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DMC1028UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
I
D
max
T
A
= +25°C
Device
BV
DSS
R
DS(ON)
max
Low Input Capacitance
Low Profile, 0.6mm Max Height
6.0A
5.5A
5.3A
-3.4A
-3.2A
-3.0A
25m
Ω @ V
GS
= 4.5V
30m
Ω @ V
GS
= 3.3V
32m
Ω @ V
GS
= 2.5V
80m
Ω
@ V
GS
= -4.5V
90m
Ω @ V
GS
= -3.3V
100m
Ω @ V
GS
= -2.5V
Q1
N-Channel
12V
ESD HBM Protected up to 1.5kV, MM Protected up to 150V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Q2
P-Channel
-20V
Mechanical Data
Description
Case: U-DFN2020-6
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Applications
e4
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Optimized for Point of Load (POL) Synchronous Buck Converter that
steps down from 3.3V to 1V for core voltage supply to ASICs. Target
applications are Ethernet Network Controllers used in:
Routers, Switchers, Network Interface Controllers (NICs)
Digital Subscriber Line (DSL)
Set-Top Boxes (STBs)
U-DFN2020-6 (Type B)
S2
D2
S2
D1
S1
G2
D2
D1
G2
G1
D1
D2
G1
ESD PROTECTED
S1
Gate Protection
Diode
Gate Protection
Diode
Pin1
Bottom View
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMC1028UFDB
-7
DMC1028UFDB
-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Marking Information
Site 1
D8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
D8
M = Month (ex: 9 = September)
Date Code Key
Year
2014
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
B
…
H
I
J
K
L
M
N
O
P
R
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Site 2
D8 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
D8
Date Code Key
Year
2014
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
4
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
2 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Q1
Q2
Characteristic
Symbol
Unit
N-CHANNEL P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
12
±8
-20
±8
V
V
V
DSS
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
6.0
4.8
-3.4
-2.7
A
A
Continuous Drain Current (Note 5)
N-Channel: V
GS
= 4.5V
P-Channel: V
GS
= -4.5V
I
D
I
D
7.1
5.7
-4.0
-3.2
t < 5s
-1.4
-20
-12
7.5
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current L = 0.1mH
1.4
40
A
A
I
S
I
DM
I
AS
12
A
Avalanche Energy L = 0.1mH
8.4
mJ
E
AS
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Steady State
1.36
1.89
92
66
19
Total Power Dissipation (Note 5)
W
P
D
t < 5s
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 5)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
R
θ
JC
-55 to +150
T
J,
T
STG
Note:
5.
Device mounted on 1”
1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
Electrical Characteristics Q1 N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
1.0
±10
12
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 12V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
μA
μA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.4
—
—
—
—
—
—
17
19
21
30
0.7
1
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 5.2A
V
GS
= 3.3V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.8A
V
GS
= 1.8V, I
D
= 2.5A
V
GS
= 0V, I
S
= 1A
25
30
32
40
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
787
203
177
4.8
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
7.9
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 3.3V)
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8V)
Gate-Source Charge
10.5
18.5
1.2
Q
g
V
DS
= 6V, I
D
= 6.8A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
2.9
Turn-On Delay Time
4.6
Turn-On Rise Time
9.4
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.1
Ω, R
G
= 1
Ω
Turn-Off Delay Time
15.7
3.7
