Diodes-Incorporated-DMG2301L-7
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DMG2301L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
Low Input Capacitance
V
(BR)DSS
R
DS(ON)
max
T
A
= +25°C
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
120m
Ω @ V
GS
= -4.5V
150m
Ω @ V
GS
= -2.5V
-20V
-3A
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminals: Finish
Matte Tin Annealed over Copper
Power Management Functions
DC-DC Converters
Motor Control
Leadframe. Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
S
Internal Schematic
Top View
Top View
Ordering Information
(Note 4)
Part Number
DMG2301L-7
DMG2301L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<
1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
21M = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 3 – 2
DMG2301L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-3
-1
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
I
D
Pulsed Drain Current (Note 6)
-10
A
A
I
DM
I
S
Drain-Source Diode Forward Current ( t < 5 sec)
-0.75
Thermal Characteristics
Characteristic
Symbol
Value
1.5
Unit
W
Power Dissipation (Note 5)
P
D
83
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
V
-1.0
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
GS
=
6V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current
Gate-Source Leakage
T
J
= +25°C
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.4
-1.2
120
150
-1.2
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= 0V, I
S
= -0.75A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
476
53
45
5.5
0.9
1.8
5
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
V
GS
= -4.5V, V
DS
= -6V, I
D
= -2.8A
Turn-On Delay Time
Turn-On Rise Time
10
30
20
V
DS
= -6V, V
GS
= -4.5V,
R
GEN
= 6
Ω
, I
D
= -1A
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5.
Device mounted on 1” x 1” FR
-4 PCB with high coverage 2oz. Copper, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 3 – 2
DMG2301L
10
8
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
T
A
= -55
o
C
T
A
= 25
o
C
V
DS
= -5V
V
GS
= -3.0V
V
GS
= -4.0V
T
A
= 150
o
C
T
A
= 125
o
C
V
GS
= -2.5V
V
GS
= -4.5V
6
T
A
= 85
o
C
V
GS
= -8.0V
4
V
GS
= -2.0V
V
GS
= -1.5V
V
GS
= -1.0V
2
V
GS
= -1.2V
0
0
1
0
1
2
3
0
0.5
1
1.5
2
2.5
3
3.5
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2
Typical Transfer Characteristic
0.5
0.45
0.4
0.2
0.18
0.16
0.14
0.12
0.1
I
D
= -2.8A
0.35
0.3
V
GS
= -2.5V
0.25
0.2
0.08
0.06
0.04
0.02
0
V
GS
= -4.5V
0.15
0.1
0.05
0
I
D
= -2.0A
0
2
4
6
8
2
3
4
5
6
7
8
9
10
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs Drain Current
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4
Typical Transfer Characteristic
and Gate Voltage
0.15
0.12
0.09
0.06
0.03
0
1.8
1.6
1.4
1.2
1
V
GS
= -4.5V
T
A
= 150
o
C
T
A
= 125
o
C
V
GS
= -2.5V, I
D
= -2.0A
T
A
= 85
o
C
T
A
= 25
o
C
T
A
= -55
o
C
V
GS
= -4.5V, I
D
= -3.0A
0.8
0.6
-50 -25
0
25
50
75 100
125 150
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
Figure 6 On-Resistance Variation with Temperature
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September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 3 – 2
DMG2301L
1.5
1.2
0.9
0.6
0.3
0
0.2
0.18
0.16
0.14
0.12
0.1
V
GS
= -2.5V, I
D
= -2.0A
I
D
= -1mA
0.08
0.06
0.04
0.02
0
V
GS
= -4.5V, I
D
= -3.0A
I
D
= -250µA
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
A
, AMBIENT TEMPERATURE (
℃
)
Figure 7 On-Resistance Variation with Temperature
Figure 8 Gate Threshold Variation vs Ambient
Temperature
10
8
1000
100
10
C
iss
f = 1MHz
V
GS
= 0V, T
A
= -55
o
C
V
GS
= 0V, T
A
= 25
o
C
6
V
GS
= 0V, T
A
= 85
o
C
C
oss
4
V
GS
= 0V, T
A
= 125
o
C
V
GS
= 0V, T
A
= 150
o
C
C
rss
2
0
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure 10
Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
8
6
4
2
0
100
10
R
DS(ON)
Limited
V
DS
= -6V, I
D
= -2.8A
1
DC
P
W
=10s
P
W
=1s
P
W
=100ms
T
J(Max)
=150
℃
T
A
=25
℃
V
GS
=4.5V
Single Pulse
DUT on
0.1
0.01
P
W
=10ms
P
W
=1ms
P
W
=100µs
1*MRP Board
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
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September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 3 – 2
DMG2301L
1
D=0.9
D=0.3
D=0.7
0.1
D=0.1
D=0.5
D=0.05
D=0.02
D=0.01
0.01
0.001
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=142
o
C/W
Duty Cycle, D=t1/t2
D=0.005
D=Single Pulse
1E-05
0.0001
0.001
0.01
t1, Pulse Duration Time (sec)
Figure 13 Transient Thermal Resistance
0.1
1
10
100
1000
Package Outline Dimensions
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
J
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
2.9
0.8
0.9
Z
C
C
E
2.0
1.35
E
X
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September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 3 – 2
DMG2301L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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September 2015
© Diodes Incorporated
DMG2301L
Document number: DS37540
Rev. 3 – 2
