Diodes-Incorporated-BSS8402DWQ-13
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BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.
“Green” Device (Note 3)
The BSS8402DWQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
I
D
Device
BV
DSS
R
DS(ON) Max
T
A
= +25°C
115mA
Q1
Q2
60V
13.5
Ω
@ V
GS
= 10V
10
Ω
@ V
GS
= -5V
-50V
-130mA
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Mechanical Data
General Purpose Interfacing Switch
Power Management Functions
Analog Switch
Case: SOT363
Case Material:
Molded Plastic. “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
e3
Weight: 0.006 grams (Approximate)
SOT363
D
1
G
2
S
2
Q
Q
2
1
S
1
G
1
D
2
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
BSS8402DW-7-F
BSS8402DW-13-F
BSS8402DWQ-7
BSS8402DWQ-13
Compliance
Standard
Standard
Automotive
Automotive
Case
Packaging
SOT363
SOT363
SOT363
SOT363
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are d
efined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
KNP = Product Type Marking Code
YM or YM= Date Code Marking
Y or Y = Year (ex: G = 2019)
M = Month (ex: 9 = September)
Date Code Key
Year
2003
2004
2005
2006
~
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
P
R
S
T
~
F
G
H
I
J
K
L
M
N
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
BSS8402DW
Maximum Ratings
–
Total Device
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
200
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
625
R
θ
JA
-55 to +150
T
J,
T
STG
Maximum Ratings N-CHANNEL
–
Q
1
, 2N7002 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
Value
60
Unit
V
Drain-Source Voltage
60
V
Drain-Gate Voltage R
GS
1.0M
Ω
V
DGR
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
V
GSS
Drain Current (Note 5)
Continuous
Continuous @ +100°C
Pulsed
115
73
800
mA
I
D
Maximum Ratings P-CHANNEL
–
Q
2
, BSS84 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
-50
Unit
V
Drain-Source Voltage
-50
V
Drain-Gate Voltage R
GS
20K
Ω
Gate-Source Voltage
Continuous
Continuous
V
20
Drain Current (Note 5)
-130
mA
Note:
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on
Diodes Incorporated’s
suggested pad layout document,
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
BSS8402DW
Electrical Characteristics N-CHANNEL
–
Q
1
, 2N7002 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
70
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
@ T
C
= +25°C
1.0
500
µA
nA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
@ T
C
= +125°C
Gate-Body Leakage
±10
2.5
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
1.0
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
3.2
4.4
7.5
13.5
Static Drain-Source On-Resistance
@ T
J
= +25°C
@ T
J
= +125°C
Ω
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.5
80
1.0
A
I
D(ON)
g
FS
mS
22
11
50
25
pF
pF
pF
C
iss
C
oss
C
rss
Output Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
7.0
11
20
20
ns
ns
t
D(ON)
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150
Ω
, V
GEN
= 10V, R
GEN
= 25
Ω
Turn-Off Delay Time
t
D(OFF)
Electrical Characteristics P-CHANNEL
–
Q
2
, BSS84 Section
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol Min
Typ
Max
Unit
Test Condition
-50
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= +25°C
V
DS
= -50V, V
GS
= 0V, T
J
= +125°C
V
DS
= -25V, V
GS
= 0V, T
J
= +25°C
-1
-2
-100
µA
µA
nA
Zero Gate Voltage Drain Current
Gate-Body Leakage
nA
I
GSS
10
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.8
-2.0
10
V
Ω
S
V
GS(TH)
R
DS(ON)
g
FS
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.05
45
25
12
pF
pF
pF
C
iss
C
oss
C
rss
Output Capacitance
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
10
18
ns
ns
t
D(ON)
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50
Ω
, V
GS
= -10V
Turn-Off Delay Time
t
D(OFF)
Note:
