Diodes-Incorporated-DDTC143ZLP-7
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DDTCxxxxLP (R1
R2 Series)
NPN PRE-
BIASED (R1≠R2) SMALL SIGNAL IN DFN1006
Product Summary
Mechanical Data
Part Number
DDTC123JLP
DDTC143ZLP
DDTC114YLP
R1 (NOM)
R2 (NOM)
47
kΩ
Marking
Case: X1-DFN1006-3
N0
2.2
kΩ
4.7
kΩ
10
kΩ
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Marking Information
Terminals: Finish
NiPdAu Solderable per MIL-STD-202,
N1
N2
47
kΩ
47
kΩ
Features
Epitaxial Planar Die Construction
e4
Method 208
Ultra-Small Leadless Surface Mount Package
Ideally Suited for Automated Assembly Processes
Weight: 0.0009 grams (Approximate)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
X1-DFN1006-3
3
C
OUT
C
B
1
B
2
3
IN
3
OUT
IN
E
1
R
1
E
C
E
R
2
R
1
R
2
GND
1
2
B
2
GND
Package Pin Out
Configuration
Bottom View
Device Schematics
Ordering Information
(Note 4)
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
3,000
Part Number
DDTC123JLP-7
DDTC143ZLP-7
DDTC114YLP-7
DDTC123JLP-7B
DDTC143ZLP-7B
DDTC114YLP-7B
N0
N1
N2
N0
N1
N2
7
7
7
7
7
7
8
8
8
8
8
8
3,000
3,000
10,000
10,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
Nx
From date code 1527 (YYWW),
this changes to:
Nx
DDTC123JLP-7
DDTC143ZLP-7
DDTC114YLP-7
Top View
Dot Denotes Collector Side
Top View
Bar Denotes Base and Emitter Side
Nx
Top View
Bar Denotes Base and Emitter Side
DDTC123JLP-7B
DDTC143ZLP-7B
DDTC114YLP-7B
Nx = Part Type Marking Code
(see Ordering Information)
1 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Supply Voltage
P/N
Symbol
V
CC
Value
50
Unit
V
DDTC123JLP
DDTC143ZLP
DDTC114YLP
DDTC123JLP
DDTC143ZLP
DDTC114YLP
-5 to +12
-5 to +30
-5 to +40
100
100
70
Input Voltage
V
V
IN
Output Voltage
mA
mA
I
O
Maximum Collector Current
100
I
C(MAX)
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Power Deration above +25°C
Symbol
P
D
P
der
Value
250
2
Unit
mW
mW/
C
°C/W
C
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
500
R
JA
-55 to +150
T
J
, T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
P/N
Symbol
Min
Typ
Max
Unit
Test Condition
Off Characteristics
(Note 6)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(Note 7)
Emitter-Base Breakdown Voltage (Note 7)
Collector Cutoff Current (Note 7)
50
50
4.5
0.5
V
V
0.5
0.5
0.5
0.5
0.5
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
C
= 50µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
I
E
= 50µA, I
C
= 0
µA
µA
µA
µA
mA
V
V
CE
= 50V, V
EB(OFF)
= 3.0V
V
CE
= 50V, V
EB(OFF)
= 3.0V
V
CB
= 50V, I
E
= 0
Base Cutoff Current (I
BEX
)
I
BL
Collector-Base Cut Off Current
I
CBO
Collector-Emitter Cut Off Current, I
O(OFF)
Emitter-Base Cut Off Current
Input-Off Voltage
I
CEO
V
CE
= 50V, I
B
= 0
I
EBO
V
EB
= 5V, I
C
= 0
V
I(OFF)
V
CE
= 5V, I
C
= 100µA
On Characteristics
(Note 6)
DDTC123JLP
Base-Emitter Turn-On Voltage (Note 7)
DDTC143ZLP
0.85
0.85
0.95
0.98
0.998
0.98
1.1
7.2
1.5
7.2
0.15
0.2
0.3
30
V
V
BE(ON)
V
CE
= 5V, I
C
= 2mA
DDTC114YLP
DDTC123JLP
DDTC143ZLP
Base-Emitter Saturation Voltage (Note
7)
V
V
V
BE(SAT)
V
I(ON)
I
I
I
C
= 10mA, I
B
= 1mA
V
O
= 0.3V, I
C
= 5mA
V
I
= 5V
DDTC114YLP
Input-On Voltage
DDTC123JLP
Input Current
DDTC143ZLP
DDTC114YLP
mA
50
70
125
150
180
-30
-20
V
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 5mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
J
= 2.5mA, I
O
= 50mA
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
V
CE(SAT)
V
Output On Voltage (Same as V
CE(SAT)
Input Resistor +/-30%
)
V
O(ON)
R1
(R2/R1)
%
%
Resistor Ratio
-20
Small Signal Characteristics
Transition Frequency (gain bandwidth product)
250
MHz
f
T
V
CE
= 10V, I
E
= 5mA, f = 100MHz
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6.
