Diodes-Incorporated-DMC2710UV-7
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DMC2710UV
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
N-Channel: V
GS(TH)
< 1V
P-Channel: V
GS(TH)
< -1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Complementary Pair MOSFET
Device
BV
DSS
R
DS(ON)
I
D
@T
A
= +25°C
1.1A
0.4Ω @ V
GS
= 4.5V
0.5
Ω @ V
GS
= 2.5V
0.7Ω @ V
GS
= -4.5V
0.9
Ω @ V
GS
= -2.5V
Q1
20V
1.0A
-0.8A
Q2
-20V
-0.7A
Ultra-Small Surface Mount Package
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.
“Green” Device (Note 3)
For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
manufactured in IATF 16949 certified facilities), please
contact us
or your local Diodes representative.
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Applications
Case: SOT563
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, and so on
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
Power Supply Converter Circuits
D2
SOT563
G2
ESD PROTECTED
Gate Protection
Diode
S2
Bottom View
Top View
N-Channel
P-Channel
Top View
Pin Out
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMC2710UV-7
DMC2710UV-13
Case
Packaging
SOT563
SOT563
3000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free “Gre
en” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
HX8 = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y = Year (ex: I = 2021)
M = Month (ex: 9 = September)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
G
H
I
J
K
L
M
N
O
P
R
S
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
1 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Q1 Value
Q2 Value
Unit
V
20
±6
-20
±6
Gate-Source Voltage
V
V
GSS
Continuous Drain Current (Note 6)
T
A
= +25°C
1.1
0.9
-0.8
-0.7
Steady State
A
N-Channel: V
GS
= 4.5V
P-Channel: V
GS
= -4.5V
I
D
T
A
= +70°C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
0.9
5
-0.9
-3
A
A
I
S
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.46
274
Unit
Total Power Dissipation (Note 5)
W
°C/W
W
T
A
= +25°C
Steady State
P
D
R
ϴ
JA
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
0.8
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
152
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics N-CHANNEL
–
Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
100
±1.0
nA
μ
A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
—
—
—
0.88
0.14
0.18
0.28
0.7
1.0
0.4
0.5
0.7
1.2
V
Ω
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
GS
= 0V, I
S
= 150mA
Static Drain-Source On-Resistance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
V
42
—
pF
C
iss
C
oss
C
rss
Q
g
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
13
6.5
0.6
0.1
0.1
4.9
3.1
386
174
88
—
—
—
—
—
—
—
—
—
—
—
pF
pF
nC
nC
nC
ns
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47
Ω
R
G
= 10
Ω
,
I
D
= 200mA
ns
Turn-Off Delay Time
Turn-Off Fall Time
ns
t
D(OFF)
t
F
ns
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 1A, di/dt = 100A/μs
29
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6
.
Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Electrical Characteristics P-CHANNEL
–
Q2
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
-20
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
-100
±2.0
nA
μ
A
Zero Gate Voltage Drain Current
Gate-Source Leakage
@T
C
= +25°C
V
DS
= -20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
—
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.5
—
-0.8
0.4
0.5
0.7
-0.7
-1.0
0.7
0.9
1.3
-1.2
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
V
GS
= 0V, I
S
= -150mA
Static Drain-Source On-Resistance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
49
12
—
—
—
pF
pF
pF
C
iss
V
DS
= -16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
Reverse Transfer Capacitance
3.4
C
rss
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
—
—
—
—
—
—
—
—
0.7
0.1
0.1
16
—
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
ns
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -250mA
Q
gs
Q
gd
t
D(ON)
t
R
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47
Ω, R
G
= 10
Ω
,
I
D
= -200mA
15
213
89
t
D(OFF)
t
F
10.5
t
RR
I
F
= -1A, di/dt = 1
00A/μs
Reverse Recovery Charge
—
1.8
—
nC
Q
RR
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
3 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Typical Characteristics – N-CHANNEL
3
2.5
2
3.0
V
GS
= 2.5V
V
DS
= 5V
V
GS
= 2.0V
2.5
V
GS
= 3.0V
V
GS
= 3.5V
V
GS
= 4.0V
2.0
V
GS
= 1.8V
V
GS
= 4.5V
1.5
1
1.5
1.0
V
GS
= 1.5V
T
J
= 85
℃
T
J
= 150
℃
0.5
0
0.5
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 1.3V
2.5 3
V
GS
= 1.2V
T
J
= 125
℃
0.0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
2
1.8
1.6
1.4
1.2
1
V
GS
= 1.8V
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
I
D
= 600mA
I
D
= 500mA
V
GS
= 2.5V
V
GS
= 4.5V
2.5
I
D
= 350mA
0