6. Short duration pulse test used to minimize self-heating effect.
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
BSS8402DW
N-CHANNEL
–
2N7002 Section
7
6
1.0
T
j
= 25°C
0.8
0.6
0.4
5
4
3
2
0.2
0
1
0
0
0.2
0.4
I
D
, DRAIN CURRENT (A)
Figure 2
On-Resistance vs. Drain Current
0.6
0.8
1.0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1
On-Region Characteristics
3.0
6
5
2.5
2.0
4
3
2
1.5
1.0
1
0
V
I
= 10V,
GS
= 200mA
D
-55 -30
-5
20
45
70 95
120 145
0
2
4
6
8
10 12 14 16 18
T
J
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3
On-Resistance vs. Junction
T
emperature
Figure 4
On-Resistance vs. Gate-Source Voltage
250
200
10
V
= 10V
DS
9
8
7
6
5
4
3
2
150
100
50
0
1
0
0
0.2
0.4
I
D
, DRAIN CURRENT (A)
Figure 5
Typical Transfer Characteristics
0.8
50
T
A
, AMBIENT TEMPERATURE (°C)
Figure 6
Max Power Dissipation vs. Ambient
T
emperature
0.6
1
75
125 150 175
0
25
100
200
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
BSS8402DW
1000
2
1.8
1.6
1.4
1.2
1
)
(
T
= 150°C
A
100
10
1
T
= 125°C
A
T
= 85°C
A
I
T
= 25°C
A
,
I
0.8
-50 -25
0
25
50
75
100 125 150
5
10 15 20 25 30 35 40 45 50 55 60
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
Figure 7 Typical Drain-Source Leakage Current vs. Voltage
P-CHANNEL
–
BSS84 Section
-600
-1.0
-0.8
T
= 25°C
A
-500
-400
-300
-200
-0.6
-0.4
-0.2
-0.0
-100
0
-5
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 10 Drain Current vs. Gate-Source Voltage
0
-1
-2
-3
-4
-6
-7
-8
0
-1
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Drain-Source Current vs. Drain-Source Voltage
15
10
V
I
= -10V
GS
= -0.13A
9
D
12
9
8
7
6
5
6
4
3
2
3
0
T
= 125°C
A
1
0
T
= 25°C
A
0
-50 -25
25
T
J
, JUNCTION TEMPER
A
T
URE
Figure 12 On-Resistance vs. Junction
T
emperature
October 2019
50
75 100
125 150
0
-1
-2
-4
-5
-3
(
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 11 On-Resistance vs. Gate-Source Voltage
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© Diodes Incorporated
Document number: DS30380 Rev. 23 – 2
BSS8402DW
25.0
20.0
1000
V
= -3.5V
T
= 150°C
GS
A
V
= -3V
GS
100
10
1
15.0
10.0
V
= -5V
= -6V
GS
T
= 125°C
A
V
= -4V
GS
V
GS
T
= 85°C
A
T
= 25°C
A
5.0
0.0
V
= -8V
GS
V
= -10V
GS
-0.2
-0.0
-0.4
-0.6
-0.8
1.0
5
10 15 20 25 30 35 40 45 50
-V
D
S
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 13 On-Resistance vs. Drain Current
Figure 14 Typical Drain-Source Leakage Current vs. Voltage
2
1.8
1.6
1.4
1.2
1
)
(
,
–
0.8
-50 -25
T
J
, JUNCTION TEMPERATURE (°C)
Figure 15 Gate Threshold Variation vs. Junction Temperature
0
25
50
75 100
125 150
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
BSS8402DW
Package Outline Dimensions
SOT363
E
E1
SOT363
Dim Min Max
Typ
A1
0.00 0.10
0.05
A2
0.90 1.00
0.95
b
c
D
E
0.10 0.30
0.25
0.10 0.22
0.11
1.80 2.20
2.15
2.00 2.20
2.10
F
b
E1
1.15 1.35
1.30
D
e
F
L
a
0.650 BSC
0.40 0.45
0.425
0.25 0.40
0.30
0
°
8
°
—
A2
All Dimensions in mm
c
a
L
e
A1
Suggested Pad Layout
SOT363
C
Value
Dimensions
(in mm)
C
G
X
Y
Y1
0.650
1.300
0.420
0.600
2.500
Y1
G
Y
X
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
BSS8402DW
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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October 2019
© Diodes Incorporated
BSS8402DW
Document number: DS30380 Rev. 23 – 2
