Diodes-Incorporated-DMB53D0UV-7
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DMB53D0UV
N-CHANNEL ENHANCEMENT MODE MOSFET PLUS NPN TRANSISTOR
Features
Mechanical Data
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input
Capacitance
Fast Switching Speed
Case: SOT563
Case Material:
Molded Plastic, “Green” Molding
Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Low Input/Output
Leakage
Ultra-Small Surface Mount Package
ESD Protected MOSFET Gate up to 2kV
Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
“Green” Device (Note 2)
For automotive applications requiring specific change
control (i.e.: parts qualified to AEC-Q101, PPAP capable, and
manufactured in IATF 16949 certified facilities), please refer
to the related automotive grade (Q-suffix) part. A listing can
be found at
This part is qualified to JEDEC standards (as references in
AEC-Q101) for High Reliability.
D
2
B
E
SOT563
Q
1
Q
2
G
2
S
2
C
Top View
Internal Schematic
Bottom View
Top View
ESD PROTECTED TO 2kV
Ordering Information
(Note 3)
Part Number
DMB53D0UV-7
DMB53D0UV-13
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
Marking Information
MB1 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
MB1
YM
Date Code Key
Year
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2019
© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
DMB53D0UV
Maximum Ratings
–
MOSFET, Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
DSS
V
GSS
I
D
Value
50
Units
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 4)
V
12
160
560
Continuous
mA
mA
Pulsed Drain Current (Note 4)
I
DM
Maximum Ratings – NPN Transistor, Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
45
V
6.0
V
100
mA
Thermal Characteristics, Total Device
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 1)
Symbol
P
D
Value
250
Unit
mW
C/W
C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
500
R
JA
-55 to +150
T
J
, T
STG
Electrical Characteristics – MOSFET
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
50
V
10
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
A
A
V
DS
= 50V, V
GS
= 0V
V
GS
=
8V, V
DS
= 0V
V
GS
=
12V, V
DS
= 0V
1.0
5.0
Gate-Body Leakage
I
GSS
A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
0.7
0.8
3.1
4
1.0
4
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
V
GS
= 4V, I
D
= 100mA
V
GS
= 2.5V, I
D
= 80mA
Static Drain-Source On-Resistance
R
DS (ON)
5
V
DS
= 10V, I
D
= 100mA,
f = 1.0KHz
Forward Transconductance
180
ms
g
FS
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
25
5
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
2.1
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
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October 2019
© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
DMB53D0UV
Electrical Characteristics – NPN Transistor
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
Min
50
45
6
200
Typ
—
—
—
290
Max
—
—
—
450
Unit
V
V
V
—
Test Condition
I
C
= 10
A, I
B
= 0
I
C
= 10mA, I
B
= 0
I
E
= 1
A, I
C
= 0
(Note 5)
(Note 5)
(Note 5)
(Note 5)
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= +150°C
V
CE
= 45V
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
100
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
(Note 5)
(Note 5)
(Note 5)
—
—
—
mV
mV
mV
V
CE(SAT)
V
BE(SAT)
V
BE
700
900
—
580
—
660
—
700
770
I
CBO
I
CBO
I
CES
15
5.0
nA
µA
Collector-Cutoff Current
Collector-Emitter Cut-Off Current
Gain Bandwidth Product
Output Capacitance
(Note 5)
(Note 5)
—
—
—
—
—
—
—
100
nA
MHz
pF
100
—
—
f
T
4.5
10
C
OBO
NF
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, R
S
= 2.0k
f = 1.0kHz, BW
= 200Hz
Noise Figure
—
dB
MOSFET
0.8
0.5
0.4
V
= 10V
GS
V
= 10V
0.7
DS
T
= 85
V
V
V
= 4.5V
T
A
= 85°C
0.6
0.5
GS
GS
GS
T
A
= 25°C
T =
150°C
A
T
A
= -55°C
0.3
0.2
= 3.0V
= 2.5V
T
A
= 125°C
0.4
0.3
0.2
0.1
0
0.1
0
V
= 1.5V
= 1.0V
GS
V
GS
0
1
2
3
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
10
10
T
A
= 150°C
T
= 125°C
A
T =
85°C
A
V
= 2.5V
GS
V
T =
25°C
A
= 4.0V
GS
T
A
= -55°C
1
1
0.001
0.01
0.1
1
0
0.1
0.2
0.3
0.4
0.5
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
Fig. 4
Typical Drain-Source On-Resistance
vs. Drain Current and
T
e
mperature
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
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© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
DMB53D0UV
2.0
1.8
35
30
25
20
15
10
5
V
= 4V
GS
= 100mA
1.6
1.4
1.2
1.0
0.8
I
D
C
iss
V
I
= 2.5V
GS
= 80mA
D
f = 1MHz
V
= 0V
GS
C
oss
0.6
0.4
C
rss
0
-50 -25
T
J
, JUNCTION TEMPERATURE
Fig. 5 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
0
5
10
15
20
25
30
35
40
(°C )
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
1
1.1
1.0
0.1
0.9
0.8
I
D
=
2
50
A
T =
150°C
A
T
A
= 125°C
0.01
0.001
T
A
= 85°C
0.7
0.6
0.5
T
A
= 25°C
A
T
T
A
= -55°C
0.0001
-50 -25
0
25
50
75 100
125 150
(°C )
0.1
0.3
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
0.5
0.7
0.9
1.1
T
A
, AMBIENT TEMPERATURE
Fig. 7 Gate Threshold Variation vs. Ambient
T
emperature
300
250
200
150
100
50
0
R
= 500
C/W
JA
-50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 9 Derating Curve –
T
o
tal Package Power Dissipation
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© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
DMB53D0UV
NPN Transistor
1,000
0.4
0.3
T
= 150°C
A
I
I
C
B
= 20
T
= 25°C
A
100
10
T
= -50°C
A
0.2
T
A
= 25°C
T
A
= 150°C
0.1
0
T
A
= -50°C
1
1
1,000
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
1,000
0.1
1
10
100
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 11 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
V
= 5V
CE
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Fig. 12 Typical Gain-Bandwidth Product
vs. Collector Current
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© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
DMB53D0UV
Package Outline Dimensions
A
SOT563
Dim Min
Max Typ
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
D
–
–
0.50
G
H
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
M
K
M
All Dimensions in mm
L
Suggested Pad Layout
C2
C2
Dimensions Value
(in mm)
Z
G
2.2
1.2
X
Y
C1
C2
0.375
0.5
1.7
C1
G
Y
Z
0.5
X
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© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
DMB53D0UV
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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October 2019
© Diodes Incorporated
DMB53D0UV
Document number: DS31651 Rev. 8 – 2
