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DMC2053UVTQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
BV
DSS
20V
R
DS(ON) MAX
Device
Low Input Capacitance
T
A
= +25°C
Fast Switching Speed
35m
Ω
@ V
GS
= 4.5V
43m
Ω
@ V
GS
= 2.5V
74m
Ω
@ V
GS
= -4.5V
110m
Ω
@ V
GS
= -2.5V
4.6A
4.2A
-3.2A
-2.7A
Low Input/Output Leakage
N-Channel
P-Channel
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony
Free. “Green” Device (Note 3)
The DMC2053UVTQ is suitable for automotive applications
requiring specific change control and is AEC-Q101 qualified,
is PPAP capable, and is manufactured in IATF16949:2016
certified facilities.
-20V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Applications
Backlighting
DC-DC Converters
Power Management Functions
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
TSOT26
D1
D2
G1
S2
G2
1
2
3
6
5
4
D1
S1
D2
G2
G1
Top View
Top View
S2
S1
Q1 N-Channel MOSFET
Q2 P-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC2053UVTQ-7
DMC2053UVTQ-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
AR2 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
Code
G
H
I
J
K
L
M
N
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Q1 Value
20
Q2 Value
-20
Unit
V
Gate-Source Voltage
±12
±12
V
V
GSS
Continuous Drain Current (Note 6)
N-Channel: V
GS
= 4.5V
P-Channel: V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
4.6
3.7
-3.2
-2.6
A
I
D
1.4
22
-1.3
-20
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
I
S
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
0.7
173
Unit
W
T
A
= +25°C
Steady State
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
1.1
T
A
= +25°C
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
108
R
JA
°C/W
°C
37
R
JC
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics Q1 N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1.0
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
µA
nA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.4
—
—
—
1.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.0A
V
GS
= 1.8V, I
D
= 2.0A
V
GS
= 0V, I
S
= 1A
35
43
56
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
0.7
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
369
54
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Ω
32
Reverse Transfer Capacitance
Gate Resistance
4.1
3.6
0.4
1.0
2.6
3.0
12.5
3.6
6.0
0.9
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 10V, I
D
= 6A
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= 10V, V
GS
= 5V,
R
G
= 6
, I
D
= 6A
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 1A, di/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Electrical Characteristics Q2 P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
-1.0
±100
µA
nA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.45
—
—
—
-1.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -2.5V, I
D
= -3.0A
V
GS
= -1.8V, I
D
= -2.0A
V
GS
= 0V, I
S
= -1A
74
110
168
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
-0.8
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
440
60
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Ω
48
Reverse Transfer Capacitance
Gate Resistance
8.5
5.9
0.6
2.1
3.2
7.8
31
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -4V, I
D
= -3.5A
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Q
g
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= -4.5V, V
DS
= -4V,
R
G
= 6
Ω
, R
L
= 4
Ω
ns
Turn-Off Delay Time
t
D(OFF)
t
F
18
Turn-Off Fall Time
10.5
3.0
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= -2.0A, di/dt = -100A/
μ
s
I
F
= -2.0A, di/dt = -100A/
μ
s
nC
Q
RR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
3 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Typical Characteristics – N-CHANNEL
20.0
15
12
9
V
GS
= 2.5V
V
GS
= 3.0V
V
DS
= 5.0V
V
GS
= 2.0V
V
GS
= 3.5V
15.0
10.0
5.0
V
GS
= 4.0V
V
GS
= 4.5V
V
GS
= 10V
6
V
GS
= 1.5V
3
T
J
= 85
℃
T
J
= 150
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 1.2V
2.5
T
J
= 125
℃
0.0
0
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.5
0.4
0.3
0.2
0.1
0
I
D
= 5.0A
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
I
D
= 2.0A
0
2
4
6
8
10
0
3
6
9
12
15
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.0A
T
J
= 150
℃
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 1.8V, I
D
= 2.0A
0.8
0.6
-50 -25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
50
75
100 125 150
0
3
6
9
12
15
