Diodes-Incorporated-DMC2053UFDBQ-7
| Part # | Diodes-Incorporated-DMC2053UFDBQ-7 |
Download  | Diodes-Incorporated-DMC2053UFDBQ-7 |
DMC2053UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
PCB Footprint of 4mm
2
I
D
Max
Device
BV
DSS
20V
R
DS(ON)
Max
Low On-Resistance
T
A
= +25°C
Low Input Capacitance
4.6A
4.1A
-3.1A
-2.6A
35m
Ω @ V
GS
= 4.5V
43m
Ω @ V
GS
= 2.5V
75m
Ω
@ V
GS
= -4.5V
110m
Ω @ V
GS
= -2.5V
Q1
N-Channel
Low Profile, 0.6mm Maximum Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-
Free. “Green” Device (Note 3)
The
DMC2053UFDBQ
is suitable for automotive applications
requiring specific change control; This part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949
certified facilities.
Q2
P-Channel
-20V
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, which makes
it ideal for high-efficiency power management applications.
Package: U-DFN2020-6
Package
Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Lead-Frame.
Load switches
e4
Power management functions
Portable power adaptors
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
D1
D2
S2
G2
D2
D1
G1
D1
G2
D2
G1
S1
S1
S2
Pin1
N-Channel MOSFET
P-Channel MOSFET
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Packing
Part Number
Package
Qty.
3,000
10,000
Carrier
Tape & Reel
Tape & Reel
DMC2053UFDBQ
-7
DMC2053UFDBQ
-13
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900
ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
1 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
Marking Information
U-DFN2020-6 (Type B)
H4 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 3 = 2023)
H4
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
YWX
Date Code Key
Year
2020
–
2023
2024
2025
2026
2027
2028
2029
2030
2031
2032
Code
0
–
3
4
5
6
7
8
9
0
1
2
Week
Code
1-26
27-52
53
A-Z
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
2 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
Maximum Ratings
(@ T
A
= +25°C, unless otherwise specified.)
Q1
Q2
Characteristic
Symbol
Unit
N-CHANNEL P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
V
V
V
DSS
V
GSS
20
-20
±12
±12
Steady
State
4.6
3.7
T
A
= +25°C
T
A
= +70°C
-3.1
-2.5
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
1.1
-1.05
-15
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
A
A
I
S
24
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
0.82
153
Unit
W
°C/W
W
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
R
ϴ
JA
P
D
1.14
T
A
= +25°C
Steady State
110
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics Q1 N-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
24
30
44
0.7
1.0
35
V
mΩ
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 5A
V
GS
= 2.5V, I
D
= 4A
V
GS
= 1.8V, I
D
= 2A
V
GS
= 0V, I
S
= 1A
Static Drain-Source On-Resistance
43
56
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–
369
54
—
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
32
Reverse Transfer Capacitance
Gate Resistance
4.1
3.6
7.7
0.4
1.0
2.6
3.0
12.5
3.6
6.0
0.9
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DS
= 10V, I
D
= 6A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= 10V, V
GS
= 4.5V,
R
g
= 6
Ω
, R
L
= 10
Ω
, I
D
= 6A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 1A, di/dt = 100A/
μ
s
I
F
= 1A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
3 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
10
8
20
15
V
V
= 3V
V
= 2
.
5
V
GS
V
GS
V
= 5V
DS
= 3
.
5
V
GS
= 4V
GS
V
= 4
.
5
V
GS
V
= 2V
GS
6
4
10
V
= 1
.
8
V
GS
T
= 85°C
= 25°C
A
T
= 125°C
A
V
= 1
.
4
V
GS
T
A
A
V
= 1
.
3
V
5
0
GS
T
= 150°C
A
V
= 1
.
5
V
2
0
GS
T
= -55°C
0
0.5
1
1.5
2
2.5
3
0
1
2
3
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
Figure 1
T
y
pical Output Characteristic
0.07
0.06
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
I
= 4A
D
I
= 5A
D
V
= 1
.
8
V
GS
0.05
0.04
V
= 2
.
