Diodes-Incorporated-BS170FTA

SOT23 N-CHANNEL ENHANCEMENT  

MODE VERTICAL DMOS FET  

B

S

170F  

I

S

SUE 3 – J

A

NUARY 1996  

FEATURES  

*

*

60

V

o

l

t V

DS  

R

D

S

(

ON)

= 5

Ω

 

S

D

G

PARTMARKING DETAIL – MV  

SOT23  

AB

S

O

L

U

TE MAXIMUM RATING

S

.  

PARAMETER  

S Y

M

BOL  

V

DS  

V

A

L

U

E  

UN

I

T  

V

Dra in -S o u rce

 

Vo ltag e  

60  

0.15  

Co n tin u o u s

 

Dra in

 

Cu rren t

 

at T

a m b

=25°C  

Pu ls e d

 

Dra in

 

Cu rre n t  

I

D  

mA  

A

I

DM  

3

Ga te

 

S o u rce

 

V

o lta g e  

V

G

S  

V

±

20  

Po w e r

 

Dis s ip a tio n

 

a t

 

T

a m b

=25°C  

Op e ratin g

 

a n d

 

S to ra g e

 

Te m p e ratu re

 

Ra n g e  

P

t

o t  

330  

mW  

°C  

T

j

:T

s

t

g  

-55 to +150  

ELECTRICAL CHARACTERI

S

T

ICS

 

(

a

t T  

= 25°C unless otherw

 

ise stated).  

am b  

PARAMETER  

S Y

M

BOL

 

M

I

N

. TYP.

 

MAX. UNIT

 

CONDITIONS .  

Dra in -S o u rce  

Bre akd o w n

 

V

o lt

a

g e  

BV

DS S  

60  

90  

V

V

I

D

=100

µ

A, V

G

S

=0V  

Ga te-S o u rce

 

Th res h o ld  

Vo lta g e  

V

G

S (th )  

0.8  

3

I

D

=1m A,

 

V

DS

= V

G

S  

Ga te-Bo d y

 

L

e

a

k

a g e  

I

G

S S  

I

DS S  

10  

n A  

V

G

S

=15V, V

DS

=0V  

V

DS

=25V, V

G

S

=0V  

Ze ro

 

Ga te

 

V

o lta g e

 

Dra in  

Cu rre n t  

0.5  

µ

A  

S ta tic

 

Drain -S o u rce

 

On -S ta te  

Res is ta n ce

 

(1)  

R

DS (o n )  

5

V

G

S

=10

V

, I

D

=200m A  

V

DS

=10V, I

D

=200m A  

Ω

Fo rw a rd

 

Tra n s co n d u ctan ce  

(1)(2)  

g

fs  

200  

60  

m S  

p F  

In p u t

 

Ca p a citan ce

 

(2)  

C

is s  

V

DS

=10

V

, V

GS

=0

V

,  

f=1MHz  

Tu rn -On

 

De lay

 

Tim e

 

(2)(3)  

Tu rn -Off

 

De la y

 

Tim e

 

(2)(3)  

t

d (o n )  

t

d (o ff)  

10  

10  

n s  

n s  

V

DD

≈

-15V, I

D

=600m A  

(1) Measured under pu

l

s

ed cond

i

ti

o

ns. W

i

d

th=300

µ

s

.

D

u

ty cycle

≤

2% (2)

 

Sam ple

 

test.  

(3) Switching tim

 

es m

 

easured with 50

Ω

s

ource

i

m

 

p

edance and <5ns rise tim

 

e on a pulse generator  

Sp

i

ce param

 

eter data is available upon request for this device  

F

o

r typical characteristics graphs refer to Z

V

N

3306F datasheet.  

3 – 54