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.0
1.8
t
RR
I
S
= 5.4A, dI/dt = 100A/
μ
s
I
S
= 5.4A, dI/dt = 100A/
μ
s
Q
RR
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
3 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Electrical Characteristics Q2 P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
-1.0
±10
μA
μA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.4
—
—
55
-1
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -3.8A
V
GS
= -3.3V, I
D
= -3.5A
V
GS
= -2.5V, I
D
= -3.3A
V
GS
= -1.8V, I
D
= -1.0A
V
GS
= -1.5V, I
D
= -0.5A
V
GS
= 0V, I
S
= -1A
80
—
63
90
—
Static Drain-Source On-Resistance
70
100
140
210
-1.2
—
88
—
110
-0.7
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
576
87
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
71
15
V
DS
= 0V, V
GS
= 0V, f = 1MHz
5.2
6.7
11.5
1.0
2.0
3.5
3.6
20.8
12.7
13.1
3.9
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -3.3V)
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Q
g
V
DS
= -10V, I
D
= -4.9A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 2.6
Ω, R
G
= 1
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
RR
I
S
= -3.9A, dI/dt = 100A/
μ
s
I
S
= -3.9A, dI/dt = 100A/
μ
s
Q
RR
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
4 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Typical Characteristics – N-CHANNEL
15
12
9
20.0
V
DS
= 5V
V
GS
= 1.8V
18.0
16.0
14.0
12.0
10.0
8.0
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
= 3.0V
T
A
= 125
o
C
V
GS
= 2.5V
T
A
= -55
o
C
V
GS
= 1.5V
V
GS
= 2.0V
6
6.0
T
A
= 25
o
C
T
A
= 85
o
C
T
A
= 150
o
C
4.0
3
V
GS
= 1.2V
V
GS
= 1.1V
2.0
0.0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
0.05
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.045
0.04
V
= 1
.
8
V
GS
0.035
0.03
V
= 2
.
5
V
0.025
0.02
GS
I
D
= 2.5A
I
D
= 4.8A
I
D
= 5.2A
0.015
0.01
V
= 3
.
3
V
GS
V
= 4
.
5
V
GS
0.005
0
0
2
4
6
8
10 12 14 16 18 20
1
2
3
4
5
6
7
8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
0.03
0.025
0.02
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V
T
A
= 125
o
C
T
A
= 150
o
C
V
GS
= 4.5V, I
D
= 10A
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
0.015
0.01
V
GS
= 1.8V, I
D
= 3A
0.8
0.6
0.005
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs. Drain Current
and Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6 On-Resistance Variation with
Temperature
5 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Typical Characteristics – N-CHANNEL
(continued)
0.05
0.045
0.04
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 1.8V, I
D
= 3A
0.035
I
D
= 1mA
0.03
0.025
0.02
I
D
= 250µA
0.015
V
GS
= 4.5V, I
D
= 10A
0.01
0.005
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
10000
1000
100
f = 1MHz
V
GS
= 0V
C
iss
T
A
= 125
o
C
C
oss
T
A
= -55
o
C
C
rss
T
A
= 25
o
C
T
A
= 150
o
C
6
4
T
A
= 85
o
C
1.2
2
0
10
0
0.3
0.6
0.9
1.5
0
2
4
6
8
10
12
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
8
6
4
2
0
100
10
R
DS(ON)
Limited
DC
1
P
W
=10s
P
W
=1s
T
J(Max)
= 150
℃
T
A
= 25
℃
V
GS
= 4.5V
Single Pulse
DUT on 1*MRP
Board
V
DS
= 6V, I
D
= 6.8A
P
W
=100ms
0.1
0.01
P
W
=10ms
P
W
=1ms
P
W
=100µs
0
2
4
6
8
10 12 14 16 18 20
Q
g
(nC)
Fiure 11 Gate Charge
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
6 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Typical Characteristics – P-CHANNEL
20.0
10
8
V
GS
= -4.5V
V
GS
= -3.0V
18.0
16.0
14.0
12.0
10.0
8.0
V
DS
= -5V
V
GS
= -3.5V
V
GS
= -2.5V
V
GS
= -2.0V
6
V
GS
= -1.8V
4
T
A
= 125
o
C
T
A
= 150
o
C
6.0
V
GS
= -1.5V
V
GS
= -1.2V
T
A
= -55
o
C
2
4.0
T
A
= 25
o
C
T
A
= 85
o
C
2.0
0
0.0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristic
