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DMC67D8UFDBQ
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
Low On-Resistance
I
D Max
Device
V
(BR)DSS
R
DS(ON) Max
Low Input Capacitance
T
A
= +25°C
Low Profile, 0.6mm Maximum Height
ESD Protected Gate
4.0
Ω @ V
GS
= 10V
4.1
Ω @ V
GS
= 5V
0.39A
Q1
N-Channel
60V
0.38A
0.37A
-2.9A
-2.3A
-2.2A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
4.2
Ω @ V
GS
= 4V
72m
Ω @ V
GS
= -4.5 V
108m
Ω @ V
GS
= -2.7V
123m
Ω @ V
GS
= -2.5V
Q2
P-Channel
-20V
Description
Mechanical Data
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP, and is ideal for use in:
•
•
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—NiPdAu over Copper Leadframe.
•
•
•
Load Switch
e4
Solderable per MIL-STD-202, Method 208
•
•
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
U-DFN2020-6
Type B
D1
S2
G2
D2
D1
G1
D1
D2
G1
Gate Protection
S1
Bottom View
ESD PROTECTED
S1
Diode
Pin1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information
(Note 5)
Part Number
Case
Packaging
DMC67D8UFDB
Q-7
DMC67D8UFDB
Q-13
U-DFN2020-6 Type B
U-DFN2020-6 Type B
3000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. Se
e https://www.diodes.com/quality/lead-free/ fo
r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer t
o https://www.diodes.com/quality/.
Marking Information
7D = Product Type Marking Code
YWX = Date Code Marking
Y =
Year (ex:
9 = 2019)
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal code (ex: U = Monday)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
2025
Code
7
8
9
0
1
2
3
4
5
Week
Code
1-26
A-Z
27-52
a-z
53
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
1 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
– 2
DMC67D8UFDBQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Q1
N-Channel
Q2
P-Channel
Characteristic
Symbol
Unit
Drain-Source Voltage
V
V
V
DSS
V
GSS
60
-20
Gate-Source Voltage
±20
±12
Continuous Drain Current (Note 7)
0.39
0.31
Steady
State
T
A
= +25°C
T
A
= +70°C
-2.9
-2.3
A
I
D
N-Channel: V
GS
= 10V
P-Channel: V
GS
= -4.5V
-2.9
-20
-20
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
0.39
0.8
A
A
A
I
S
I
DM
I
SM
-0.8
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
P
D
Value
0.58
215
Unit
W
°C/W
W
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
R
ϴ
JA
P
D
0.89
T
A
= +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
140
R
ϴ
JA
R
ϴ
JC
T
J,
T
STG
°C/W
°C
35
-55 to +150
Electrical Characteristics: Q1 N-Channel
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Symbol Min
Typ
Max Unit
Test Condition
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
60
—
—
—
1.0
±10
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
µA
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
—
2.5
V
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.2A
V
GS
= 4V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
1.7
1.6
1.8
4.0
4.1
4.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
0.8
1.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
41
4.4
2.6
900
0.4
0.2
0.1
3.7
3.6
102
22
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1MHz, V
GS
= 0V, V
DS
= 0V
Total Gate Charge
pC
pC
pC
ns
ns
Q
g
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 30V, V
GS
= 10V,
Turn-Off Delay Time
ns R
g
= 25
Ω
, I
D
= 200mA
ns
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
20
ns
t
RR
I
F
= 1A, di/dt = 100A/µs
I
F
= 1A, di/dt = 100A/µs
7.9
nC
Q
RR
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June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
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DMC67D8UFDBQ
Electrical Characteristics: Q2 P-Channel
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
-20
—
—
-1
V
BV
DSS
I
DSS
I
D
= -250µA, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±12V
µA
nA
—
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
±100
I
GSS
-0.6
—
—
-1.25
V
m
Ω
V
V
GS(th)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -2.7V, I
D
= -3.0A
V
GS
= -2.5V, I
D
= -2.6A
51
87
99
72
108
123
Static Drain-Source On-Resistance
—
Diode Forward Voltage
DYNAMIC PARAMETERS (Note 9)
Total Gate Charge
-0.79
-1.26
I
S
= -1.7A, V
GS
= 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.3
2.0
1.9
12
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3.0A
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3.0A
V
GS
= -4.5V, V
DS
= -10V, I
D
= -3.0A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
20
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 10
Ω
, R
G
= 6
Ω
Turn-Off Delay Time
Turn-Off Fall Time
38
t
D(off)
t
f
41
Input Capacitance
443
128
101
C
iss
C
oss
C
rss
V
DS
= -16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Notes:
6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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June 2019
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DMC67D8UFDBQ
Document number: DS41258 Rev.
