Diodes-Incorporated-DMC25D1UVT-7
| Part # | Diodes-Incorporated-DMC25D1UVT-7 |
Download  | Diodes-Incorporated-DMC25D1UVT-7 |
DMC25D1UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
Device
V
(BR)DSS
R
DS(ON)
T
A
= +25°C
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Q1
25V
0.5A
-3.9A
-3.5A
4
Ω
@ V
GS
= 4.5V
55m
Ω
@ V
GS
= -4.5V
70m
Ω
@ V
GS
= -2.5V
Q2
-12V
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimo
ny Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power Management Functions
Load Switch
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.013 grams (Approximate)
D1
D2
S2
Q2
Vin, R1
Vout, C1
TSOT26
4
5
6
3
2
1
ON/OFF
R1, C1
Vout, C1
R2
G1
G2
Q1
Gate Protection
Diode
Gate Protection
Diode
S1
Top View
Top View
Internal circuit
Q2 P-Channel MOSFET
Q1 N-Channel MOSFET
Ordering Information
(Note 4)
Part Number
DMC25D1UVT-7
DMC25D1UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html
for more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
G2
D1
G1
S2
C6D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
C6D
M = Month (ex: 9 = September)
S1
D2
D2
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
Maximum Ratings
–
Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
25
V
V
DSS
-0.5
+8
Gate-Source Voltage
V
V
GSS
0.5
1.2
1.5
A
A
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
I
D
I
S
I
DM
Maximum Ratings
–
Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-12
Unit
V
Gate-Source Voltage
±8
V
V
GSS
Steady State
-3.9
-17.4
-2.82
-40
A
A
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Note 9
I
D
Continuous Drain Current (Note 5) V
GS
= -2.5V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 6)
A
I
S
-40
A
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
1.3
100
5
Unit
W
Power Dissipation (Note 5)
P
D
Steady State
Note 9
Thermal Resistance, Junction to Ambient
(Note 5)
°C/W
R
θJA
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
36
°C/W
°C
R
θJ
C
-55 to +150
T
J
,
T
STG
Electrical Characteristics
–
Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
25
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= 8V, V
DS
= 0V
µA
nA
100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.65
—
—
0.85
3.8
1.5
4
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 0.4A
V
GS
= 0V, I
S
= 0.29A
Static Drain-Source On-Resistance
Diode Forward Voltage
0.76
1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
27.6
8.5
3.3
25
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
0.4
0.9
0.1
0.04
2.5
1.4
5.7
4.3
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
g
nC
ns
V
DS
= 5V,
I
D
= 0.2A
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 4.5V, V
DS
= 6V,
R
G
= 50
Ω
, I
D
= 0.5A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1in. square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Pulse Test: Pulse
Width < 300μs, Duty Cycle < 2.0%.
2 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
Electrical Characteristics
–
Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
-1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
µA
V
DS
= -6.4V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
—
±10
I
GSS
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
-0.35
—
—
—
—
—
—
-1.5
55
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.5A
V
GS
= -1.8V, I
D
= -2.0A
V
GS
= 0V, I
S
= -0.6A
—
Static Drain-Source On-Resistance
70
—
100
-1.2
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
9.7
393
1.9
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= -6V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
1846
24.5
3.3
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -6V, I
D
= -2.8A
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Q
g
nC
Q
gs
Q
gd
t
D(ON)
t
R
7.3
1.2
Turn-On Delay Time
Turn-On Rise Time
2.7
V
GS
= -4.5V, V
DS
= -6V,
R
G
= 6
Ω
, I
D
= -2.8A
µs
9.8
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
6.5
Notes:
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to production testing.
