Diodes-Incorporated-DMG3415U-7
| Part # | Diodes-Incorporated-DMG3415U-7 |
Download  | Diodes-Incorporated-DMG3415U-7 |
DMG3415U
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
T
A
= +25°C
-4.0A
Low On-Resistance
V
(BR)DSS
R
DS(on) max
Low Input Capacitance
42.5m
Ω
@ V
GS
= -4.5V
71m
Ω
@ V
GS
= -1.8V
Fast Switching Speed
-20V
-2.0A
Low Input/Output Leakage
ESD Protected Up To 3kV
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
⎯
Matte Tin Annealed over Copper Leadframe.
DC-DC Converters
Power Management Functions
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
SOT23
D
G
S
G
Gate Protection
Diode
ESD PROTECTED TO 3kV
S
Top View
Internal Schematic
Top View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMG3415U-7
DMG3415UQ-7
DMG3415U-13
Compliance
Standard
Automotive
Standard
Case
Packaging
SOT23
SOT23
SOT23
3,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
34P = Product Type Marking Code
YM
YM or
= Date Code Marking for
Y or
= Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
January 2015
© Diodes Incorporated
DMG3415U
Document number: DS31735 Rev. 12 – 2
DMG3415U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Units
V
V
Gate-Source Voltage
±8
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
-4.0
-3.5
A
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
I
D
Pulsed Drain Current (10
μ
s pulse, duty cycle = 1%)
-30
I
DM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
Value
0.9
Units
W
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to case (Note 5)
Operating and Storage Temperature Range
139
°C/W
°C/W
°C
R
θ
JA
32
R
θ
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
-1
-20
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
=
8.0V, V
DS
= 0V
µA
µA
Gate-Source Leakage
I
GSS
10
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.3
—
-0.55
31
-1.0
42.5
53
V
mΩ
S
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μ
A
V
GS
= -4.5V, I
D
= -4.0A
V
GS
= -2.5V, I
D
= -3.5A
V
GS
= -1.8V, I
D
= -2.0A
V
DS
= -5V, I
D
= -4A
—
Static Drain-Source On-Resistance
40
R
DS(ON)
—
51
71
—
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
3
—
|g
FS
|
—
—
—
—
—
—
—
—
294
104
25
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
250
V
DS
= 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9.1
1.5
1.7
71
nC
nC
nC
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
t
D(on)
t
r
V
GS
= -4.5V, V
DS
= -10V
I
D
= -4A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
117
795
393
V
DS
= -10V, V
GS
= -4.5V,
R
D
= 2.5Ω, R
G
= 3.0Ω, I
D
= -1A
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
2 of 6
January 2015
© Diodes Incorporated
DMG3415U
Document number: DS31735 Rev. 12 – 2
DMG3415U
20
16
20
16
V
V
V
= 4.5V
= 3.5V
= 3.0V
GS
GS
GS
V
= 2.5V
GS
V
= 5V
DS
V
= 2.0V
GS
12
8
12
8
V
= 1.5V
GS
T
A
= 150°C
4
0
4
0
T
= 125°C
T
= 85°C
A
A
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.08
0.07
0.08
0.07
V
= 4.5V
GS
0.06
0.05
0.04
0.06
0.05
0.04
T
= 150°C
A
T
= 125°C
= 85°C
V
= 2.5V
= 4.5V
A
GS
T
A
V
T
= 25°C
GS
A
0.03
0.02
0.03
0.02
T
= -55°C
A
0.01
0
0.01
0
0
4
8
12
16
20
0
4
8
12
16
20
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3
Typical On-Resistance
Fig. 4 Typical On-Resistance
vs. Drain Current and Gate Voltage
vs. Drain Current and
T
e
mperature
1.6
1.4
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
= 2.5V
GS
1.2
1.0
I
= 5A
D
V
= 4.5V
GS
V
= 4.5V
GS
= 10A
I
= 10A
D
I
D
0.8
0.6
V
= 2.5V
= 5A
GS
I
D
0.01
0
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPER
A
T
URE (°C)
Fig. 6 On-Resistance Variation with
T
emperature
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with
T
e
mperature
3 of 6
January 2015
© Diodes Incorporated
DMG3415U
Document number: DS31735 Rev. 12 – 2
DMG3415U
20
18
16
1.2
0.9
14
12
10
8
I
= 1mA
D
0.6
T
= 25°C
A
I
= 250µA
D
6
0.3
0
4
2
0
-50 -25
0
25
50
75 100
125 150
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
100
100,000
R
DS
(on)
Limited
10,000
1,000
100
T
= 150°C
= 125°C
A
10
1
T
A
DC
P
W
=10s
P
W
=1s
T
= 85°C
A
P
W
=100ms
P
W
=10ms
P
W
=1ms
0.1
0.01
T
J(Max)
=150
℃
T
A
=25
℃
10
1
P
W
=100us
T
= 25°C
V
GS
=10V
Single Pulse
DUT on 1*MRP board
A
T
= -55°C
A
0.1
1
10
100
2
4
6
8
10 12 14 16 18
20
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
DS
, Drain-Source Voltage (V)
Fig. 9 Typical Leakage Current vs. Drain-Source Voltage
Fig. 10 SOA, Safe Operation Area
4.5
4
V
= -10V
DS
3.5
3
I
= -4.5A
D
2.5
2
1.5
1
0.5
0
0
1
2
3
4
5
6
7
8
9
10
Q
g
, TO
T
AL GATE CHARGE (nC)
Figure 11 Gate Charge
4 of 6
January 2015
© Diodes Incorporated
DMG3415U
Document number: DS31735 Rev. 12 – 2
DMG3415U
1
D = 0
.
7
D = 0
.
5
D = 0
.
3
0.1
D = 0
.
1
D = 0
.
9
D = 0
.
0
5
R
(t) = r(t) * R
J
A
J
A
R
= 171°C
/
W
J
A
D = 0
.
0
2
D = 0
.
0
1
D = 0
.
0
05
P(pk)
T
0.01
t
1
t
2
– T
= P * R
(t)
J
A
J
A
Du
t
y
C
ycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DURATION TIME (s)
Figure 12 Transient Thermal Response
Package Outline Dimensions
All 7°
H
SOT23
Min Max
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Typ
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.51
1.40
2.50
1.03 0.915
0.60 0.535
0.40
1.30
2.40
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
X
E
5 of 6
January 2015
© Diodes Incorporated
DMG3415U
Document number: DS31735 Rev. 12 – 2
DMG3415U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
6 of 6
January 2015
© Diodes Incorporated
DMG3415U
Document number: DS31735 Rev. 12 – 2