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
4 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Typical Characteristics – N-CHANNEL
(continued)
0.1
0.09
0.08
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
V
GS
= 1.8V, I
D
= 2.0A
V
GS
= 2.5V, I
D
= 4.0A
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 1mA
I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 5.0A
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
15
12
9
1000
V
GS
= 0V
f = 1MHz
C
iss
100
C
oss
6
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
C
rss
3
T
J
= 25
o
C
T
J
= -55
o
C
0.9
0
10
100
10
0
0.3
0.6
1.2
0
4
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Junction Capacitance
Figure 9. Diode Forward Voltage vs. Current
10
8
R
DS(ON)
Limited
P
W
= 1ms
P
W
= 100µs
P
W
= 10ms
6
1
P
W
= 100ms
4
T
J(Max)
= 150
℃
T
C
= 25
℃
0.1
0.01
P
W
= 1s
P
W
= 10s
Single Pulse
DUT on 1*MRP
Board
2
V
DS
= 10V, I
D
= 6.0A
DC
10
V
GS
= 4.5V
0
0.1
1
100
0
2
4
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Q
g
(nC)
Figure 11. Gate Charge
5 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Typical Characteristics – P-CHANNEL
15.0
15
12
9
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
V
DS
= -5V
12.0
9.0
6.0
3.0
0.0
V
GS
= -2.0V
V
GS
= -1.8V
6
V
GS
= -1.5V
V
GS
= -1.3V
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
3
T
J
= 125
o
C
T
J
= -55
o
C
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Typical Output Characteristic
Figure 14. Typical Transfer Characteristic
0.12
0.11
0.1
0.3
0.25
0.2
V
GS
= -1.8V
I
D
= -3.5A
0.09
0.08
0.07
0.06
0.05
0.04
V
GS
= -2.5V
0.15
0.1
V
GS
= -4.5V
I
D
= -2.0A
0.05
0
0
3
6
9
12
15
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 16. Typical Transfer Characteristic
Figure 15. Typical On-Resistance vs. Drain Current
and Gate Voltage
0.14
0.12
0.1
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -2.5V, I
D
= -3.0A
V
GS
= -4.5V
T
J
= 150
o
C
T
J
= 125
o
C
0.08
0.06
0.04
0.02
T
J
= 85
o
C
T
J
= 25
o
C
V
GS
= -1.8V, I
D
= -2.0A
0.8
0.6
T
J
= -55
o
C
0
3
6
9
12
15
-50 -25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 17. Typical On-Resistance vs. Drain Current
and Junction Temperature
Figure 18. On-Resistance Variation with Junction
Temperature
6 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Typical Characteristics – P-CHANNEL
(continued)
0.2
0.18
0.16
1
0.8
0.6
0.4
0.2
0
V
GS
= -1.8V, I
D
= -2.0A
V
GS
= -2.5V, I
D
= -3.0A
0.14
0.12
0.1
I
D
= -1mA
I
D
= -250
μ
A
0.08
0.06
0.04
0.02
0
V
GS
= -4.5V, I
D
= -3.5A
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 19. On-Resistance Variation with Junction
Temperature
Figure 20. Gate Threshold Variation vs. Junction
Temperature
15
12
9
1000
V
GS
= 0V
f = 1MHz
C
iss
100
C
oss
6
C
rss
T
J
= 85
o
C
T
J
= 150
o
C
3
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
0
10
0
0.3
0.6
0.9
1.2
1.5
0
4
8
12
16
20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
Figure 22. Typical Junction Capacitance
100
10
8
R
DS(ON)
Limited
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
10
1
6
P
W
= 100ms
4
T
J(Max)
= 150
℃
V
DS
= -15V, I
D
= -6.0A
T
C
= 25
℃
0.1
0.01
P
W
= 1s
P
W
= 10s
Single Pulse
DUT on 1*MRP
Board
2
DC
10
V
GS
= -4.5V
0
0
2
4
6
8
10 12 14 16 18
Q
g
(nC)
Figure 23. Gate Charge
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
7 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 155
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06 1E-05
0.0001 0.001
0.01
0.1
1
10
100
1000 10000
10000
0
1
000000
t1, PULSE DURATION TIME (sec)
Figure 25. Transient Thermal Resistance
8 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
Package Outline Dimensions
TSOT26
D
e1
TSOT26
Min Max
1.00
01( 4x)
Dim
A
Typ
E1/2
A1
A2
D
E
E1
b
0.010 0.100
0.840 0.900
2.800 3.000 2.900
2.800 BSC
1.500 1.700 1.600
E/2
c
E1
E
Gauge Plane
Seating Plane
0
0.300 0.450
0.120 0.200
L
c
e
L2
0.950 BSC
e1
L
L2
θ
1.900 BSC
0.50
0.250 BSC
8°
01( 4x)
e
b
0.30
A2
0°
4°
4°
A1
θ1
12°
A
All Dimensions in mm
Seating Plane
Suggested Pad Layout
TSOT26
C
Dimensions Value
(in mm)
C
X
Y
0.950
0.700
1.000
3.199
Y1
Y1
Y
X
9 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
DMC2053UVTQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
10 of 10
July 2019
© Diodes Incorporated
DMC2053UVTQ
Document number: DS41617
Rev. 2 – 2
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Authorized Distributor
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