Diodes-Incorporated-BC857BFZ-7B

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Diodes-Incorporated-BC857BFZ-7B
BC857BFZ  
45V PNP SMALL SIGNAL TRANSISTOR IN DFN0606  
Features  
Mechanical Data  
BV

CEO

> -45V  
Case: X2-DFN0606-3  
I

C

= -100mA High Collector Current  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish
NiPdAu, Solderable per MIL-STD-202,  
P

D

= 925mW Power Dissipation  
0.36mm

2

Package Footprint, 40% Smaller than DFN1006  
0.4mm Height Package Minimizing Off-Board Profile  
Complementary NPN Type BC847BFZ  
e4  
Method 208  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Weight: 0.0008 grams (Approximate)  
C
X2-DFN0606-3  
B
E
Top View  
Device Schematic  
Device Symbol  
Bottom View  
Top View  
Ordering Information
(Note 4)  
Product  
BC857BFZ-7B  
Marking  
3W  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
7
8
10,000  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See

r more information about Di
odes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at

Marking Information  
3W = Product Type Marking Code  
Top View  
Bar Denotes Base  
and Emitter Side  
1 of 7  
May 2015  
© Diodes Incorporated  
BC857BFZ  
Document number: DS37158 Rev. 2 – 2  

BC857BFZ  
Absolute Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
-50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-45  
V
-6.0  
-100  
-200  
V
Continuous Collector Current  
Peak Pulse Collector Current  
mA  
mA  
I

CM  

Thermal Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
P

D  

R

  

Value  
270  
Unit  
(Note 5)  
(Note 6)  
(Note 5)  
(Note 6)  
(Note 7)  
Power Dissipation  
mW  
925  
465  
Thermal Resistance, Junction to Ambient  
°C/W  
JA  
135  
Thermal Resistance, Junction to Lead  
135  
°C/W
  
R

  

JL  
Operating and Storage and Temperature Range  
-55 to +150  
°C  
T

J

, T

STG  

ESD Ratings
(Note 8)  
Characteristic  
Electrostatic Discharge – Human Body Model  
Electrostatic Discharge – Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
200  
Unit  
V
JEDEC Class  
3A  
B
V
Notes:  
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured  
under still air conditions whilst operating in steady state condition.
 
The entire exposed collector pad is attached to the heatsink.  
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.  
7. Thermal resistance from junction to solder-point (on the exposed collector pad).  
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
May 2015  
© Diodes Incorporated  
BC857BFZ  
Document number: DS37158 Rev. 2 – 2  

BC857BFZ  
Thermal Characteristics and Derating Information  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
V

CE(sat)  

Limited  
Minimum Copper  
100m  
DC  
1s  
100ms  
10ms  
10m  
1m  
1ms  
Single Pulse  
T

amb

=25°C  
100µs  
10  
Minimum Copper  
100m  
1
0
20  
40  
60  
80 100
 
120 140 160  
-V

CE

Collector-Emitter Voltage (V)  
Temperature (°C)  
Safe Operating Area  
Derating Curve  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
100  
10  
1
Single Pulse  
T

amb

=25°C  
T

amb

=25°C  
Minimum Copper  
Minimum Copper  
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
0
0.1  
100µ 1m
 
10m 100m  
1
10  
100  
1k  
100µ 1m
 
10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Width (s)  
Pulse Power Dissipation  
3 of 7  
May 2015  
© Diodes Incorporated  
BC857BFZ  
Document number: DS37158 Rev. 2 – 2  

BC857BFZ  
Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typical  
Max  
Unit  
Test Condition  
—
—
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 9)  
Collector-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-50  
-50  
-45  
-6.0  
—
-100  
-90  
-65  
-8.5  
—
V
V
BV

CBO  

BV

CES  

BV

CEO  

BV

EBO  

I

CBO  

I

C

= -50µA, I

B

= 0  
I

C

= -50µA, I

B

= 0  
I

C

= -1mA, I

B

= 0  
I

E

= -50µA, I

C

= 0  
V

CB

= -40V  
—
V
—
V
-15  
-15  
nA  
nA  
—
—
Collector-Emitter Cutoff Current  
I

CES  

V

CE

= -40V  
ON CHARACTERISTICS
 
(Note 9)  
—
—
340  
330  
I

C

= -10µA,
 
V

CE

= -5.0V  
I

C

= -2.0mA,
 
V

CE

= -5.0V  
DC Current Gain  
—
h

FE  

200  
470  
-70  
-300  
-175  
-500  
I

C

= -10mA, I

B

= -0.5mA  
I

C

= -100mA, I

B

= -5.0mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
—
—
mV  
mV  
mV  
V

CE(sat)  

V

BE(sat)  

V

BE(on)  

