Diodes-Incorporated-DMG6968U-7

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Diodes-Incorporated-DMG6968U-7
DMG6968U  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance  
Case: SOT23  
.
.
.
25m
Ω
@ V

GS

= 4.5V  
29m
Ω
@ V

GS

= 2.5V  
36m
Ω
@ V

GS

= 1.8V  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Low Input Capacitance  
Terminals: Finish
—
Matte Tin Annealed over Copper Leadframe.  
e3  
Solderable per MIL-STD-202, Method 208  
Fast Switching Speed  
Low Input/Output Leakage  
Terminals Connections: See Diagram Below  
Weight: 0.008 grams (Approximate)  
ESD Protected Up To 2kV  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP Capable (Note 4)  
D
D
G
S
G
Gate Protection  
Diode  
S
ESD PROTECTED TO 2kV  
Top View  
Internal Schematic  
Top View  
Ordering Information
(Note 5)  
Part Number  
DMG6968U-7  
DMG6968UQ-7  
Compliance  
Standard  
Case  
SOT23  
SOT23  
Packaging  
3000/Tape & Reel  
3000/Tape & Reel  
Automotive  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See

r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-
free “Green” products a
re defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally  
the same, except where specified. For more information, please refer to

Marking Information  
2N4 = Product Type Marking Code  
YM = Date Code Marking  
2N4  
Y or
 
= Year (ex: E = 2017)  
Y
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2009  
…
.  
2017  
2018  
2019  
2020  
2021  
2022  
2023  
2024  
2025  
2026  
Code  
W
…
..  
E
F
G
H
I
J
K
L
M
N
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
November 2017  
© Diodes Incorporated  
DMG6968U  
Document number: DS31738 Rev. 7 – 2  

DMG6968U  
Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
V

DSS  

Value  
20  
Unit  
V
Gate-Source Voltage  
±12  
V
V

GSS  

6.5  
5.2  
Steady  
State  
T

A

= +25°C  
T

A

= +70°C  
Continuous Drain Current (Note 6)  
Pulsed Drain Current  
A
A
I

D  

30  
I

DM  

Thermal Characteristics  
Characteristic  
Symbol  
P

D  

Value  
1.3  
Unit  
W
Power Dissipation (Note 6)  
157  
°C/W  
°C  
Thermal Resistance, Junction to Ambient @ T

A

= +25°C  
Operating and Storage Temperature Range  
R

θ
JA  

-55 to +150  
T

J,

T

STG  

Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Drain-Source Breakdown Voltage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
20  
V
µA  
µA  
V
BV

DSS  

I

DSS  

—
1.0  
±10  
—
V

GS

= 0V, I

D

= 250µA  
V

DS

= 20V, V

GS

= 0V  
V

GS

=
10V, V

DS

= 0V  
V

DS

= 0V, I

G

=
250µA  
Zero Gate Voltage Drain Current  
Gate-Source Leakage  
T

J

= +25°C  
I

GSS  

Gate-Source Breakdown Voltage  
ON CHARACTERISTICS (Note 7)  
Gate Threshold Voltage  
±12  
BV

SGS  

0.5  
0.9  
25  
29  
36  
V
m
Ω  
S
V

GS(TH)  

R

DS(ON)  

|Y

fs

|  
21  
23  
28  
8
V

DS

= V

GS

, I

D

= 250µA  
V

GS

= 4.5V, I

D

= 6.5A  
V

GS

= 2.5V, I

D

= 5.5A  
V

GS

= 1.8V, I

D

= 3.5A  
V

DS

= 10V, I

D

= 5A  
Static Drain-Source On-Resistance  
Forward Transfer Admittance  
DYNAMIC CHARACTERISTICS (Note 8)  
Input Capacitance  
151  
91  
pF  
pF  
pF  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
C

iss  

C

oss  

C

rss  

Q

g  

V

DS

= 10V, V

GS

= 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
32  
8.5  
1.6  
2.8  
54  
Gate-Source Charge  
Q

gs  

Q

gd  

t

D(ON)  

t

R  

V

GS

= 4.5V, V

DS

= 10V, I

D

= 6.5A  
Gate-Drain Charge  
Turn-On Delay Time  
Turn-On Rise Time  
66  
V

DD

= 10V, V

GS

= 4.5V,  
R

L

= 10
, R

G

= 6
, I

D

= 1A  
Turn-Off Delay Time  
613  
205  
t

D(OFF)  

t

F  

Turn-Off Fall Time  
Notes:  
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.  
7. Short duration pulse test used to minimize self-heating effect.  
8. Guaranteed by design. Not subject to production testing.  
2 of 6  
November 2017  
© Diodes Incorporated  
DMG6968U  
Document number: DS31738 Rev. 7 – 2  

DMG6968U  
20  
16  
20  
16  
12  
V
= 10V  
GS  
V
= 5V  
DS  
V
= 4.5V  
GS  
V
= 3.0V  
GS  
V
= 2.5V  
GS  
V
= 2.0V  
GS  
12  
V
= 1.5V  
GS  
8
8
4
0

T
A
= 150°C  
4
0
T
= 125°C  
T
= 85°C  
A
A
T
= 25°C  
A
T
= -55°C  
A
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0.5  
1
1.5  
2
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
V