Figure 14 Typical Transfer Characteristic
0.3
0.25
0.2
0.3
0.25
0.2
V
= -1.5V
GS
I
D
= -3.8A
I
D
= -3.3A
V
= -1.8V
GS
0.15
0.1
0.15
0.1
V
= -2.5V
GS
I
D
= -1.0A
0.05
0
0.05
0
V
= -4.5V
V
= -3.3V
GS
GS
1
3
5
7
9
11 13 15 17 19 21
0
2
4
6
8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 15
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 16 Typical Transfer Characteristic
1.8
1.6
1.4
1.2
1
0.12
0.1
V
GS
= -4.5V
T
A
= 125
o
C
T
A
= 150
o
C
V
GS
= -4.5V, I
D
= -5.0A
0.08
0.06
0.04
0.02
T
A
= 85
o
C
T
A
= 25
o
C
V
GS
= -1.8V, I
D
= -1.0A
T
A
= -55
o
C
0.8
0.6
-50 -25
0
25
50
75 100
125 150
1
3
5
7
9
11 13 15 17 19 21
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 17 Typical On-Resistance vs. Drain Current
and Temperature
Figure 18 On-Resistance Variation with
Temperature
7 of 11
February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Typical Characteristics – P-CHANNEL
(continued)
0.14
1
0.8
0.6
0.4
0.2
0
0.12
V
GS
= -1.8V, I
D
= -1.0A
0.1
I
D
= -1mA
0.08
0.06
I
D
= -250µA
0.04
V
GS
= -4.5V, I
D
= -5.0A
0.02
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 19 On-Resistance Variation with
Temperature
Figure 20 Gate Threshold Variation vs. Junction
Temperature
10000
1000
100
20
18
16
14
12
10
8
f = 1MHz
V
GS
= 0V
C
iss
T
A
= 150
o
C
T
A
= 125
o
C
C
oss
6
T
A
= 25
o
C
T
A
= 85
o
C
C
rss
4
2
T
A
= -55
o
C
10
0
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 22 Typical Junction Capacitance
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current
8
6
4
2
0
100
10
R
DS(ON)
Limited
1
DC
P
W
=10s
T
J(Max)
= 150
℃
P
W
=1s
P
W
=100ms
T
A
= 25
℃
V
GS
= -4.5V
Single Pulse
DUT on 1*MRP
Board
V
DS
= -10V, I
D
= -4.9A
0.1
0.01
P
W
=10ms
P
W
=1ms
P
W
=100µs
10
0.1
1
100
0
2
4
6
8
10
12
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 24 SOA, Safe Operation Area
Q
g
(nC)
Figure 23 Gate Charge
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© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
0.001
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=166
℃
/W
Duty Cycle, D=t1/t2
D=Single Pulse
0.0001
1E-05
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 25 Transient Thermal Resistance
Typical Application Circuit
DMC1028UFDB is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to 1V with a load current up to 3A. This
is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. The control
switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to 1V step down, which has a duty cycle
of 33%. This means that for 67% of the cycle, the synchronous switch (Q1) is on and efficiency is dominated by the conduction losses; hence, the
need for low R
DS(ON)
N-channel MOSFETs. Whereas for the control switch (Q2), the gate charge needs to be minimized as the switching losses
become significant.
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DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
U-DFN2020-6
Type B
Min Max Typ
0.545 0.605 0.575
0.00 0.05 0.02
Seating Plane
Dim
A
A1
A3
b
D
D2
e
D
–
–
0.13
D2
D2
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
R
0
.150
–
–
0.65
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
z1
–
–
0.45
E
E2
z1
L
0.25 0.35 0.30
k
z
z1
–
–
–
–
0.225
0.175
All Dimensions in mm
L
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1(2x)
Y1(2x)
Y2
G
Y
G1
X
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February 2020
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
DMC1028UFDB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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DMC1028UFDB
Document number: DS37634
Rev. 5 – 2