Typical Characteristics – N-CHANNEL
1
0.8
0.6
0.4
0.2
0
1.5
V
GS
=4.5V
-55
℃
V
DS
= 5V
V
GS
=2.5V
25
℃
125
℃
150
℃
V
GS
=4.0V
1.2
0.9
0.6
0.3
0.0
85
℃
V
GS
=3.0V
V
GS
=2.0V
V
GS
=3.5V
V
GS
=1.5V
V
GS
=1.2V
2.5
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
1.5
1.2
0.9
0.6
0.3
0
5
4
3
2
1
0
V
GS
=4.5V
I
D
=400mA
0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
7
8
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
1.8
1.6
1.4
1.2
1
3
2.5
2
V
GS
= 4.5V
150
℃
V
GS
=4.5V, I
D
=400mA
125
℃
85
℃
1.5
1
V
GS
=2.5V, I
D
=200mA
25
℃
-55
℃
0.8
0.6
0.5
0
-50
-25
0
25
50
75
100 125 150
0
0.3
0.6
0.9
1.2
1.5
T
J
, JUNCTION TEMPERATURE (
℃
)
I
D
, DRAIN CURRENT (A)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current
and Temperature
2
1.5
1
1.2
1.1
1
V
GS
=2.5V, I
D
=200mA
I
D
=1mA
0.9
0.8
0.7
0.6
0.5
0.4
I
D
=250
μ
A
V
GS
=4.5V, I
D
=400mA
0.5
0
-50
-25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Temperature
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
4 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
1.5
1.4
1.3
1.2
1.1
1
100
10
1
f=1MHz
C
iss
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
C
oss
V
GS
=0V, T
A
=150
℃
V
GS
=0V, T
A
=125
℃
V
GS
=0V, T
A
=85
℃
V
GS
=0V, T
A
=25
℃
V
GS
=0V, T
A
=-55
℃
C
rss
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
10
8
R
DS(ON)
Limited
P
W
=100
μ
s
P
W
=1ms
P
W
=10ms
1
6
V
DS
=5V, I
D
=200mA
4
P
W
=100ms
P
W
=1s
0.1
T
J(MAX)
=150
℃
T
A
=25
℃
Single Pulse
DUT on 1*MRP board
V
GS
=10V
2
P
W
=10s
DC
0
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Q
g
(nC)
1
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Gate Charge
Figure 12. SOA, Safe Operation Area
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=149
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
Typical Characteristics – P-CHANNEL
20
18
16
14
12
10
8
30.0
V
DS
= -5V
V
GS
=-2.5V
V
GS
=-3.0V
V
GS
=-4.5V
25.0
20.0
15.0
10.0
5.0
V
GS
=-2.0V
V
GS
=-1.8V
V
GS
=-8.0V
6
V
GS
=-1.5V
4
85
℃
125
℃
25
℃
2
V
GS
=-1.2V
4 5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 14. Typical Output Characteristic
150
℃
0.5
-55
℃
0
0.0
0
1
1.5
2
2.5
3
0
1
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 15. Typical Transfer Characteristic
0.04
0.3
0.25
0.2
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
GS
=-2.5V
V
GS
=-4.5V
I
D
=-2.8A
0.15
0.1
0.05
0
I
D
=-2.5A
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 16. Typical On-Resistance
vs. Drain Current and
Gate Voltage
Figure 17. Typical Transfer Characteristic
1.4
1.2
1
0.03
0.028
0.026
0.024
0.022
0.02
V
GS
=- 4.5V
125
℃
150
℃
85
℃
25
℃
V
GS
=-4.5V, I
D
=-5.0A
V
GS
=-2.5V, I
D
=-3.0A
-55
℃
0.018
0.016
0.014
0.012
0.01
0.8
0.6
-50
-25
0
25
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 19. On-Resistance Variation with Temperature
50
75
100 125 150
0
2
4
6
8
10 12 14 16 18 20
I
D
, DRAIN CURRENT(A)
Figure 18. Typical On-Resistance vs. Drain Current and
Temperature
6 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
0.05
0.04
0.03
0.02
0.01
0
1.5
1.2
0.9
0.6
0.3
0
V
GS
=-2.5V, I
D
=-3.0A
V
GS
=-4.5V, I
D
=-5.0A
I
D
=-1mA
I
D
=-250
μ
A
-50
-25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 20. On-Resistance Variation with Temperature
Figure 21. Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
10000
f=1MHz
1000
100
10
C
oss
V
GS
=0V, T
A
=85
℃
V
GS
=0V, T
A
=125
℃
C
iss
6
V
GS
=0V, T
A
=150
℃
V
GS
=0V, T
A
=25
℃
4
C
rss
2
V
GS
=0V, T
A
=-55
℃
0
1
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
12
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 23. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 22. Diode Forward Voltage vs. Current
100
10
8
6
4
2
0
P
W
=100
μ
s
R
DS(ON)
Limited
P
W
=1ms
P
W
=10ms
1
P
W
=100ms
P
W
=1s
V
DS
=-6V, I
D
=-2.8A
T
J(MAX)
=150
℃
T
A
=25
℃
Single Pulse
DUT on 1*MRP board
V
GS
= -10V
0.1
0.01
P
W
=10s
DC
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 25. SOA, Safe Operation Area
Q
g
(nC)
Figure 24. Gate Charge
7 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
DMC25D1UVT
Application Circuit
Q2
In
Out
C1
R1
Load
Ci
Ca
Q1
On/Off
R2
Package Outline Dimensions
TSOT26
Dim Min Max
Typ
D
e1
A
A1
A2
D
E
E1
b
c
e
e1
L
1.00
2.90
2.80
1.60
0.95
1.90
0.01 0.10
0.84 0.90
E
E1
L2
c
0.30 0.45
0.12 0.20
L
4x
1
e
6x b
0.30 0.50
L2
θ
θ1
0.25
4°
0°
4°
8°
12°
A2
A1
A
All Dimensions in mm
8 of 9
April 2015
© Diodes Incorporated
DMC25D1UVT
Document number: DS37507 Rev. 2 – 2