-760  
-885  
-1,000  
-1,100  
I

C

= -10mA, I

B

= -0.5mA  
I

C

= -100mA, I

B

= -5.0mA  
I

C

= -2.0mA, V

CE

= -5V  
I

C

= -10mA, V

CE

= -5V  
-670  
-715  
-780  
-850  
-600  
—
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
—
2.0  
—
—
pF  
C

obo  

f

T  

V

CB

= -10.0V, f = 1.0MHz, I

E

= 0  
V

CE

= -5V, I

C

= -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
100  
270  
MHz  
Note:  
9. Measured under pulsed conditions. Pulse width
300µs. Duty
 
cycle
2%.  
4 of 7  
May 2015  
© Diodes Incorporated  
BC857BFZ  
Document number: DS37158 Rev. 2 – 2  

BC857BFZ  
Typical Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
0.18  
600  
550  
I
= -2mA  
B
T =
 
150°C  
A
V
= 5V  
CE  
I
= -1.8mA  
B
0.16  
I
= -1.6mA  
B
500  
450  
400  
350  
T
= 125°C  
A
I
= -1.4mA  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
B
I
= -1.2mA  
B
T
= 85°C  
= 25°C  
A
A
I
= -1mA  
B
I
= -0.8mA  
B
T
300  
250  
200  
I
= -0.6mA  
= -0.4mA  
B
I
I
B
B
T
= -55°C  
A
150  
100  
= -0.2mA  
0.02  
0
50  
0
0
1
2
3
4
5
0
1
10  
100  
1,000  
-V

CE

, COLLECTOR-EMITTER VOLTAGE (V)  
-I

C

, COLLECTOR CURRENT (mA)  
Fig. 4 Typical Collector Current  
vs. Collector-Emitter Voltage  
Fig. 5 Typical DC Current Gain vs. Collector Current  
1
1
I
/I =
 
20  
B
I
/I =
 
10  
B
C
C
T
= 150°C  
T
= 150°C  
A
A
0.1  
0.1  
T
= 125°C  
A
T
= 125°C  
A
T
= 85°C  
T
= 85°C  
A
A
T
A
= 25°C  
T
A
= 25°C  
T
= -55°C  
A
T
A
= -55°C  
0.01  
0.01  
0.1  
1
10  
100  
1,000  
0.1  
1
10  
100  
1,000  
-I

C

, COLLECTOR CURRENT (mA)  
-I

C

, COLLECTOR CURRENT (mA)  
Fig. 6 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
Fig. 7 Typical Collector-Emitter Saturation Voltage  
vs. Collector Current  
1.2  
1.0  
1.0  
Gain = 10  
V
= -5V  
CE  
T
T
= -55°C  
= 25°C  
0.8  
A
0.8  
0.6  
T
T
= -55°C  
= 25°C  
A
A
0.6  
0.4  
0.2  
A
T
= 150°C  
A
T =
 
150°C  
A
T
= 125°C  
A
T
= 85°C  
T
= 125°C  
A
A
0.4  
0.2  
T
= 85°C  
A
0.1  
1
10  
100  
1,000  
0.1  
1
10  
100  
1,000  
-I

C

, COLLECTOR CURRENT (mA)  
-I

C

, COLLECTOR CURRENT (mA)  
Fig. 8 Typical Base-Emitter Turn-On Voltage  
vs. Collector Current  
Fig. 9 Typical Base-Emitter Saturation Voltage  
vs. Collector Current  
5 of 7  
May 2015  
BC857BFZ  
© Diodes Incorporated  
Document number: DS37158 Rev. 2 – 2  

BC857BFZ  
Package Outline Dimensions  
Please see AP02002 at

r the latest version.  
X2-DFN0606-3  
A
Dim  
A
A1  
b
Min  
0.36  
0
Max  
0.42  
0.05  
Typ  
A1  
0.39  
0.02  
0.15  
0.62  
Seating Plane  
0.10  
0.57  
0.20  
0.67  
D
D2  
D3  
E
E2  
e
k
L
L2  
0.155 BSC  
0.185 BSC  
0.67  
D
D2  
0.57  
0.40  
0.62  
0.50  
D3  
e/2  
0.60  
0.35 BSC  
0.16 REF  
0.21  
0.09  
0.11  
0.15  
0.21  
0.31  
E2  
e
E
All Dimensions in mm  
b( 2x)  
k
L2  
L( 2x)  
Suggested Pad Layout  
Please see AP02001 at

r the latest version.  
X
Dimensions  
Value (in mm)  
Y
C
X
X1  
X2  
Y
0.350  
0.280  
0.350  
0.760  
0.200  
0.600  
C
Y1  
Y1  
X1  
X2  
6 of 7  
May 2015  
© Diodes Incorporated  
BC857BFZ  
Document number: DS37158 Rev. 2 – 2  

BC857BFZ  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference.
 
Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
7 of 7  
May 2015  
© Diodes Incorporated  
BC857BFZ  
Document number: DS37158 Rev. 2 – 2  

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Authorized Distributor  
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