Diodes-Incorporated-DMJT9435-13
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DMJT9435
Features
Mechanical Data
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•
Ideally Suited for Automated Assembly Processes
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Case: SOT-223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Low Collector-Emitter Saturation Voltage
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
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Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.115 grams (approximate)
TOR
LLEC
2,4
CO
1
3 E
2 C
C 4
ASE
B
B
1
3
EMITTER
Device Schematic
Top View
Pin Out Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CM
Value
Unit
V
-45
-30
-6
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
-5
A
Continuous Collector Current
Continuous Base Current
-3
A
I
C
-1
A
I
B
Thermal Characteristics
Characteristic
Symbol
Value
1.2
Unit
W
Power Dissipation (Note 3) @ T
A
= 25°C
P
D
104
°C/W
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Power Dissipation (Note 4) @ T
A
= 25°C
R
θ
JA
JA
JA
2
P
D
62.5
°C/W
W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
Power Dissipation @ T
C
= 25°C
R
θ
3
42
P
D
°C/W
°C
Thermal Resistance, Junction to Case @ T
C
= 25°C
Operating and Storage Temperature Range
R
θ
-55 to +150
T
J
, T
STG
Notes:
1. No
purposefully added lead.
2. Diodes
Inc.’s “Green” policy can be found on our websit
e at http://www.diodes.com/products/lead_free/index.php.
3. Device
mounted on FR-4 PCB with minimum recommended pad layout.
4. Device
mounted on FR-4 PCB with 1 inch
2
copper pad layout.
1 of 4
December 2008
© Diodes Incorporated
DMJT9435
Document number: DS31622 Rev. 2 – 2
DMJT9435
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
-30
-6
V
V
V
(BR)CEO
V
(BR)EBO
⎯
⎯
⎯
⎯
⎯
-20
I
C
= -10mA
E
= -50
μ
A
I
⎯
μ
A V
CB
= -25V, R
BE
= 200
Ω
Collector-Base Cutoff Current
I
CER
I
EBO
V
CB
= -25V, R
BE
= 200
Ω
,
T
A
= 125°C
-200
-10
⎯
⎯
⎯
⎯
μ
A
Emitter-Base Cutoff Current
μ
A V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
125
110
90
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-210
-275
-550
183
-1.25
-1.1
V
V
V
CE
= -1V, I
C
= -0.8A
CE
= -1V, I
C
= -1.2A
CE
= -1V, I
C
= -3A
DC Current Gain
h
FE
⎯
-100
I
C
= -0.8A, I
B
= -20mA
I
C
= -1.2A, I
B
= -20mA
I
C
= -3A, I
B
= -300mA
Collector-Emitter Saturation Voltage
mV
V
CE(SAT)
⎯
-250
83
Equivalent On-Resistance
R
CE(SAT)
V
BE(SAT)
V
BE(ON)
m
Ω
I
C
= -3.0A, I
B
= -300mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
V
⎯
⎯
I
C
= -3A, I
B
= -300mA
V
CE
= -4V, I
C
= -1.2A
V
V
CE
= -10V, I
C
= -100mA,
Transition Frequency
160
MHz
f
T
⎯
⎯
f = 100MHz
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
45
150
pF
pF
C
obo
C
ibo
⎯
⎯
V
CB
= -10V, f = 1MHz
V
EB
= -8V, f = 1MHz
140
⎯
200
90
ns
ns
ns
ns
ns
ns
t
on
t
d
t
r
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
CC
= -15V, I
C
= -1.2A,
Delay Time
I
B1
= -20mA
Rise Time
110
155
100
55
Turn-Off Time
t
off
t
s
V
CC
= -15V, I
C
= -1.2A,
Storage Time
I
B1
= I
B2
= -20mA
Fall Time
t
f
Notes:
5. Measured
under pulsed conditions.
Pulse width = 300
μ
s. Duty
cycle
≤
2%.
2.0
1.0
I
= -5mA
= -4mA
1.6
0.8
0.6
0.4
B
I
B
1.2
Note 4
I
I
= -3mA
= -2mA
B
B
0.8
Note 3
0.2
0
0.4
I
= -1mA
B
0
0
4
8
12
16
20
0
25
T
A
, AMBIENT TEMPERATURE (
Fig. 1 Power Dissipation vs. Ambient
T
e
mperature
50
75
100
125
150
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
°
C)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
2 of 4
December 2008
© Diodes Incorporated
DMJT9435
Document number: DS31622 Rev. 2 – 2
DMJT9435
10
1
1,000
V
= -1V
CE
I
/I =
10
B
C
T
T
= 150°C
A
= 85°C
= 25°C
A
T
= 150°C
T
A
A
T
= 85°C
0.1
A
100
T
= -55°C
A
T
= 25°C
A
T
= -55°C
A
0.01
10
0.001
1
10
100
1,000
10,000
1
10
-I
C
, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
1.2
1.0
V
= -4V
CE
I
/I =
10
B
C
0.8
0.6
0.4
0.8
0.6
T
= -55°C
A
T
T
= -55°C
A
T
= 25°C
= 85°C
A
= 25°C
= 85°C
A
T
A
0.4
T
A
T
= 150°C
A
T
= 150°C
A
0.2
0
0.2
0
1
10
100
1,000
10,000
1
10
100
1,000
10,000
-I
C
, COLLECTOR CURRENT (mA)
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
1,000
100
f = 1MHz
C
ibo
10
1
10
1
C
obo
V
= -10V
CE
f = 100MHz
0
10 20
30 40 50 60
70 80
90 100
-I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
3 of 4
December 2008
© Diodes Incorporated
DMJT9435
Document number: DS31622 Rev. 2 – 2
DMJT9435
Ordering Information
(Note 6)
Part Number
DMJT9435-13
Case
SOT-223
Packaging
2500/Tape & Reel
Notes:
Marking Information
ZPS33 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 – 52
W
YW
ZPS33
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15
0.05
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
—
—
—
—
4.60
2.30
0.85 1.05 0.95
0.84 0.94 0.89
A
A1
Q
All Dimensions in mm
Suggested Pad Layout
X1
Y1
Dimensions Value
(in mm)
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
4 of 4
December 2008
© Diodes Incorporated
DMJT9435
Document number: DS31622 Rev. 2 – 2
