Diodes-Incorporated-DMG4800LSD-13
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DMG4800LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
I
D
max
100% avalanche rated part
V
(BR)DSS
R
DS(on)
max
T
A
= +25°C
Low R
DS(on)
– minimizes conduction losses
Low Q
g
– minimizes switching losses
16m
Ω
@ V
GS
= 10V
22m
Ω
@ V
GS
= 4.5V
9.8A
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
8.4A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper
Applications
Backlighting
Power Management Functions
DC-DC Converters
e3
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.076 grams (approximate)
Top View
D
1
D
2
SO-8
G
1
G
2
S
1
S
2
Top View
Pin Configuration
Internal Schematic
N-Channel MOSFET
N-Channel MOSFET
Ordering Information
(Notes 4 & 5)
Part Number
DMG4800LSD-13
DMG4800LSDQ-13
Compliance
Standard
Automotive
Case
SO-8
SO-8
Packaging
2,500 / Tape & Reel
2,500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally
Marking Information
8
5
8
5
= Manufacturer’s Marking
G4800LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 – 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
G4800LD
YY WW
G4800LD
YY WW
1
Shanghai A/T Site
4
1
Chengdu A/T Site
4
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July 2014
© Diodes Incorporated
DMG4800LSD
Document number: DS31858 Rev. 7 – 2
DMG4800LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±25
V
GSS
T
A
= +25°C
Steady
State
7.5
6.0
A
A
A
A
I
D
I
D
I
D
I
D
T
A
= +70°C
Continuous Drain Current (Note 7) V
GS
= 10V
Continuous Drain Current (Note 7) V
GS
= 4.5V
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
9.8
7.7
t<10s
Steady
State
6.4
5.0
T
A
= +70°C
T
A
= +25°C
8.4
6.6
t<10s
T
A
= +70°C
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 8 & 9) L = 0.1mH
2
A
A
I
S
42
17
14
I
DM
I
AR
E
AR
A
Repetitive Avalanche Energy (Notes 8 & 9) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
1.17
107
61
1.5
Units
W
Total Power Dissipation (Note 6)
P
D
R
θ
JA
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
t<10s
Steady State
t<10s
83
49
Thermal Resistance, Junction to Ambient (Note 7)
R
θ
JA
°C/W
°C
Thermal Resistance, Junction to Case
14.5
-55 to 150
R
θ
JC
Operating and Storage Temperature Range
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 10)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
1.0
30
—
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
μ
A
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
±100
I
GSS
ON CHARACTERISTICS (Note 10)
Gate Threshold Voltage
0.8
—
—
1.6
V
V
GS(th)
R
DS(on)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
V
DS
= 10V, I
D
= 9A
V
GS
= 0V, I
S
= 1A
12
16
16
22
Static Drain-Source On-Resistance
m
ꢀ
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 11)
Input Capacitance
8
—
S
V
|Y
fs
|
V
SD
0.72
0.94
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
798
128
pF
pF
pF
ꢀ
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
122
1.37
8.56
1.8
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Q
g
V
GS
= 5V, V
DS
= 15V,
I
D
= 9A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(on)
t
r
2.5
Turn-On Delay Time
5.03
4.50
26.33
8.55
Turn-On Rise Time
V
DD
= 15V, V
GEN
= 10V,
Turn-Off Delay Time
R
L
= 15
ꢀ
, R
G
= 6
ꢀ
, I
D
= 1A
t
D(off)
t
f
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
9. Applicable to products manufactured with Data Code “1146” (Nov, 2011) and newer.
10. Short duration pulse test used to minimize self-heating effect.
11. Guaranteed by design. Not subject to product testing.
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July 2014
© Diodes Incorporated
DMG4800LSD
Document number: DS31858 Rev. 7 – 2
DMG4800LSD
30
25
30
25
V
= 10V
GS
V
= 5V
DS
V
= 4.5V
GS
V
= 3.0V
20
15
10
20
15
10
GS
V
= 2.5V
GS
T
= 150°C
A
T
= 85°C
T
= 125°C
5
0
5
0
A
A
T
= 25°C
A
T
= -55°C
V
= 2.0V
A
GS
0
0.5
1
1.5
2
0
0.5
1
1.5
2
2.5
3
3.5
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Typical Transfer Characteristic
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.06
0.05
0.04
0.03
1
V
= 4.5V
GS
0.1
T
T
= 150°C
A
= 125°C
= 85°C
A
A
0.02
T
V
= 2.5V
GS
T
= 25°C
A
A
T
= -55°C
0.01
0
V
= 4.5V
GS
0.01
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3
Typical On-Resistance
vs. Drain Current and Gate Voltage
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and
T
e
mperature
1.6
1.4
0.05
0.04
0.03
1.2
V
= 4.5V
= 10A
GS
V
= 4.5V
1.0
0.8
0.6
0.02
0.01
0
GS
I
D
I
= 10A
D
V
= 10V
V
= 10V
GS
GS
I
= 11.6A
I
= 11.6A
D
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
A
, AMBIENT TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with
T
e
mperature
Fig. 6 On-Resistance Variation with
T
emperature
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July 2014
© Diodes Incorporated
DMG4800LSD
Document number: DS31858 Rev. 7 – 2
DMG4800LSD
2.0
1.6
20
16
T
= 25°C
A
1.2
0.8
12
8
I
= 1mA
D
I
= 250µA
D
4
0
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25
0
25
50
75 100
125 150
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
10,000
10
8
1,000
C
iss
I =
9A
D
6
4
C
oss
100
10
C
rss
2
0
0
2
4
6
8
10 12 14 16
18
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Fig. 10
T
o
tal Gate Charge
Fig. 9 Typical
T
o
tal Capacitance
100,000
10,000
T
= 150°C
= 125°C
A
1,000
100
T
A
T
= 85°C
A
10
1
T
= 25°C
A
T
= -55°C
A
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
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July 2014
© Diodes Incorporated
DMG4800LSD
Document number: DS31858 Rev. 7 – 2
DMG4800LSD
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
JA
JA
R
= 106°C/W
JA
D = 0.02
D = 0.01
D = 0.005
0.01
P(pk)
T
t
1
t
2
– T
= P * R
(t)
J
A
JA
Duty Cycle, D = t
/t
1
2
D = Single Pulse
0.001
0.00001 0.0001
0.001
0.01
0.1
1
10
100
1,000
t
1
, PULSE DUR
A
T
ION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
SO-8
Min
–
0.10
1.30
0.15
0.3
4.85
5.90
3.85
1.27 Typ
–
0.62
0
Dim
A
A1
A2
A3
b
D
E
E1
e
h
Max
1.75
0.20
1.50
0.25
0.5
4.95
6.10
3.95
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
7
°~
9
°
h
°
45
Detail ‘A’
0.35
0.82
8
A2
A3
A
L
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value
(in mm)
X
Y
C1
0.60
1.55
5.4
C1
C2
1.27
C2
Y
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July 2014
© Diodes Incorporated
DMG4800LSD
Document number: DS31858 Rev. 7 – 2
DMG4800LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are
intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
6 of 6
July 2014
© Diodes Incorporated
DMG4800LSD
Document number: DS31858 Rev. 7 – 2
