Diodes-Incorporated-DMG302PU-13
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DMG302PU
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
•
•
•
•
•
•
•
•
•
Low On-Resistance
V
(BR)DSS
R
DS(ON)
T
A
= +25°C
-0.17A
-0.15A
Low Gate Threshold Voltage
10
Ω
@ V
GS
= -4.5V
13
Ω
@ V
GS
= -2.7V
-25V
Low Input
Capacitance
Fast Switching Speed
Small Surfaced Mount Package
Description
ESD Protected Gate (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
•
•
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
•
DC-DC Converters
Power Management Functions
•
•
•
Moisture Sensitivity:
Level 1 per J-STD-020
e3
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
•
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
D
D
G
ESD HBM >6kV
S
G
Gate Protection
Diode
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMG302PU-7
DMG302PU-13
Compliance
Standard
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Standard
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
13P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
13P
13P
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
May 2014
© Diodes Incorporated
DMG302PU
Document number: DS36227
Rev. 2 – 2
DMG302PU
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-25
Units
V
V
Gate-Source Voltage
-8
V
GSS
T
A
= +25°C
Steady
State
-0.17
-0.14
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Steady
State
-0.15
-0.12
A
A
Continuous Drain Current (Note 6) V
GS
= -2.7V
I
D
-0.5
Pulsed Drain Current
T
P
≤
300µs, Duty Cycle = 2%)
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
Units
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
0.33
0.45
376
275
81
Total Power Dissipation
W
P
D
Thermal Resistance, Junction to Ambient
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case
R
θ
JC
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-25
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
-1
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= -8V, V
DS
= 0V
µA
nA
Gate-Source Leakage
-100
I
GSS
⎯
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
-0.65
⎯
-0.96
2.5
3
-1.5
10
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -0.2A
V
GS
= -2.7V, I
D
= -0.05A
V
DS
= -5V, I
D
= -0.2A
V
GS
= 0V, I
S
= -0.2A
Static Drain-Source On-Resistance
R
DS(ON)
Ω
13
⎯
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
189
⎯
ms
V
|Y
fs
|
V
SD
⎯
⎯
-1.5
⎯
27.2
6.1
C
iss
C
oss
C
rss
Q
g
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
nC
1.7
Reverse Transfer Capacitance
Total Gate Charge
0.35
0.08
0.06
4.5
V
DS
= -5V, I
D
= -0.2A,
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
d(on)
t
r
V
GS
= -4.5V,
Turn-On Delay Time
Rise Time
2.3
V
GS
= -4.5V, V
DD
= -6V
ns
I
D
= -0.2A, R
G
= 50
Ω
Turn-Off Delay Time
Fall Time
24.1
11.0
t
d(off)
t
f
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
2 of 6
May 2014
© Diodes Incorporated
DMG302PU
Document number: DS36227
Rev. 2 – 2
DMG302PU
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
0.5
0.4
0.3
0.2
0.1
0
V
= -4.5V
GS
T
= 85
°
C
A
T
= 150
°
C
V
= -5.0V
A
DS
V
= -8.0V
T =
25
°
C
A
GS
V
V
= -4.0V
GS
T
= 125
°
C
A
T
= -55
°
C
A
= -3.0V
= -2.7V
GS
V
GS
V
= -2.5V
GS
V
V
= -2.0V
GS
= -1.5V
V
GS
= -1.2V
GS
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1
Typical Output Characteristics
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2
Typical Transfer Characteristics
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
10
9
8
7
6
5
4
3
2
1
0
V
= -4.5V
GS
T
= 150
°
C
A
V
= -2.7V
GS
T
= 125
°
C
A
T
= 85
°
C
A
V
= -4.5V
GS
2.0
1.5
1.0
T
A
= 25
°
C
T
= -55
°
C
A
0.5
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
-I
D
, DRAIN SOURCE CURRENT (A)
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
1.8
1.6
1.4
1.2
1
5
4.5
4
V
I
= -8V
GS
= -500mA
D
V
I
= -4.5V
GS
= -300mA
D
3.5
3
V
= -4.5V
GS
I
= -300mA
D
2.5
2
V
= -8V
GS
I
= -500mA
D
1.5
1
0.8
0.5
0
0.6
-50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Figure 5
On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
-50 -25
T
J
, JUNCTION TEMPERATURE (
Figure 6
On-Resistance Variation with
T
emperature
0
25
50
75 100
125 150
°
C)
°
C)
3 of 6
May 2014
© Diodes Incorporated
DMG302PU
Document number: DS36227
Rev. 2 – 2
DMG302PU
1.2
1.1
1
1
0.8
0.6
0.4
0.2
0
-I =
1mA
D
0.9
0.8
0.7
0.6
0.5
0.4
-I =
250µA
D
T =
25
°
C
A
-50 -25
0
25
50
75 100
125 150
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8
Diode Forward Voltage vs. Current
Figure 7
Gate Threshold Variation vs. Ambient
T
e
mperature
100
8
6
4
2
f = 1MHz
C
iss
V
I
= -5V
DS
= -200mA
D
10
C
oss
C
rss
1
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
5
10
15
20
25
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10
Gate-Charge Characteristics
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9
Typical Junction Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
R
θ
JA
(t) = r(t) * R
θ
R
θ
JA
= 373°C/W
JA
D = 0.005
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 11
Transient Thermal Resistance
4 of 6
May 2014
© Diodes Incorporated
DMG302PU
Document number: DS36227
Rev. 2 – 2
DMG302PU
Package Outline Dimensions
A
SOT23
Dim
A
B
C
D
F
G
H
J
K
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
–
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
–
H
G
M
K
J
K1
D
K1
L
M
–
F
L
0.45
0.085 0.18
0° 8°
0.61
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
Z
C
1.35
E
X
5 of 6
May 2014
© Diodes Incorporated
DMG302PU
Document number: DS36227
Rev. 2 – 2
DMG302PU
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
6 of 6
May 2014
© Diodes Incorporated
DMG302PU
Document number: DS36227
Rev. 2 – 2
