Diodes-Incorporated-DMG1012T-13
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DMG1012T
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Low On-Resistance
Case: SOT523
Low Gate Threshold Voltage
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Low Input Capacitance
Fast Switching Speed
Moisture Sensitivity: Level 1 per J-STD-020
Low Input/Output Leakage
Terminals: Finish
Matte Tin Annealed over Alloy 42
ESD Protected up to 2kV
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Weight: 0.002 grams (Approximate)
SOT523
D
S
G
ES
D
P
ROTECTE
D
T
O
2kV
ESD PROTECTION TO 2kV
Top View
Equivalent Circuit
(Note 6)
Top View
Ordering Information
(Note 5)
Part Number
DMG1012T-7
DMG1012T-13
DMG1012TQ-7
Qualification
Commercial
Commercial
Automotive
Case
Packaging
SOT523
SOT523
SOT523
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
5. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
6. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum V
GSS
rating
(given on page 2) can be applied.
Marking Information
NA1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
NA1
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2009
…
2018
2019
2020
2021
2022
2023
2024
2025
2026
Code
W
…
F
G
H
I
J
K
L
M
N
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
DMG1012T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
±6
V
V
GSS
Steady
State
T
A
= +25
C
T
A
= +85
C
0.63
0.45
Continuous Drain Current (Note 7)
Pulsed Drain Current
A
A
I
D
3
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 7)
Symbol
P
D
R
Value
0.28
Unit
W
Thermal Resistance, Junction to Ambient (Note 7)
Operating and Storage Temperature Range
452
°C/W
°C
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
100
±1.0
nA
µA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= 20V, V
GS
= 0V
V
GS
= ±4.5V, V
DS
= 0V
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.5
—
1.0
0.4
0.5
0.7
—
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
= 10V, I
D
= 400mA
V
GS
= 0V, I
S
= 150mA
0.3
0.4
0.5
1.4
0.7
Static Drain-Source On-Resistance
—
Ω
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
S
V
|Y
fs
|
V
SD
1.2
—
—
—
—
—
—
—
—
—
—
60.67
9.68
5.37
736.6
93.6
116.6
5.1
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
pC
pC
pC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47
Ω, R
G
= 10
Ω
,
I
D
= 200mA
7.4
Turn-On Rise Time
ns
26.7
12.3
Turn-Off Delay Time
ns
t
D(OFF)
t
F
Turn-Off Fall Time
ns
Notes:
7. Device mounted on FR-4 PCB, with minimum recommended pad layout.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
DMG1012T
1.5
1.2
1.5
1.2
V
= 8.0V
GS
V
= 4.5V
= 3.0V
GS
V
= 5V
DS
V
GS
V
= 2.5V
GS
V
= 2.0V
GS
0.9
0.9
0.6
0.6
0.3
0
V
= 1.5V
GS
T
= 150°C
A
T
= 125°C
A
0.3
0
T
A
= 85°C
T
= 25°C
A
T
= -55°C
A
V
= 1.2V
GS
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
0.8
0.7
0.6
0.5
V
= 4.5V
GS
T
= 150°C
A
0.6
0.5
0.4
0.4
0.3
0.2
T
= 125°C
T =
85°C
A
A
V
= 1.8V
= 2.5V
GS
T
T
= 25°C
A
A
V
GS
0.3
0.2
= -55°C
V
= 4.5V
GS
0.1
0
0.1
0
0
0.3
0.6
0.9
1.2
1.5
0
0.3
0.6
0.9
1.2
1.5
I
D
, DRAIN CURRENT (A)
Fig. 4
Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.8
0.6
0.4
0.2
0
1.7
1.5
1.3
1.1
V
= 2.5V
GS
I
= 500mA
D
V
I
= 2.5V
V
= 4.5V
GS
= 500mA
GS
= 1.0A
I
D
D
0.9
V
= 4.5V
= 1.0A
GS
I
D
0.7
0.5
-50 -25
0
25
50
75 100
125 150
(
°C )
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE
(
°C )
T
J
, JUNCTION TEMPERATURE
Fig. 5 On-Resistance Variation with
T
e
mperature
Fig. 6 On-Resistance Variation with
T
emperature
3 of 7
September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
DMG1012T
1.6
1.2
10
8
6
4
T
= 25°C
A
0.8
I
= 250µA
D
0.4
0
2
0
-50 -25
0
25
50
75 100
125 150
0.2
0.4
0.6
0.8
1.0
1.2
T
A
, AMBIENT TEMPERATURE (°C)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Fig. 8 Diode Forward Voltage vs. Current
100
1,000
100
C
iss
T
= 150°C
A
T
= 125°C
A
10
C
oss
C
rss
10
1
T
T
= 85°C
= 25°C
A
A
1
10
0
5
10
15
20
0
4
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
P
W
= 1ms
R
DS(ON)
Limited
P
W
= 100µs
1
0.1
0.01
P
W
= 10ms
P
W
= 100ms
P
W
= 1s
P
W
= 10s
DC
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
Board
V
GS
= 10V
0.001
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
4 of 7
September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
DMG1012T
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
θ
JA
R
θ
JA
(
t
)
=
r(
6
t
)
*
R
θ
JA
D = 0.02
D = 0.01
= 48
℃
/W
0.01
P(pk)
t
1
D = 0.005
t
2
T
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
5 of 7
September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
DMG1012T
Package Outline Dimensions
SOT523
SOT523
Dim Min
Max
0.10
Typ
0.05
0.75
0.50
0.22
0.12
1.60
1.60
0.80
A1
A2
A3
b
c
D
E
E1
e
0.00
0.60
0.80
E
E1
0.45
0.15
0.10
1.50
1.45
0.75
0.65
0.30
0.20
1.70
1.75
0.85
0.50 BSC
1.10
0.40
b
e1
D
e1
L
a
0.90
0.20
0
°
1.00
0.33
8
°
—
All Dimensions in mm
A2
A3
c
a
e
L
A1
Suggested Pad Layout
SOT523
Value
(in mm)
Dimensions
C
X
1.29
0.40
X1
Y
0.70
0.51
Y1
C
Y1
1.80
Y
X
X1
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September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
DMG1012T
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
September 2018
© Diodes Incorporated
DMG1012T
Document number: DS31783
Rev. 6 – 2
Mouser Electronics
Authorized Distributor
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