Measured under pulsed conditions. Pulse width ≤ 300µs.
Duty cycle ≤ 2%.
7. Guaranteed by design.
2 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
Derating Curve
(@T
A
= +25°C, unless otherwise specified.)
300
250
200
150
100
50
R
= 500
C
/
W
J
A
0
0
25
50
75
100
125
150 175
T
A
, AMBIENT TEMPERATURE (
C)
Fig. 1
Power Dissipation vs. Ambient temperature
(Note 5)
3 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
Typical Electrical Characteristics of DDTC123JLP
(@T
A
= +25°C, unless otherwise specified.)
350
I
/I =
10
B
C
V
= 5V
CE
300
T
= 150
C
A
250
200
150
100
T
= 85
C
A
T
A
= 25
C
A
T
= 150
C
A
T
= -55
C
T
= 85
C
A
T
= 25
C
A
50
0
T
= -55
C
A
0.1
1
10
100
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector Emitter Saturation Voltage
vs. Collector Current
0.15
2
I
= 4.5mA
I
= 4.0mA
I
= 5.0mA
B
B
B
I
= 3.5mA
B
1.8
I
= 3.0mA
B
V
I
= 0.3V
= 5mA
O
0.12
1.6
O
1.4
1.2
1
0.09
I
= 2.5mA
B
I
= 2.0mA
B
0.8
0.06
0.03
0
I
= 1.5mA
B
0.6
0.4
I
= 1.0mA
B
I
= 0.5mA
B
0.2
0
0
1
2
3
4
5
6
7
8
9
10
-60
-30
0
30
60
90
120 150
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4
Typical Collector Current vs. Collector Emitter Voltage
Fig. 5
Typical Input Voltage vs. Ambient
T
emperature
30
I
/I =
10
B
V
= 5V
C
CE
27
4.5
24
21
18
3
15
12
9
T
= 25
C
A
1.5
T
= 25
C
T
= -55
C
A
A
6
T
= 150
C
A
T
= -55
C
A
T
= 150
C
3
0
A
T
A
= 85
C
T
= 85
C
A
0
0.1
1
10
100
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 7
Typical Base Emitter Saturation Voltage
vs. Collector Current
Fig. 6
Typical Base Emitter Voltage vs. Collector Current
4 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
Typical Electrical Characteristics of DDTC143ZLP
(@T
A
= +25°C, unless otherwise specified.)
