Diodes-Incorporated-DMN1014UFDF-7
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DMN1014UFDF
12V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
16
mΩ
@ V
GS
= 4.5V
25
mΩ
@ V
GS
= 2.5V
8.0A
6.5A
12V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
Applications
e4
per MIL-STD-202, Method 208
Battery Management Application
Power Management Functions
DC-DC Converters
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6
(Type F)
G
S
Pin Out
Top View
Bottom View
Bottom View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN1014UFDF-7
DMN1014UFDF-13
Reel Size (inches)
Case
Quantity per Reel
3,000
7
13
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and
Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
14 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
14
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
Code
D
E
F
G
H
I
J
K
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
DMN1014UFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
12
Unit
V
Gate-Source Voltage
±8
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
8
6
A
Continuous Drain Current, V
GS
= 4.5V (Note 6)
I
D
Pulsed Drain Current (380
μ
s Pulse, Duty Cycle = 1%)
40
2.1
40
A
A
I
DM
I
S
Continuous Source-Drain Diode Current (Note 6)
T
A
= +25°C
Pulsed Source-Drain Diode Current (380
μ
s Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 7)
A
I
SM
I
AS
E
AS
10.8
5.8
A
Avalanche Energy, L = 0.1mH (Note 7)
mJ
Thermal Characteristics
Characteristic
Symbol
Value
0.7
Unit
W
T
A
= +25°C
Total Power Dissipation (Note 5)
P
D
R
θ
JA
P
D
0.4
177
T
A
= +70°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
1.7
T
A
= +25°C
T
A
= +70°C
Steady State
1.0
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
76
°C/W
°C/W
°C
R
θ
JA
R
θ
JC
15.5
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
12
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 9.6V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.3
—
—
12
1.0
16
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 2A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 0V, I
S
= 2A
Static Drain-Source On-Resistance
16
25
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
0.72
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
515
155
121
2.4
6.4
0.3
1.9
3.0
3.6
12.4
4.4
9.5
1.7
—
—
—
—
—
—
—
—
—
—
—
—
—
C
iss
C
oss
C
rss
R
g
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
pF
Ω
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 6V, I
D
= 2A
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Q
g
nC
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
DS
= 6V, V
GS
= 4.5V,
R
g
= 2
Ω
, I
D
= 2A
ns
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
t
RR
I
F
= 2A, di/dt = 200A/
μ
s
I
F
= 2A, di/dt = 200A/
μ
s
nC
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
DMN1014UFDF
30.0
25.0
20.0
15.0
10.0
5.0
10
8
V
GS
= 2.5V
V
GS
= 3.0V
V
GS
= 4.0V
V
DS
= 5V
V
GS
= 4.0V
6
V
GS
= 2.0V
V
GS
= 1.7V
4
125
℃
V
GS
=1.5V
V
GS
= 1.4V
V
GS
= 1.3V
V
GS
= 1.2V
85
℃
25
℃
2
150
℃
-55
℃
0
0.0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.025
0.02
0.015
0.01
0.005
0
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
GS
= 2.50V
V
GS
= 4.50V
I
D
= 2.0A
0
5
10
15
20
0
2
4
6
8
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2
1.5
1
0.021
0.019
0.017
0.015
0.013
0.011
0.009
0.007
0.005
V
GS
= 4.5V
150
℃
V
GS
= 2.5V, I
D
= 5A
125
℃
85
℃
25
℃
V
GS
= 4.5V, I
D
= 10A
0.5
0
-55
℃
1
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
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June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
DMN1014UFDF
1.2
1
0.03
0.025
0.02
0.015
0.01
0.005
0
I
D
= 1mA
V
GS
= 2.5V, I
D
= 5A
0.8
0.6
0.4
0.2
0
I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 10A
-50
-25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
100000
10000
1000
100
15
12
9
f=1MHz
V
GS
= 0V
150
℃
125
℃
85
℃
6
T
J
= 85
℃
10
T
J
= 125
℃
T
J
= 25
℃
25
℃
3
1
T
J
= 150
℃
T
J
= -55
℃
0
0.1
0
0.3
0.6
0.9
1.2
1.5
1
2
3
4
5
6
7
8
9
10 11 12
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Drain-Source Leakge Current vs Voltage
100
10
4.5
4
R
DS(ON)
Limited
P
W
=100µs
3.5
3
2.5
2
1
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
1.5
1
0.1
0.01
V
DS
= 6V, I
D
= 2A
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
P
W
=10s
0.5
0
DC
0
1
2
3
4
5
6
7
0.01
0.1
1
10
100
Qg (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
DMN1014UFDF
500
400
300
200
100
0
Single Pulse
R
θ
JA
= 174
℃
/W
R
θ
JA
(t)=R
θ
JA
* r(t)
T
J
-T
A
=P * R
θ
JA
(t)
0.00001 0.0001
0.001
0.01
t
1
, PULSE DURATION TIME (sec)
Figure 13. Single Pulse Maximum Power Dissipation
0.1
1
10
100
1000
10000
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
0.001
D=0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 174
℃
/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
5 of 7
June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
DMN1014UFDF
Package Outline Dimensions
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57
0.63
0.00 0.05
A3
A1
A
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
z2
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
D2
E
E2
k1
k1
k2
L
e2
L
k
0.36 BSC
0.225 0.325
0.275
0.20 BSC
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
z( 4x)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
6 of 7
June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
DMN1014UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 7
June 2018
© Diodes Incorporated
DMN1014UFDF
D
atasheet number: DS39825 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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