Diodes-Incorporated-DMG3418L-13
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DMG3418L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
Low On-Resistance
BV
DSS
R
DS(ON) Max
T
A
= +25°C
Low Input Capacitance
4A
3A
60
mΩ @
V
GS
= 10V
7
0mΩ @
V
GS
= 4.5V
Fast Switching Speed
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
Description
This MOSFET has been designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Mechanical Data
Backlighting
Case: SOT23
Power Management Functions
DC-DC Converters
Motor Control
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.
e3
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
r
a in
SOT23 (Standard)
D
G a
t
e
S o u
r
ce
S
G
Top View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMG3418L-7
DMG3418L-13
Compliance
Case
Packaging
Standard
Standard
SOT23 (Standard)
SOT23 (Standard)
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
18G = Product Type Marking Code
YM or
= Date Code Marking
YM
Y or
= Year (ex: I = 2021)
Y
M = Month (ex: 9 = September)
Date Code Key
Year
2013
…
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
A
…
I
J
K
L
M
N
O
P
R
S
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
1
2
3
4
5
6
7
8
9
O
N
D
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July 2021
© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 4 – 2
DMG3418L
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
V
V
GSS
12
Drain Current (Note 5)
T
A
= +25°C
T
A
= +70°C
Pulsed
4.0
3.1
A
A
I
D
Drain Current (Note 6)
15
I
DM
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
T
A
= +25°C
T
A
= +70°C
1.4
0.9
W
P
D
90
°C/W
°C
Thermal Resistance, Junction to Ambient
@T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
R
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
30
V
1
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
µA
nA
100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
1.5
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 2A
60
70
150
25
30
50
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1.2
V
GS
= 0V, I
S
= 2.0A
pF
pF
pF
C
iss
C
oss
C
rss
Q
g
464.3
49.5
43.8
5.5
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 4A
Gate-Source Charge
1.1
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
1.8
Turn-On Delay Time
1.9
ns
ns
ns
ns
Turn-On Rise Time
1.6
V
DD
= 15V, V
GEN
= 10V,
R
GEN
= 3
Ω
, R
L
= 3.75
Ω
Turn-Off Delay Time
10.3
2.0
t
D(OFF)
t
F
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB with 2oz. copper and test pulse width t
≤ 10s.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 4 – 2
DMG3418L
10.0
8.0
6.0
4.0
2.0
0.0
20
18
16
14
12
10
8
V
= 10V
GS
V
= 5.0V
DS
V
= 4.5V
GS
V
= 3.5V
GS
V
V
= 3.0V
= 2.5V
GS
V
= 2.0V
o
T
A
= 150 C
GS
GS
6
o
T
A
= 125 C
o
T
A
= 25 C
4
o
T
A
= 85 C
2
o
T
A
= -55 C
V
= 1.5V
GS
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 1
Typical Output Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2
Typical Transfer Characteristics
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
= 4.5V
GS
T
A
= 150 C
o
A
o
T
A
= 125 C
o
T
A
= 85 C
0.1
o
T
A
= 25 C
V
= 2.5V
GS
T
A
= -5
C
5
o
V
= 4.5V
GS
V
= 10V
GS
0.01
0
4
8
12
16
20
1
3
5
7
9
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4
Typical On-Resistance vs.
Drain Current and
T
e
mperature
Figure 3
Typical On-Resistance vs.
Drain Current and Gate Voltage
2
0.1
0.08
0.06
0.04
0.02
0
V
= 10V
= 6A
GS
1.8
I
D
1.6
1.4
1.2
V
I
= 2.5V
GS
= 2A
V
I
= 4.5V
GS
D
= 3A
D
V
I
= 4.5V
GS
GS
= 3A
D
V
I
= 2.5V
GS
= 2A
D
1
0.8
0.6
0.4
V
I
= 10V
= 6A
D
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5
On-Resistance Variation with
T
e
mperature
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Figure 6
On-Resistance Variation with
T
e
mperature
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© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 4 – 2
DMG3418L
2
1.6
1.2
0.8
0.4
0
20
18
16
14
12
10
8
I
= 1mA
D
o
T
A
= 25 C
I
D
= 250
μ
A
6
4
2
0
75
T
J
, JUNCTION TEMPER
A
T
URE (
C)
-50 -25
0
25
50
100 125 150
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOL
T
A
GE (V)
Junction
Figure 7
Gate Threshold Variation vs.
Temperature
Figure 8
Diode Forward Voltage vs. Current
1,000
10
8
C
iss
V
I
= 15V
DS
= 4A
D
6
100
4
C
oss
C
rss
2
f = 1MHz
10
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10
Gate Charge
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9
Typical Junction Capacitance
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July 2021
© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 4 – 2
DMG3418L
Package Outline Dimensions
SOT23 (Standard)
D
SOT23 (Standard)
GAUGE PLA
N
E
0.25
Dim
A
A1
A2
b
c
D
E
E1
e
Min
0.90
0.00
0.85
0.30
Max
Typ
1.15 1.025
0.10 0.05
1.10 0.975
0.51 0.40
A1
A2
A
c
a
0.080 0.202
0.11
L1
L
b
2.80
2.25
1.20
0.89
1.78
0.40
0.45
0.25
0°
3.00
2.55
1.40
1.03 0.915
2.05 1.83
0.60 0.535
0.61
0.55
8°
2.90
2.40
1.30
e1
F
L1
L
0.55
0.40
—
E
E1
a
All Dimensions in mm
e
e1
F
Suggested Pad Layout
SOT23 (Standard)
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
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July 2021
© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 4 – 2
DMG3418L
IMPORTANT NOTICE
DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED,
1.
WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY
INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
2.
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes products
described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any
product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes
products. Diodes products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for
(a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of the Diodes products for their intended
applications, (c) ensuring their applications, which incorporate Diodes products, comply the applicable legal and regulatory requirements as well
as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality
control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with
their applications.
3.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes
from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such
use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against al
l damages and
liabilities.
4.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent
applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks
and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties
(including third parties whose products and services may be described in this document or on Diodes’ website) under this docu
ment.
5.
Diodes
p
roducts
are
provided
subject
to
Diodes’
Standard
Terms
and
Conditions
of
Sale
(
https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
)
or other applicable terms. This document does not
alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any
products purchased through unauthorized sales channel.
6.
Diodes products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is
prohibited under any applicable laws and regulations. Should customers or users use Diodes products in contravention of any applicable laws or
regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or
penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless
against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with
the applicable laws and regulations, as well as any unintended or unauthorized application.
7.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain
technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and
Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make
modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described
herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document
is the final and determinative format released by Diodes.
8.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is
prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such
unauthorized use.
Copyright © 2021 Diodes Incorporated
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July 2021
© Diodes Incorporated
DMG3418L
Document number: DS36366 Rev. 4 – 2