350
100
V
= 5V
CE
I
/I =
10
B
C
T
= 150
C
A
300
T
= 85
C
A
10
250
200
T
= 25
C
A
1
150
100
T
= -55
C
T
= 150
C
A
A
0.1
T
= 85
C
A
50
0
T
A
= 25
C
T
= -55
C
A
0.01
0.1
1
10
100
1,000
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 8
Typical DC Current Gain vs. Collector Current
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 9
Typical Collector Emitter Saturation Voltage
vs. Collector Current
0.05
15
12
9
0.04
0.03
0.02
6
3
0
0.01
0
T
= 25
C
A
T
= 150
C
T
= -55
C
A
A
T
= 85
C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.1
1
10
100
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
I
C
, OUTPUT CURRENT (mA)
Fig. 10
Typical Collector Current vs. Collector Emitter Voltage
10
Fig. 11
Typical Input Voltage vs. Output Current
30
27
I
/I =
10
B
C
V
= 5V
9
8
7
CE
24
21
18
6
5
4
15
12
9
3
2
1
0
T
= 25
C
A
6
T
= 25
C
A
T
T
= -55
C
T
= 150
C
A
A
T
= -55
C
A
3
0
T =
85
C
A
T
= 150
C
A
= 85
C
A
0.1
1
10
100
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 13
Typical Base Emitter Saturation Voltage
vs. Collector Current
Fig. 12
Typical Base Emitter Voltage vs. Collector Current
5 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
Typical Electrical Characteristics of DDTC114YLP
(@T
A
= +25°C, unless otherwise specified.)
350
300
250
200
150
100
10
V
= 5V
CE
I
/I =
10
B
C
T
= 150
C
A
T
= 85
C
A
1
T
= 25
C
A
0.1
T
= 150
C
A
T
= -55
C
A
T
= 85
C
A
50
0
T
= 25
C
A
T
= -55
C
A
0.01
0.1
1
10
100
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 14
Typical DC Current Gain vs. Collector Current
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Fig. 15
Typical Collector Emitter Saturation Voltage
vs. Collector Current
0.1
1.5
1.2
I
= 1.0mA
B
I
= 0.9mA
B
0.09
I
= 0.8mA
= 0.7mA
= 0.6mA
B
V
I
= 0.3V
= 5mA
I
O
B
I
0.08
0.07
O
B
I
= 0.5mA
B
I
= 0.4mA
= 0.3mA
B
I
0.9
B
0.06
0.05
0.04
0.03
I
= 0.2mA
B
0.6
0.3
0.02
0.01
0
I
= 0.1mA
B
0
-60
0
1
2
3
4
5
6
7
8
9
10
-30
0
30
60
90
120 150
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 16
Typical Collector Current vs. Collector Emitter Voltage
15
Fig. 17
Typical Input Voltage vs. Ambient
T
emperature
30
V
= 5V
CE
13.5
12
10.5
9
I
/I =
10
B
27
24
21
18
15
12
9
C
7.5
6
4.5
3
T
= 25
C
A
6
T
= 25
C
A
T
= 150
C
A
T
= -55
C
T
= -55
C
A
A
3
1.5
0
T
A
= 85
C
T
= 150
C
A
T
= 85
C
A
0
0.1
0.1
1
10
100
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 18
Typical Base Emitter Voltage vs. Collector Current
Fig. 19
Typical Base Emitter Saturation Voltage
vs. Collector Current
6 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
Package Outline Dimensions
A
A1
X1-DFN1006-3
Dim Min Max Typ
Seating Plane
A
0.47 0.53 0.50
A1
0.00 0.05 0.03
0.10 0.20 0.15
b2
0.45 0.55 0.50
D
Pin #1 ID
b
b
D
E
e
0.95 1.075 1.00
0.55 0.675 0.60
–
–
0.35
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
E
b2
e
L3
z
–
–
0.40
0.02 0.08 0.05
All Dimensions in mm
z
L2
L3
L1
Suggested Pad Layout
C
Y
Dimensions Value
(in mm)
C
G1
G2
X
X1
Y
0.70
0.30
0.20
0.40
1.10
0.25
0.70
Y1
G2
X
G1
Y1
X1
7 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
DDTCxxxxLP (R1
R2 Series)
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
8 of 8
January 2016
© Diodes Incorporated
DDTCxxxxLP (R1
R2 Series)
Document number: DS30755 Rev. 8 – 2
