Diodes-Incorporated-DMG2301L-13
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DMG2301L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
Low Input Capacitance
I
D
Max
BV
DSS
R
DS(ON)
Max
Fast Switching Speed
T
A
= +25°C
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
120m
Ω @ V
GS
= -4.5V
150m
Ω @ V
GS
= -2.5V
-20V
-3A
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, making it ideal
for high efficiency power management applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminals: Finish
Matte Tin Annealed over Copper
Power Management Functions
DC-DC Converters
Motor Control
Leadframe. Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
SOT23 (Standard)
D
G
S
G
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMG2301L-7
DMG2301L-13
Case
SOT23 (Standard)
SOT23 (Standard)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s defi
nitions of Halogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
21M = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: I = 2021)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
…
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
B
…
I
J
K
L
M
N
O
P
R
S
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
DMG2301L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-3
-1
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
I
D
Pulsed Drain Current (Note 6)
-10
A
A
I
DM
I
S
Drain-Source Diode Forward Current ( t < 5 sec)
-0.75
Thermal Characteristics
Characteristic
Symbol
Value
1.5
Unit
W
Power Dissipation (Note 5)
P
D
83
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
V
BV
DSS
I
DSS
-1.0
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
=
6V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
T
J
= +25°C
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-1.2
120
150
-1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= 0V, I
S
= -0.75A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
476
53
45
5.5
0.9
1.8
5
pF
pF
pF
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
V
GS
= -4.5V, V
DS
= -6V, I
D
= -2.8A
Turn-On Delay Time
Turn-On Rise Time
10
30
20
ns
V
DS
= -6V, V
GS
= -4.5V,
R
GEN
= 6
Ω
, I
D
= -1A
Turn-Off Delay Time
ns
t
D(OFF)
t
F
Turn-Off Fall Time
ns
Notes:
5. Device mounted
on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
DMG2301L
10
8
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
T
A
= -55
o
C
T
A
= 25
o
C
V
DS
= -5V
V
GS
= -3.0V
V
GS
= -4.0V
T
A
= 150
o
C
T
A
= 125
o
C
V
GS
= -2.5V
V
GS
= -4.5V
6
T
A
= 85
o
C
V
GS
= -8.0V
4
V
GS
= -2.0V
2
V
GS
= -1.5V
V
GS
= -1.0V
V
GS
= -1.2V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2
Typical Transfer Characteristic
0.5
0.45
0.4
0.2
0.18
0.16
0.14
0.12
0.1
I
D
= -2.8A
0.35
0.3
V
GS
= -2.5V
0.25
0.2
0.08
0.06
0.04
0.02
0
V
GS
= -4.5V
0.15
0.1
0.05
0
I
D
= -2.0A
2
3
4
5
6
7
8
9
10
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current
and Gate Voltage
Figure 4
Typical Transfer Characteristic
0.15
0.12
0.09
0.06
0.03
0
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V
T
A
= 150
o
C
T
A
= 125
o
C
V
GS
= -2.5V, I
D
= -2.0A
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
V
GS
= -4.5V, I
D
= -3.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
Figure 6 On-Resistance Variation with Temperature
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
DMG2301L
0.2
0.18
0.16
0.14
0.12
0.1
1.5
1.2
0.9
0.6
0.3
0
V
GS
= -2.5V, I
D
= -2.0A
I
D
= -1mA
0.08
0.06
0.04
0.02
0
V
GS
= -4.5V, I
D
= -3.0A
I
D
= -250µA
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7 On-Resistance Variation with Temperature
T
A
, AMBIENT TEMPERATURE (
℃
)
Figure 8 Gate Threshold Variation vs Ambient
Temperature
10
8
1000
100
10
C
iss
f = 1MHz
V
GS
= 0V, T
A
= -55
o
C
V
GS
= 0V, T
A
= 25
o
C
6
V
GS
= 0V, T
A
= 85
o
C
C
oss
4
V
GS
= 0V, T
A
= 125
o
C
V
GS
= 0V, T
A
= 150
o
C
C
rss
2
0
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10 12 14 16 18 20
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10
Typical Junction Capacitance
8
6
4
2
0
100
10
R
DS(ON)
Limited
V
DS
= -6V, I
D
= -2.8A
1
DC
P
W
=10s
P
W
=1s
T
J(Max)
=150
℃
T
A
=25
℃
V
GS
=4.5V
Single Pulse
DUT on 1*MRP
Board
P
W
=100ms
P
W
=10ms
0.1
0.01
P
W
=1ms
P
W
=100µs
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
Q
g
(nC)
Figure 11 Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
DMG2301L
1
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.5
D=0.05
D=0.02
D=0.01
0.01
0.001
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=142
o
C/W
Duty Cycle, D=t1/t2
D=0.005
D=Single Pulse
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Pulse Duration Time (sec)
Figure 13 Transient Thermal Resistance
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
DMG2301L
Package Outline Dimensions
SOT23 (Standard)
D
GAUGE PLA
N
E
0.25
SOT23 (Standard)
A1
Dim
A
A1
A2
b
Min
0.90
0.00
0.85
0.30
Max
1.15 1.025
0.10 0.05
1.10 0.975
0.51 0.40
Typ
A2
A
c
a
L1
L
b
c
0.080 0.202
0.11
D
E
E1
e
e1
F
L1
L
a
2.80
2.25
1.20
0.89
1.78
0.40
0.45
0.25
0°
3.00
2.55
1.40
1.03 0.915
2.05 1.83
0.60 0.535
0.61
0.55
8°
2.90
2.40
1.30
E
E1
0.55
0.40
—
All Dimensions in mm
e
e1
F
Suggested Pad Layout
SOT23 (Standard)
Dimensions Value
(in mm)
Y
C
X
2.0
0.8
X1
Y
1.35
0.9
Y1
C
Y1
2.9
X
X1
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
DMG2301L
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes
p
roducts
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
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June 2021
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 4 – 2
