Diodes-Incorporated-BSP75GTA
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BSP75G
60V self-protected low-side IntelliFET
TM
MOSFET switch
Summary
Continuous drain source voltage
On-state resistance
V
=60V
DS
550m
⍀
SOT223
Nominal load current
Clamping energy
1.4A (V
= 5V)
IN
550mJ
Description
S
Self-protected low side MOSFET. Monolithic over temperature, over
current, over voltage (active clamp) and ESD protected logic level
power MOSFET intended as a general purpose switch.
D
D
IN
Note:
Features
The tab is connected to the drain pin, and must
be electrically isolated from the source pin.
Connection of significant copper to the tab is
recommended for best thermal performance.
•
•
•
•
•
•
•
•
Short circuit protection with auto restart
Over-voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input protection (ESD)
High continuous current rating
Load dump protection (actively protects load)
Logic level input
Ordering information
Device
Reel size
(inches)
T
a
pe width
Quantity per reel
(mm)
BSP75GTA
BSP75GTC
7
12mm embossed
12mm embossed
1,000
4,000
13
Device marking
BSP75G
© Zetex Semiconductors plc 2006
BSP75G
Functional block diagram
D
Over voltage
protection
dV/dt
limitation
IN
Over current
protection
Human body
Logic
ESD protection
Over temperature
protection
S
Applications
•
•
Especially suited for loads with a high in-rush current such as lamps and motors.
All types of resistive, inductive and capacitive loads in switching applications.
•
C compatible power switch for 12V and 24V DC applications.
•
•
•
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear mode capability – the current-limiting protection circuitry is designed to de-activate at
low Vds, in order not to compromise the load current during normal operation. The design
maximum DC operating current is therefore determined by the thermal capability of the
package/board combination, rather than by the protection circuitry.
© Zetex Semiconductors plc 2006
BSP75G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Continuous drain-source voltage
V
60
V
DS
Drain-source voltage for short circuit protection
Continuous input voltage
Peak input voltage
V
36
V
V
DS(SC)
V
V
-0.2 … +10
-0.2 … +20
-40 to +150
-55 to +150
2.5
IN
IN
V
Operating temperature range
Storage temperature range
(a)
T ,
°C
°C
W
j
T
stg
P
Power dissipation at T
=25
°
C
D
A
(a)
I
I
1.6
1.4
A
A
Continuous drain current @ V
=10V; T
=25°C
D
IN
A
(a)
Continuous drain current @ V
=5V; T
=25°C
D
IN
A
Pulsed drain current @ V
=10V
I
5
3
A
A
IN
DM
(a)
I
I
S
Continuous source current (body diode)
Pulsed source current (body diode)
5
A
S
Unclamped single pulse inductive energy
Load dump protection
E
550
80
mJ
V
AS
V
LoadDump
Electrostatic discharge (human body model)
V
4000
V
ESD
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
E
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
50
°C/W
⍜
JA
⍜
JA
⍜
JA
Junction to ambient
(b)
24
°C/W
°C/W
Junction to ambient
(c)
208
Junction to ambient
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b
)
F
or a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
© Zetex Semiconductors plc 2006
BSP75G
Electrical characteristics (at
T
amb = 25°C unless otherwise stated)
Parameter
Symbol
Min. Typ. Max. Unit Conditions
Static characteristics
Drain-source clamp voltage
V
60
1
70
0.1
3
75
3
V
A
A
V
I =10mA
D
DS(AZ)
Off-state drain current
Off-state drain current
I
I
V
V
V
=12
V
, V
=
0V
IN
DSS
DS
DS
DS
15
=32
V
, V
=
0V
IN
DSS
(*)
V
2.1
0.7
1.5
4
=V ,
I =1mA
GS D
Input threshold voltage
IN(th)
Input current
Input current
Input current
I
I
I
1.2
2.7
7
mA V
=+5V
IN
IN
IN
IN
mA V
=+7V
IN
mA V
=+10V
IN
Static drain-source on-state
resistance
Static drain-source on-state
resistance
R
R
520
675
m
⍀
V =+5V,
I =0.7A
IN D
DS(on)
DS(on)
385
550
m
⍀
V =+10V,
I =0.7A
IN D
(†)
I
I
0.7
2
1.1
3
1.75
4
A
A
V =+5V,
V >5V
IN DS
D(LIM)
Current limit
(†)
V =+10
V
,
V
>
5V
D(LIM)
IN
DS
Current limit
Dynamic characteristics
T
u
rn-on time (V
to 90% I
)
t
2.2
13
10
20
20
10
s
s
R =22
⍀
, V
=12
V
,
L DD
IN
D
on
V =0
to +10V
IN
T
u
rn-off time (V
to 90% I
)
t
R =22
⍀
, V
=12
V
,
L DD
IN
D
off
V =+10V
to 0V
IN
-dV
DS
/dt
on
dV /dt
Slew rate on (70 to 50% V
)
)
10
V/
s R
=22
⍀
, V
=12
V
,
L DD
DD
DD
V =0
to +10V
IN
Slew rate off (50 to 70% V
3.2
V/
s
R
L
=22
⍀
, V
DD
=12
V
,
DS
off
V
IN
=+10V to 0V
(‡)
Protection functions
Required input voltage for
V
4.5
V
PROT
over temperature protection
Thermal overload trip
temperature
T
150
175
10
°
C
°
C
JT
Thermal hysteresis
Unclamped single pulse
inductive energy Tj=25
°
C
Unclamped single pulse
inductive energy Tj=150
°
C
Inverse diode
E
E
550
200
mJ
I
I
=0.7A, V
=32V
DD
AS
D(ISO)
mJ
=0.7A, V
=32V
AS
D(ISO)
DD
Source drain voltage
V
1
V =0
V
,
–
I =1.4A
IN D
SD
NOTES:
(*) Protection features may operate outside spec for V
IN
<4.5V.
(†) The drain current is limited to a reduced value when V
DS
exceeds a safe level.
(‡) Integrated
protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed
for continuous, repetitive operation.
© Zetex Semiconductors plc 2006
BSP75G
Package outline – SOT223
Dim.
Millimeters
Min. Max.
Inches
Min.
Dim.
Millimeters
Min. Max.
Inches
Max.
0.071
0.004
0.033
0.122
0.013
0.264
Min.
0.0905 BSC
0.181 BSC
Max.
A
A1
b
–
1.80
0.10
0.84
3.10
0.33
6.70
–
e
e1
E
2.30 BSC
4.60 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
–
3.70
0.130
0.355
–
0.146
–
–
–
–
D
–
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
