
Mechanical Data  
Case: SOT23  
The AC857BQ-AC857CQ Bipolar Junction Transistors (BJT) are  
designed to meet the stringent requirements of Automotive  
Applications.  
Case Material: Molded Plastic
, ―Green‖
Molding Compound  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish
–
Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
Features  
Weight: 0.008 grams (Approximate)  
Ideally Suited for Automatic Insertion  
Complementary NPN Types: AC847BQ-AC847CQ  
For Switching and AF Amplifier Applications  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
C
SOT23  
C
E
B
B
E
Top View  
Device Symbol  
Top View  
Pin-Out  
Ordering Information
(Notes 4 & 5)  
Product  
Compliance  
Marking  
Reel Size (inches)  
Quantity per Reel  
AC857BQ-7  
AC857CQ-7  
Automotive  
Automotive  
2C6  
2C7  
7
7
3,000  
3,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  

2. See http://www.diodes.com/quality/lead_free.html

for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<
1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to

Marking Information  
SOT23  
XXX = Product Type Marking Code  
YM = Date Code Marking  
Y or Y = Year (ex: E = 2017)  
XXX  
M or M = Month (ex: 9 = September)  
Date Code Key  
Year  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
Code  
D
E
F
G
H
I
J
K
Aug  
Sep  
Oct  
Nov  
Dec  
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
8
9
O
N
D
1
2
3
4
5
6
7
1 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

AC857BQ-AC857CQ  
Absolute Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
-50  
-45  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-5.0  
-100  
-200  
-200  
-200  
V
Continuous Collector Current  
Peak Collector Current  
Peak Emitter Current  
Peak Base Current  
mA  
mA  
mA  
mA  
I

CM  

I

EM  

I

BM  

Thermal Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
310  
350  
403  
357  
Unit  
(Note 6)  
(Note 7)  
(Note 6)  
(Note 7)  
(Note 8)  
Power Dissipation  
mW  
P

D  

Thermal Resistance, Junction to Ambient  
°C/W
 
R

θ
JA  

Thermal Resistance, Junction to Leads  
350  
°C/W
  
R

θ
JL  

Operating and Storage Temperature Range  
-65 to +150  
°C  
T

J,

T

STG  

ESD Ratings
(Note 9)  
Characteristic  
Electrostatic Discharge – Human Body Model  
Electrostatic Discharge – Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
400  
Unit  
V
V
JEDEC Class  
3A  
C
Notes:  
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air  
conditions whilst operating in a steady-state.  
7. Same as Note 6, except the device is mounted on 15mm x 15mm 1oz copper.  
8. Thermal resistance from junction to solder-point (at the end of the leads).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

AC857BQ-AC857CQ  
Thermal Characteristics and Derating Information  
0.4  
0.3  
0.2  
0.1  
0.0  
400  
350  
300  
250  
200  
150  
100  
50  
D=0.5  
D=0.2  
D=0.1  
Single Pulse  
D=0.05  
0
0
25  
50  
75  
100 125 150  
1
1m 10m
 
100m  
1
10  
100  
1k  
100µ  
Temperature (

o

C)  
Pulse Width (s)  
Transient Thermal Impedance  
Derating Curve  
10  
Single Pulse. T

A

=25

o

C  
1
0.1  
10m  
100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Power Dissipation  
3 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

AC857BQ-AC857CQ  
Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Breakdown Voltage  
Symbol  
BV

CBO  

BV

CEO  

BV

EBO  

Min  
-50  
-45  
-5  
Typ  
—
Max  
—
Unit  
V
Test Condition  
I

C

= -10µA  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
—
—
V
I

C

= -10mA  
—
—
V
I

E

= -1µA  
-15  
-4  
nA  
µA  
nA  
nA  
V

CB

= -30V  
Collector Cutoff Current  
—
—
I

CBO  

V

CB

= -30V, T

J

= +150°C  
V

CE

= -50V  
Collector Emitter Cutoff Current  
Emitter-Base Cutoff Current  
—
—
—
—
—
—
—
—
—
—
—
330  
600  
4.5  
8.7  
30  
60  
-15  
-100  
—
—
—
—
—
—
—
I