5
V
GS
I
= 2A
D
V
= 4
.
5
V
GS
0.03
0.02
0.01
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.06
0.05
1.8
1.6
1.4
1.2
V
= 4
.
5
V
GS
V
I
= 2
.
5
V
GS
= 4A
D
T
= 150°C
= 125°C
A
V
I
= 4
.
5
V
T
GS
A
= 5A
D
T
= 85°C
A
0.04
0.03
0.02
T
= 25°C
A
T
= -55°C
A
V
I
= 1
.
8
V
GS
= 2A
D
1
0.01
0
0.8
0.6
0
1
2
3
4
5
6
7
8
9
10
–
5
0
–
2
5
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE
(
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
4 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1.5
V
= 1
.
8
V
= 2A
GS
I
D
1
I
= 1mA
D
I
= 250µA
D
V
= 2
.
5
V
= 4A
GS
I
D
V
= 4
.
5
V
= 5A
GS
0.5
I
D
0.01
0
0
–
5
0
–
2
5
–
5
0
–
2
5
0
25
50
75 100 125
150
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
10
9
1000
f = 1MHz
8
7
C
iss
T
= 125°C
A
6
5
4
T
T
= 85°C
= 25°C
A
A
100
T
= 150°C
A
C
o
s
s
3
2
T
= -55°C
A
C
r
s
s
1
0
10
0
4
8
12
16
20
0
0.3
0.6
0.9
1.2
1.5
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 10
T
y
pical Junction Capacitance
V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
10
8
100
V
= 10V
DS
P
= 100µs
P
W
I
= 6A
D
= 1ms
W
10
P
= 10ms
W
6
DC
1
4
P
= 10s
W
P
= 1s
W
0.1
2
0
T
T
V
= 150°C
J
(
m
a
x
)
P
= 100ms
W
= 25°C
= 4
.
5
V
C
GS
Single Pulse
DUT on 1*MRP Board
0.01
0
2
4
6
8
0.1
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
5 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
D = Single Pulse
R
(t) = r(t) * R
J
A
J
A
R
= 151
.
2
°C
/
W
J
A
Du
t
y
C
ycle, D = t1/ t2
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000
1000000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
6 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
Electrical Characteristics Q2 P-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
-1.0
±100
μA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.45
—
—
57
-1.0
75
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -2.5V, I
D
= -3.0A
V
GS
= -1.8V, I
D
= -2.0A
V
GS
= 0V, I
S
= -1.0A
73
Static Drain-Source On-Resistance
—
110
168
-1.2
105
-0.7
—
Diode Forward Voltage
—
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
440
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
48
Reverse Transfer Capacitance
Gate Resistance
8.5
5.9
12.7
0.6
2.1
3.2
7.8
31
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -4V, I
D
= -3.5A
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -8V)
Gate-Source Charge
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= -4V, V
GS
= -4.5V,
R
L
= 4
Ω, R
g
= 6
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
18
Turn-Off Fall Time
10.5
3.0
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t
RR
I
S
= -2.0A, dI/dt = 100A/
μ
s
I
S
= -2.0A, dI/dt = 100A/
μ
s
Q
RR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
7 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
10
8
10
8
V
V
= -4.0V
= -4.5V
GS
V
= -2.5V
GS
V
= -5.0V
DS
GS
V
= -3.0V
GS
V
= -3.5V
GS
V
= -2.0V
GS
6
6
4
T =
85°C
A
V
= -1.8V
GS
T
= 125°C
A
T
= 25°C
A
T
= 150°C
4
2
0
A
T
= -55°C
A
2
0
V
= -1.5V
GS
V
V
= -1.4V
= -1.3V
GS
GS
0
0.5
1
1.5
2
2.5
3
0
1
2
3
-V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
-V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
Figure 14 Typical Output Characteristics
T
y
pical Transfer Characteristics
Figure 15
0.14
0.2
V
= -1.8V
0.11
0.08
0.15
0.1
GS
V
V
= -2.5V
= -4.5V
I
= -3A
GS
D
I
= -3.5A
D
I
= -2A
GS
D
0.05
0
0.05
0.02
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
-I
D
, DRAIN SOURCE CURRENT (A)
-V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 3
T
y
pical On-Resistance vs.
