Diodes-Incorporated-DMG4496SSS-13
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DMG4496SSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
I
D
max
V
(BR)DSS
R
DS(ON)
max
T
A
= +25°C
10A
Low Input Capacitance
Fast Switching Speed
21.5m
Ω
@ V
GS
= 10V
29m
Ω
@ V
GS
= 4.5V
30V
Low Input/Output Leakage
8A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
Matte Tin annealed over Copper leadframe.
Applications
Backlighting
Power Management Functions
DC-DC Converters
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
S
S
S
G
D
D
SO-8
G
D
D
S
Top View
Equivalent circuit
Internal Schematic
Top View
Ordering Information
(Note 4 & 5)
Part Number
DMG4496SSS-13
DMG4496SSSQ-13
Compliance
Standard
Automotive
Case
SO-8
SO-8
Packaging
2500 / Tape & Reel
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer
to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
8
5
8
5
= Manufacturer’s Marking
G4496SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
G4496SS
YY WW
G4496SS
WW = Week (01 – 53)
YY
WW
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
1
4
Chengdu A/T Site
Shanghai A/T Site
1 of 6
September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 – 2
DMG4496SSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Unit
V
Gate-Source Voltage
±25
V
V
GSS
T
A
= +25°C
T
A
= +85°C
Steady
State
10
6
Continuous Drain Current (Note 6)
A
I
D
Pulsed Drain Current (Note 7)
60
8
A
A
I
DM
I
AR
Avalanche Current
(Notes 7 & 8)
Repetitive Avalanche Energy
(Notes 7 & 8) L = 0.1mH
3.2
mJ
E
AR
Thermal Characteristics
Characteristic
Symbol
P
D
Value
1.42
Unit
W
Power Dissipation (Note 6)
88.49
°C/W
°C
Thermal Resistance, Junction to Ambient @T
A
= +25°C
(Note 6)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J
,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
30
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
μ
A
nA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
0.8
—
1.2
2.0
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 7.5A
V
DS
= 5V, I
D
= 10A
V
GS
= 0V, I
S
= 1A
16
22
21.5
29
Static Drain-Source On-Resistance
m
ꢀ
R
DS(ON)
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
11.7
0.70
—
1
S
V
|Y
fs
|
V
SD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
493.5
94.5
50.4
2.86
4.7
pF
pF
pF
ꢀ
C
iss
C
oss
C
rss
R
g
V
DS
=15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, V
GS
= 4.5V, ID =10A
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
nC
10.2
1.4
Q
g
nC
nC
ns
ns
ns
ns
Q
gs
Q
gd
t
D(on)
t
r
V
DS
= 15V, V
GS
= 10V, ID =10A
Gate-Drain Charge
1.7
Turn-On Delay Time
4.76
3.64
19.5
4.9
Turn-On Rise Time
V
GS
= 10V, V
Ds
= 15V,
R
G
= 6
ꢀ
, R
L
= 15
ꢀ
,
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Notes:
6. Device mounted on 1 in.
2
FR-4 board with 2oz. Copper, in a still air environment @ T
A
= +25°C. The value in any given application depends on the
user’s specific board design.
7. Repetitive rating, pulse width limited by junction temperature.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
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September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 – 2
DMG4496SSS
20
15
30
25
20
V
= 10V
GS
V
= 5V
DS
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
15
GS
10
V
= 150°C
GS
V
= 125°C
= 85°C
GS
10
5
V
GS
5
0
V
= 3.0V
V
= 25°C
GS
GS
V
= 2.5V
GS
V
= -55°C
GS
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.04
0.03
0.05
0.04
V
= 10V
GS
T
= 150°C
= 125°C
A
V
= 3.5V
T
GS
A
0.03
0.02
T
= 85°C
A
0.02
V
= 4.5V
GS
T
= 25°C
A
V
= 10V
GS
T
= -55°C
A
0.01
0
0.01
0
0
5
10
15
20
25
30
0
5
10
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and
T
e
mperature
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3
Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
0.04
V
= 4.5V
= 5A
GS
I
D
V
= 10V
GS
1.3
1.1
I
= 10A
D
V
= 4.5V
= 5A
GS
I
D
0.03
0.02
0.9
V
= 10V
GS
I
= 10A
D
0.01
0
0.7
0.5
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with
T
e
mperature
Fig. 6 On-Resistance Variation with
T
emperature
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September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 – 2
DMG4496SSS
20
18
2.0
1.8
16
14
12
10
8
1.6
1.4
1.2
1.0
T
= 25°C
A
I
= 1mA
D
I
= 250µA
D
6
4
0.8
0.6
2
0
-50 -25
0
25
50
75 100
125 150
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
10,000
1,000
1,000
f = 1MHz
C
iss
T
= 150°C
A
T
= 125°C
A
C
100
oss
100
C
rss
T
= 85°C
A
10
1
T
= 25°C
A
10
0
4
8
12
16
20
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical
T
o
tal Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
JA
JA
R
= 90°C/W
JA
0.01
P(pk)
D = 0.01
t
1
t
2
D = 0.005
T
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 11 Transient Thermal Response
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September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 – 2
DMG4496SSS
Package Outline Dimensions
SO-8
Min
–
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7
°~
9
°
h
°
45
1.27 Typ
h
L
–
0.35
0.82
8
Detail ‘A’
A2
A3
A
0.62
0
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
5 of 6
September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 – 2
DMG4496SSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
6 of 6
September 2013
© Diodes Incorporated
DMG4496SSS
Document number: DS32048 Rev. 5 – 2