CES  

I

EBO  

V

EB

= -5V  
AC857BQ  
AC857CQ  
AC857BQ  
AC857CQ  
AC857BQ  
AC857CQ  
AC857BQ  
AC857CQ  
AC857BQ  
AC857CQ  
Small Signal Current Gain (Note 10)  
Input Impedance (Note 10)  
—
kΩ  
µS  
—
h

fe  

h

ie  

I

C

= -2.0mA, V

CE

= -5V  
f = 1.0kHz  
Output Admittance (Note 10)  
h

oe  

2×10

-4  

3×10

-4  

290  
520  
-75  
Reverse Voltage Transfer Ratio (Note 10)  
DC Current Gain (Note 10)  
h

re  

—
220  
420  
—
475  
800  
-300  
-650  
—
h

FE  

I

C

= -2.0mA, V

CE

= -5V  
I

C

= – 10mA, I

B

= -0.5mA  
I

C

= – 100mA, I

B

= -5.0mA  
I

C

= -2mA, V

CE

= -5V  
Collector-Emitter Saturation Voltage (Note 10)  
—
mV  
V

CE(SAT)  

-250  
-600  
-650  
—
-750  
-820  
—
Base-Emitter Turn-On Voltage (Note 10)  
mV  
V

BE(  

ON)  
—
I

C

= -10mA, V

CE

= -5V  
I

C

= -10mA, I

B

= -0.5mA  
I

C

= -100mA, I

B

= -5mA  
V

CB

= -10V, f = 1.0MHz  
-700  
-850  
3
Base-Emitter Saturation Voltage (Note 10)  
Output Capacitance  
—
—
mV  
pF  
V

BE(SAT)  

C

obo  

f

T  

-1100  
—
V

CE

= -5V, I

C

= -10mA,  
f = 100MHz  
Transition Frequency  
100  
200  
—
MHz  
V

CE

= -5V, I

C

= -200µA  
R

S

= 2k
Ω
, f = 1kHz  
∆
f = 200Hz  
Noise Figure  
NF  
—
2
10  
dB  
Note:  
10
. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
.  
4 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

AC857BQ-AC857CQ  
Typical Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
1,000  
0.5  
T
= 150°C  
A
V
= 5V  
CE  
I
C
= 10  
I
B
0.4  
100  
T
= 25°C  
A
0.3  
0.2  
T
= -50°C  
A
T
= 25°C  
A
T
= 150°C  
A
10  

0.1  
0
T
= -50°C  
A
1
1,000  
0.1  
10  
100  
1
10  
I

C

, COLLECTOR CURRENT (mA)  
Figure 1 Typical DC Current Gain vs. Collector Current  
100  
1
1,000  
I

C

, COLLECTOR CURRENT (mA)  
Figure 2 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
1,000  
V
= 5V  
CE  
100  
10  
1
100  
10  
I

C

, COLLECTOR CURRENT (mA)  
Figure 3 Gain-Bandwidth Product vs Collector Current  
5 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

AC857BQ-AC857CQ  
Package Outline Dimensions  
SOT23  
All 7°  
H
SOT23  
GAUGE PLANE  
Dim  
A
B
C
D
F
G
H
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
0.25  
J
K
K1  
a
M
A
2.05  
3.00  
1.83  
2.90  
0.05  
L
L1  
J
0.013 0.10  
K
K1  
L
L1  
M
a
0.890 1.00 0.975  
0.903 1.10 1.025  
C
B
0.45  
0.25  
0.61  
0.55  
0.55  
0.40  
0.085 0.150 0.110  
0° 8°
 
—  
D
All Dimensions in mm  
G
F
Suggested Pad Layout  
SOT23  
Y
Dimensions Value
 
(in mm)  
C
X
X1  
Y
2.0  
0.8  
1.35  
0.9  
Y1  
C
Y1  
2.9  
X
X1  
6 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

AC857BQ-AC857CQ  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2017, Diodes Incorporated  
7 of 7  
April 2017  
© Diodes Incorporated  
AC857BQ-AC857CQ  
Document Number:
 
DS39359 Rev. 3 – 2  

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Authorized Distributor  
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