3
– 2
DMC67D8UFDBQ
Typical Characteristics
:
N-Channel
4 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
– 2
DMC67D8UFDBQ
1
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
W
DC
0.1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.01
T
T
V
= 150°C
J( m
a
x
)
= 25°C
C
= 10V
GS
Single Pulse
DUT on 1*MRP Board
0.001
1
10
100
-V
DS
DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
5 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
– 2
DMC67D8UFDBQ
Typical Characteristics: P-Channel
20
20
15
V
= -4.5V
V
= -5.0V
V
= -2.5V
GS
DS
GS
18
16
14
12
V
= -3.0V
GS
V
= -2.2V
= -2.0V
GS
GS
V
10
5
10
8
6
V
V
= -1.8V
GS
4
T
A
= 85°C
A
T
T
= 150°C
A
T
= 25°C
2
0
= 125°C
A
T
= -55°C
A
= -1.5V
GS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
4
5
-V
DS
, DRAIN -SOURCE VOL
T
AGE
(
V)
Figure 1
T
y
pical Output Characteristics
-V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 2
T
y
pical Transfer Characteristics
0.14
0.12
0.5
0.45
0.4
0.1
0.08
0.06
0.04
0.35
0.3
V
= -2.5V
GS
V
= -2.7V
GS
0.25
0.2
I
= -3.5A
D
V
= -4.5V
GS
0.15
0.1
0.02
0
I
= -3.0A
0.05
0
D
0
2
4
6
8
10
12
0
2
4
6
8
10 12
14 16 18
20
-V
GS
, GATE-SOURCE VOL
T
AGE
(
V)
Figure 4
T
y
pical Drain-Source On-Resistance
vs. Gate-Source Voltage
–
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
T
y
pical On-Resistance vs.
Dr
a
in Current and Gate Voltage
0.12
0.1
1.8
1.6
1.4
V
GS
= -4.5V
T
= 12
5
°
C
V
I
= -4.5V
A
GS
= -3.5A
0.08
0.06
0.04
T
= 15
0
°
C
D
A
1.2
V
= -2.7V
T
= 8
5
°
C
= 25
°
C
GS
= -3.0A
A
I
D
T
A
V
I
= -2.5V
GS
1
= -2.6A
T
= -5
5
°
C
D
A
0.02
0
0.8
0.6
0
5
10
15
20
–
5
0
–
2
5
0
25
50
75 100 125
150
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5
T
y
pical On-Resistance vs.
Dr
a
in Current and
T
e
m
p
e
r
a
ture
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with
T
e
m
p
e
r
a
ture
6 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
– 2
DMC67D8UFDBQ
0.1
1.2
0.08
1
V
I
= -2.5V
GS
= -2.6A
V
I
= -2.7V
GS
= -3.0A
D
-I =
-250µA
D
D
-I =
-1mA
D
0.8
0.06
V
I
= -4.5V
GS
= -3.5A
D
0.6
0.4
0.04
0.02
–
5
0
–
2
5
0
25
50
75 100 125
150
–
5
0
–
2
5
0
25
50
75 100 125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with
T
e
m
p
e
r
a
ture
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient
T
e
m
p
e
r
a
ture
1,000
15
10
C
iss
C
o
s
s
100
C
r
s
s
T =
85
°
C
A
T =
12
5
°
C
A
5
0
f = 1 MHz
= 0V
T =
25
°
C
A
V
T =
150
°
C
GS
A
T =
-55
°
C
A
10
0
0.3
0.6
0.9
1.2
1.5
0
4
8
12
16
20
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
-V
S
D
, SOURCE-DRAIN VOL
T
AGE
(
V)
Figure 9 Diode Forward Voltage vs. Current
Fig. 10
T
y
pical
T
otal Capacitance
10
8
100
10
R
D
S
(
on)
Limi
t
e
d
P
= 100µs
W
DC
= 10s
6
1
P
W
P
= 1s
W
V
I
= -10V
DS
P
= 100ms
W
= -3A
4
2
0
D
0.1
P
= 10ms
W
P
= 1ms
W
T
T
V
= 150°C
J( m
a
x
)
0.01
= 25°C
A
= -4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.001
0
2
4
6
8 10 12 14 16 18 20 22 24
0.1
1
10
100
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
-V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 12 SOA, Safe Operation Area
7 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
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DMC67D8UFDBQ
1
D = 0
.
9
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
0
5
D = 0
.
0
2
0.01
D = 0
.
0
1
D = 0
.
0
05
R
R
(t) = r(t) * R
Ɵ
J
A
Ɵ
J
A
Ɵ
J
A
Single Pulse
= 228°C
/
W
Du
t
y
C
ycle, D = t1/ t2
0.001
1E
–
0
6 0.00001 0.0001
0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIMES (sec)
Figure 13
Transient Thermal Resistance
8 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
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DMC67D8UFDBQ
Package Outline Dimensions
U-DFN2020-6 (Type B)
A3
A1
A
Seating Plane
U-DFN2020-6
Type B
Min Max Typ
0.545 0.605 0.575
0.00 0.05 0.02
Dim
A
A1
A3
b
D
D2
e
D
D2
D2
–
–
0.13
0.20 0.30 0.25
1.95 2.075 2.00
0.50 0.70 0.60
R
0
.
150
–
–
0.65
z1
E
E2
k
1.95 2.075 2.00
0.90 1.10 1.00
E
E2
z1
–
–
0.45
k
L
0.25 0.35 0.30
z
z1
–
–
–
–
0.225
0.175
L
All Dimensions in mm
e
z
b
Suggested Pad Layout
U-DFN2020-6 (Type B)
X2
C
Value
Dimensions
(in mm)
C
G
G1
X
X1
X2
Y
Y1
Y2
0.650
0.150
0.450
0.350
0.600
1.650
0.500
1.000
2.300
X1( 2x)
Y1( 2x)
Y2
G
Y
G1
X
9 of 10
June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
3
– 2
DMC67D8UFDBQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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June 2019
© Diodes Incorporated
DMC67D8UFDBQ
Document number: DS41258 Rev.
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