Drain Current and Gate Voltage
F
Figure 16 Typical On-Resistance vs.
Figure 17 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0.12
0.11
1.8
1.6
1.4
V
= -4.5V
GS
V
I
= -4.5V
GS
0.1
T
T
= 150°C
= 125°C
A
A
= -3.5A
D
0.09
0.08
0.07
0.06
0.05
0.04
V
I
= -2.5V
GS
= -3A
T
= 85°C
= 25°C
D
A
A
T
T
V
I
= -1.8V
1.2
1
GS
= -2A
D
= -55°C
A
0.03
0.02
0.01
0
0.8
0.6
0
1
2
3
4
5
6
7
8
9
10
–
5
0
–
2
5
0
25
50
75
100 125 150
–
I
D
,
DRAIN SOURCE CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 19
Figure 18 Typical On-Resistance vs. Drain
urr
e
e
m
er
On-Resistance Variation with
T
e
m
p
e
r
a
ture
March 2023
C
nt
a
n
d
T
p
a
t
u
r
e
8 of 11
DMC2053UFDBQ
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
0.16
0.14
1.5
0.12
0.1
V
I
= -1.8V
GS
= -2A
1
D
V
I
= -2.5V
GS
= -3A
-I =
250µA
D
-I =
1mA
D
0.08
0.06
D
V
I
= -4.5V
GS
= -3.5A
0.5
0
D
0.04
0.02
0
–
5
0
–
2
5
0
25
50
75 100
125 150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 21
Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
Figure 20
On-Resistance Variation with
T
e
m
p
e
r
a
ture
10
9
1000
f = 1MHz
8
C
iss
7
6
5
4
100
T =
125°C
A
T =
85°C
A
C
o
s
s
T =
150°C
A
T =
25°C
A
3
2
C
r
s
s
T =
-55°C
A
1
0
10
0
0.3
0.6
0.9
1.2
1.5
0
4
8
12
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
16
20
-V
SD
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
Figure 23 Typical Junction Capacitance
Figure 22 Diodes Forward Voltage vs. Current
10
8
100
10
R
D
S
(
on)
Limi
t
e
d
P
= 10ms
W
V
I
= -15V
P
= 1ms
DS
W
= -6A
P
= 100µs
D
W
6
4
DC
= 10s
1
P
W
P
= 1s
W
0.1
T
= 150°C
P
= 100ms
T
J
(
M
A
X
)
= 150°C
W
2
0
T
C
= 25°C
V
GS
= -4.5V
Single Pulse
DUT On 1*MRP Board
0.01
0
2
4
6
8
10 12 14 16 18
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 25 SOA, Safe Operation Area
Figure 24 Gate Charge
9 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
A
S
e
a
t
ing
P
l
ane
U-DFN2020-6
Type B
Min Max Typ
0.545 0.605 0.575
0.00 0.05 0.02
Dim
A
A1
A3
b
D
D2
e
D
D2
D2
–
–
0.13
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
R
0
.
1
5
0
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1( 2x)
Y1
Y
1
( 2x)
Y2
Y2
G
Y
G1
X
10 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
DMC2053UFDBQ
IMPORTANT NOTICE
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH
1.
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY
RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
Th
e Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes’
products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who d
esign with Diodes’
products. Diodes’ products may be used to facilitate safety
-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for
their intended applications,
(c) ensuring their applications, which incorpo
rate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and
functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control
techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their
applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or o
n Diodes’ websites, harmless against all damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose pr
oducts and services may be described in this document or on Diodes’ website) under this document.
5.
Diodes’
products
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa
le is
prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any
applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
9. This Notice may be periodically updated with the most recent version available at
https://www.diodes.com/about/company/terms-and-
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
11 of 11
March 2023
© 2023 Copyright Diodes Incorporated. All Rights Reserved.
DMC2053UFDBQ
Document number: DS42659 Rev. 3 – 2
