Diodes-Incorporated-DMC2004DWK-7
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DMC2004DWK
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage V
GS(th)
<
1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
ESD Protected Gate
•
•
Case: SOT-363
Case Material:
Molded Plastic.
UL Flammability Classification
Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 7
Ordering & Date Code Information: See Page 7
Weight: 0.006 grams (approximate)
•
•
•
•
•
•
•
“Green” Device (Note 3)
SOT-363
D
1
G
2
S
2
Q
2
Q
1
ESD protected
S
1
G
1
D
2
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings N-CHANNEL – Q
1
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
20
Unit
Drain Source Voltage
Gate-Source Voltage
V
V
V
DSS
V
GSS
±
8
T
A
= 25°C
T
A
= 85°C
540
390
Drain Current (Note 1)
mA
I
D
Maximum Ratings P-CHANNEL – Q
2
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
-20
Unit
Drain Source Voltage
Gate-Source Voltage
V
V
V
DSS
V
GSS
±
8
T
A
= 25°C
T
A
= 85°C
-430
-310
Drain Current (Note 1)
mA
I
D
Thermal Characteristics – Total Device
@T
A
= 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Symbol
Value
250
Unit
mW
°
C/W
°
C
P
d
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
500
R
θ
JA
-65 to +150
T
j
, T
STG
Notes:
1. Device
mounted on FR-4 PCB.
2. No
purposefully added lead.
3. Diodes
Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
1 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
Electrical Characteristics N-CHANNEL – Q
1
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
20
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
1
V
GS
= 0V, I
D
= 10
μ
A
DS
= 16V, V
GS
= 0V
GS
= ±4.5V, V
DS
= 0V
μ
A
μ
A
V
V
I
GSS
±
1
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
0.5
1.0
V
V
GS(th)
⎯
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
⎯
⎯
⎯
0.4
0.5
0.7
0.55
0.70
0.90
Static Drain-Source On-Resistance
R
DS (ON)
Ω
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
200
0.5
mS
V
|Y
fs
|
V
SD
⎯
⎯
⎯
1.2
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
DS
= 16V, V
GS
= 0V
150
25
pF
pF
pF
C
iss
C
oss
C
rss
⎯
⎯
⎯
⎯
⎯
⎯
V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
20
Electrical Characteristics P-CHANNEL – Q
2
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
GS
= 0V, I
D
= -250
μ
A
DS
= -20V, V
GS
= 0V
GS
= ±4.5V, V
DS
= 0V
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-20
⎯
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
-1.0
V
V
V
μ
A
μ
A
I
GSS
±
1.0
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
-0.5
-1.0
V
V
GS(th)
⎯
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
0.7
1.1
1.7
0.9
1.4
2.0
Static Drain-Source On-Resistance
R
DS (ON)
⎯
Ω
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
200
-0.5
mS
V
|Y
fs
|
V
SD
⎯
⎯
⎯
-1.2
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= -115mA
DS
= -16V, V
GS
= 0V
175
30
pF
pF
pF
C
iss
C
oss
C
rss
⎯
⎯
⎯
⎯
⎯
⎯
V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
20
Notes:
4. Short
duration pulse test used to minimize self-heating effect.
2 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
Q
1,
N-CHANNEL
0
0
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristics
V
DS
, DRAIN SOURCE VOL
T
A
GE (V)
Fig. 1
Typical Output Characteristics
I
D
, DRAIN CURRENT (A)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4
Static Drain-Source On-Resistance vs.
Drain Current
Fig. 3
Gate Threshold Voltage vs.
Ambient
T
emperature
10
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 5
Static Drain-Source On-Resistance vs.
Drain Current
Fig. 6
Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
3 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
Q
1,
N-CHANNEL, continued
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7
Static Drain-Source On-State Resistance
vs. Ambient
T
emperature
V
SD
, DRAIN-SOURCE VOLTAGE (V)
Fig. 8
Reverse Drain Current vs. Source-Drain Voltage
I
D
, DRAIN CURRENT (A)
Fig. 9
Forward Transfer Admittance vs.
Drain Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10
Typical Capacitance
4 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
Q
2,
P-CHANNEL
0
0
-V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 12
Typical Transfer Characteristics
-V
DS
, DRAIN SOURCE VOLTAGE (V)
Fig. 11
Typical Output Characteristics
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 14
Static Drain-Source On-Resistance vs.
Drain Current
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 13
Gate Threshold Voltage vs.
Ambient
T
emperature
10
-I
D
, DRAIN-SOURCE CURRENT (A)
-I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 16
Static Drain-Source On-Resistance vs.
Drain-Source Current vs. Gate Source Voltage
Fig. 15
Static Drain-Source On-Resistance vs.
Drain Current
5 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
Q
2,
P-CHANNEL, Continued
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 17
Static Drain-Source On-State Resistance
vs. Ambient
T
emperature
-V
DS
, SOURCE-DRAIN VOLTAGE (V)
Fig. 18
Reverse Drain Current vs. Source-Drain Voltage
-I
D
, DRAIN CURRENT (A)
Fig. 19
Forward Transfer Admittance vs. Drain Current
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 20
Typical Capacitance
6 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
Ordering Information
(Note 5)
Part Number
Case
Packaging
DMC2004DWK-7
SOT-363
3000/Tape & Reel
Notes:
Marking Information
CAB = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
CAB
Date Code Key
Year
2007
2008
2009
2010
2011
2012
Code
U
V
W
X
Y
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-363
Min
0.10
1.15
2.00
Dim
Max
0.30
1.35
2.20
A
B
C
D
F
H
J
K
L
B
C
0.65 Nominal
0.30
1.80
⎯
0.90
0.25
0.10
0
°
0.40
2.20
0.10
1.00
0.40
0.25
8°
H
K
J
M
M
L
D
F
α
All Dimensions in mm
Suggested Pad Layout
E
E
Dimensions Value
(in mm)
Z
G
X
Y
C
E
2.5
1.3
0.42
0.6
1.9
0.65
C
G
Z
Y
X
7 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
DMC2004DWK
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
8 of 8
September 2007
© Diodes Incorporated
DMC2004DWK
Document number: DS31114 Rev. 4 – 2