0.5
1
1.5
2
3
0
1
2
3
4
5
6
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. Typical Transfer Characteristic
0.3
0.25
0.2
2
1.8
1.6
1.4
1.2
1
T
J
= 150
℃
V
GS
= 4.5V
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
T
J
= 125
℃
T
J
= 85
℃
0.15
0.1
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 1.8V, I
D
= 350mA
0.8
0.6
0.4
0.05
0
0
0.5
1
1.5
2
2.5
3
-50 -25
0
25
50
75 100
125 150
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
4 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Typical Characteristics – N-CHANNEL
(continued)
0.5
2
1.5
1
0.4
0.3
0.2
0.1
0
V
GS
= 1.8V, I
D
= 350mA
V
GS
= 2.5V, I
D
= 500mA
I
D
= 1mA
I
D
= 250
μ
A
0.5
0
V
GS
= 4.5V, I
D
= 600mA
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
100
3
2.5
2
f = 1MHz
V
GS
= 0V
C
iss
C
oss
10
1.5
1
C
rss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
0.5
0
T
J
= -55
o
C
1
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9 1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
P
W
= 1ms
10
4.5
4
R
DS(ON)
Limited
P
W
= 100µs
3.5
3
1
2.5
2
P
W
= 10ms
P
W
= 100ms
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on
1.5
1
0.1
V
DS
= 10V, I
D
= 250mA
P
W
= 1s
P
W
= 10s
0.5
0
1*MRP Board
V
GS
= 4.5V
DC
10
0.01
0
0.1
0.2
0.3
Q
g
(nC)
Figure 11. Gate Charge
0.4
0.5
0.6
0.7
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
5 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Typical Characteristics – P-CHANNEL
2.0
2
1.5
1
V
GS
= -2.5V
V
DS
= -5V
V
GS
= -3.0V
V
GS
= -3.5V
V
GS
= -2.0V
V
GS
= -1.8V
1.5
1.0
0.5
0.0
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -1.5V
0.5
0
T
J
= 85
℃
T
J
= 150
℃
T
J
= 25
℃
T
J
= -55
℃
V
GS
= -1.2V
2.5
V
GS
= -1.1V
T
J
= 125
℃
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 14. Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13. Typical Output Characteristic
1
2
1.8
1.6
1.4
1.2
1
V
GS
= -1.8V
I
D
= -430mA
0.8
0.6
0.4
0.2
0
V
GS
= -2.5V
I
D
= -300mA
0.8
0.6
0.4
0.2
0
V
GS
= -4.5V
I
D
= -150mA
0
0.5
1
1.5
2
0
1
2
3
4
5
6
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 16. Typical Transfer Characteristic
Figure 15. Typical On-Resistance vs. Drain
Current and Gate Voltage
2
1.8
1.6
1.4
1.2
1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= -4.5V
T
J
= 150
℃
T
J
= 125
℃
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
T
J
= 85
℃
T
J
= 25
℃
V
GS
= -1.8V, I
D
= -150mA
0.8
0.6
0.4
T
J
= -55
℃
-50 -25
0
25
50
75 100
125 150
0
0.5
1
1.5
2
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 18. On-Resistance Variation with Junction
Temperature
Figure 17. Typical On-Resistance vs. Drain
Current and Junction Temperature
6 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Typical Characteristics – P-CHANNEL
(continued)
1.2
1.5
1.2
0.9
0.6
0.3
0
V
GS
= -1.8V, I
D
= -150mA
1
V
GS
= -2.5V, I
D
= -300mA
0.8
I
D
= -1mA
0.6
0.4
I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -430mA
0.2
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 20. Gate Threshold Variation vs. Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 19. On-Resistance Variation with Junction
Temperature
2
1.5
1
100
f = 1MHz
C
iss
V
GS
= 0V
C
oss
10
T
J
= 85
o
C
0.5
0
C
rss
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= -55
o
C
1
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10 12 14 16 18 20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
Figure 22. Typical Junction Capacitance
P
W
= 1ms
10
4.5
4
R
DS(ON)
Limited
P
W
= 100µs
3.5
3
1
2.5
2
P
W
= 10ms
P
W
= 100ms
1.5
1
0.1
V
DS
= -10V, I
D
= -250mA
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on
1*MRP Board
V
GS
= -4.5V
P
W
= 1s
P
W
= 10s
DC
0.5
0
0.01
0
0.1
0.2
0.3
Q
g
(nC)
Figure 23. Gate Charge
0.4
0.5
0.6
0.7
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
7 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
1
D=0.7
D=0.5
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 276.7
℃
/W
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
t1, PULSE DURATION TIME (sec)
Figure 25. Transient Thermal Resistance
8 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
Package Outline Dimensions
SOT563
b
a
a
SOT563
Dim Min
Max Typ
0.55 0.60
—
E
E1
A
b
0.15 0.30 0.20
0.10 0.18 0.11
1.50 1.70 1.60
1.55 1.70 1.60
1.10 1.25 1.20
c
D
E
E1
e
L
c
R.01
e
—
—
0.50
e1
D
e1
L
0.90 1.10 1.00
0.10 0.30 0.20
a
8
°
9
°
7
°
All Dimensions in mm
A
Suggested Pad Layout
SOT563
C
X
Dimensions Value
(in mm)
C
C1
G
X
X1
Y
0.500
1.270
0.600
0.300
1.300
0.670
1.940
Y
Y1
G
C1
Y1
X1
9 of 10
June 2021
© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
DMC2710UV
IMPORTANT NOTICE
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Copyright © 2021 Diodes Incorporated
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© Diodes Incorporated
DMC2710UV
Document number: DS41423
Rev. 4 – 2
