Diodes-Incorporated-DMG3404L-13
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DMG3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
Max
T
A
= +25°C
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
5.8A
4.8A
25
mΩ @ V
GS
= 10V
35
mΩ @ V
GS
= 4.5V
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case: SOT23
Case
Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Battery Charging
Power Management Functions
DC-DC Converters
e3
Terminals Connections: See Diagram Below
Weight: 0.009138 grams (Approximate)
Portable Power Adaptors
D
SOT23
D
G
S
G
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMG3404L-7
DMG3404L-13
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
N34 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
N34
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
2019
Code
Z
A
B
C
D
E
F
G
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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January 2016
© Diodes Incorporated
DMG3404L
Document number: DS37640
Rev. 2 – 2
DMG3404L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
4.2
3.5
A
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Steady
State
5.8
4.9
A
A
I
D
Pulsed Drain Current (Pulse W
idth ≤10µS, Duty Cycle ≤1%
)
30
I
DM
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
0.78
Unit
W
Thermal Resistance, Junction to Ambient (Note 5)
Power Dissipation (Note 6)
164
°C/W
W
R
θ
JA
1.33
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
96
°C/W
°C
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BV
DSS
I
DSS
1.0
V
GS
= 0V, I
D
= 250μA
μ
A
nA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1.0
1.5
2.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 5.8A
V
GS
= 4.5V, I
D
= 4.8A
V
GS
= 0V, I
S
= 1A
21
24
25
35
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
0.75
1.0
641
66
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
51
Reverse Transfer Capacitance
Gate Resistance
2.2
13.2
1.7
2.2
3.3
4.4
22
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 10V, V
DS
= 15V, I
D
= 5.8A
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Q
g
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
Turn-On Delay Time
Turn-On Rise Time
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25
Ω, R
g
= 3
Ω
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
5.2
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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January 2016
© Diodes Incorporated
DMG3404L
Document number: DS37640
Rev. 2 – 2
DMG3404L
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
V
GS
=10V
V
GS
=3.5V
V
DS
= 5.0V
V
GS
=3.0V
V
GS
=5.0V
V
GS
=4.5V
V
GS
=4.0V
T
J
=150
℃
V
GS
=2.5V
T
J
=125
℃
T
J
=85
℃
T
J
=25
℃
T
J
=-55
℃
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.05
V
GS
= 4.5V
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
T
J
=125
℃
T
J
=150
℃
V
GS
=4.5V
V
GS
=10V
T
J
=85
℃
T
J
=25
℃
T
J
=-55
℃
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
1.8
1.6
V
GS
=4.5V, I
D
=5.0A
1.4
V
GS
=4.5V, I
D
=5.0A
1.2
V
GS
=10V, I
D
=10A
1
0.8
0.6
V
GS
=10V, I
D
=10A
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Temperature
Figure 5. On-Resistance Variation with Temperature
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January 2016
© Diodes Incorporated
DMG3404L
Document number: DS37640
Rev. 2 – 2
DMG3404L
30
25
20
15
10
5
3
2.5
2
I
D
=1mA
1.5
1
V
GS
=0V, T
A
=25
℃
I
D
=250
μ
A
0.5
0
0
0
0.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
0.4
0.6
0.8
1
1.2
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. Gate Threshold Variation vs. Junction
Temperature
10000
10
8
f=1MHz
V
DS
=15V, I
D
=10A
C
iss
1000
100
10
6
C
oss
4
2
C
rss
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10
12
14
Qg, TOTAL GATE CHARGE (nC)
Figure 10. Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
100
10
P
W
=100
μ
s
P
W
=100
P
W
=1ms
R
DS(ON)
Limited
ms
1
P
W
=10ms
T
J(Max)
=150
℃
T
A
=25
℃
0.1
0.01
Single Pulse
DUT on 1*MRP
Board
P
W
=1s
P
W
=10s
DC
10
0.1
1
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
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January 2016
© Diodes Incorporated
DMG3404L
Document number: DS37640
Rev. 2 – 2
DMG3404L
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t)=r(t) * R
θ
JA
R
θ
JA
=168
℃
/W
Duty Cycle, D=t1 /
t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
Package Outline Dimensions
SOT23
All 7°
SOT23
H
Dim
A
B
C
D
F
G
H
J
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
GAUGE PLANE
0.25
0.40
1.30
2.40
J
K
K1
a
2.05
3.00
1.83
2.90
0.05
M
A
L
L1
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
0.45
0.25
0.61
0.55
0.55
0.40
C
B
0.085 0.150 0.110
8°
All Dimensions in mm
D
G
F
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January 2016
© Diodes Incorporated
DMG3404L
Document number: DS37640
Rev. 2 – 2
DMG3404L
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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January 2016
© Diodes Incorporated
DMG3404L
Document number: DS37640
Rev. 2 – 2