GS

, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristic  
Fig. 1 Typical Output Characteristic  
0.06  
0.05  
0.04  
0.04  
0.03  
V
= 4.5V  
GS  
V
= 1.8V  
GS  
T
= 150°C  
= 125°C  
A
A
T
T
V
= 2.5V  
GS  
0.03  
0.02  
= 85°C  
= 25°C  
A
V
= 4.5V  
GS  
T
T
A
0.02  
0.01  
= -55°C  
A
0.01  
0
0
4
8
12  
I

D

, DRAIN CURRENT (A)  
Fig. 4 Typical On-Resistance  
vs. Drain Current and Temperature  
16  
20  
0
5
10  
15  
20  
25  
30  
I

D

, DRAIN-SOURCE CURRENT (A)  
Fig. 3
 
Typical On-Resistance  
vs. Drain Current and Gate Voltage  
1.6  
1.4  
0.06  
0.05  
V
= 2.5V  
GS  
I
= 5.5A  
D
V
= 4.5V  
0.04  
0.03  
0.02  
V
= 2.5V  
GS  
= 6.5A  
GS  
I
I
= 5.5A  
D
1.2  
1.0  
D
V
= 4.5V  
GS  
= 6.5A  
I
D
0.8  
0.6  
0.01  
0
-50 -25  
T

A

, AMBIENT TEMPERATURE (  
Fig. 5 On-Resistance Variation with
T
e
mperature  
0
25  
50  
75 100
 
125 150  
-50 -25  
0
25  
50  
75 100
 
125 150  
(
°C  
)
T ,
 
AMBIENT TEMPERATURE
(°C)  
Fig. 6 On-Resistance Variation with
T
e
mperature  
A
3 of 6  
November 2017  
© Diodes Incorporated  
DMG6968U  
Document number: DS31738 Rev. 7 – 2  

DMG6968U  
1.4  
1.2  
20  
16  
T
= 25°C  
A
1.0  
12  
8
I
= 250µA  
D
0.8  
0.6  
0.4  
I =
 
1mA  
D

4
0
0.2  
0

0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50 -25  
0
25  
50  
75 100
 
125 150  
V

S
D

, SOURCE-DRAIN VOLTAGE (V)  
Fig. 8 Diode Forward Voltage vs. Current  
T

A

, AMBIENT TEMPERATURE (°C)  
Fig. 7 Gate Threshold Variation vs. Ambient Temperature  
500  
100,000  
10,000  
450  
f = 1MHz  
400  
T
T
= 150°C  
= 125°C  
A
350  
300  
250  
200  
1,000  
100  
A
T
T
= 85°C  
= 25°C  
A
C
iss  
150  

100  
10  
1
C
oss  
T
= -55°C  
A
A
50  
C
rss  
0
0
4
8
12  
16  
20  
0
2
4
6
8
10 12 14 16 18
 
20  
V

D
S

, DRAIN-SOURCE VOLTAGE (V)  
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage  
V

DS

, DRAIN-SOURCE VOLTAGE (V)  
Fig. 9 Typical Total Capacitance  
1
D = 0.7  
D = 0.5  
D = 0.3  
0.1  
D = 0.1  
D = 0.9  
D = 0.05  
R
(t) = r(t) * R  
JA
JA  
D = 0.02  
D = 0.01  
D = 0.005  
R
=
162°C/W  
JA  
0.01  
P(pk)  
T
t
1
t
2
– T
 
= P * R
 
(t)  
J
A
JA  
Duty Cycle, D = t
 
/t  
1
2
D = Single Pulse  
0.001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1,000  
t

1

, PULSE DUR
A
T
ION TIME (s)  
Fig. 11 Transient Thermal Response  
4 of 6  
November 2017  
© Diodes Incorporated  
DMG6968U  
Document number: DS31738 Rev. 7 – 2  

DMG6968U  
Package Outline Dimensions  
Please see

r the latest version.  
SOT23  
All 7°  
H
SOT23  
GAUGE PLANE  
0.25  
Dim  
A
B
C
D
F
G
H
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
J
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
K
K1  
a
M
A
L
L1  
2.05  
3.00  
1.83  
2.90  
0.05  
J
0.013 0.10  
K
K1  
L
L1  
M
a
0.890 1.00 0.975  
0.903 1.10 1.025  
C
B
0.45  
0.25  
0.61  
0.55  
0.55  
0.40  
0.085 0.150 0.110  
0° 8°
 
—  
D
All Dimensions in mm  
G
F
Suggested Pad Layout  
Please see

r the latest version.  
SOT23  
Y
Dimensions Value
 
(in mm)  
C
X
2.0  
0.8  
Y1  
C
X1  
Y
1.35  
0.9  
Y1  
2.9  
X
X1  
5 of 6  
November 2017  
© Diodes Incorporated  
DMG6968U  
Document number: DS31738 Rev. 7 – 2  

DMG6968U  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2017, Diodes Incorporated  
6 of 6  
November 2017  
© Diodes Incorporated  
DMG6968U  
Document number: DS31738 Rev. 7 – 2