Diodes-Incorporated-DMN10H170SFDE-7
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DMN10H170SFDE
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
I
D
Max
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
160m
Ω
@ V
GS
= 10V
200
mΩ @ V
GS
= 4.5V
2.9A
2.6A
100V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
Applications
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
U-DFN2020-6 (Type E)
D
G
S
Bottom View
Equivalent Circuit
Pin Out
Ordering Information
(Note 4)
Part Number
DMN10H170SFDE-7
DMN10H170SFDE-13
Compliance
Standard
Standard
Case
Quantity Per Reel
3,000
U-DFN2020-6
(
Type E
)
U-DFN2020-6
(
Type E
)
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
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April 2020
© Diodes Incorporated
DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
Marking Information
Site 1:
7H = Product Type Marking Code
YM = Date Code Marking
7H
Y = Year (ex: H = 2020)
M = Month (ex: 9 = September)
Date Code Key
Year
2012
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
Z
…
H
I
J
K
L
M
N
O
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
Site 2:
7H = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: H = 2020)
7H
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2012
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
2
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
27-52
53
A-Z
a-z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
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April 2020
© Diodes Incorporated
DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
100
±20
Unit
V
Gate-Source Voltage
V
V
GSS
Steady
State
T
A
= +25°C
2.9
2.3
A
A
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
3.4
2.7
t<10s
I
D
I
DM
I
S
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7)
10
2.5
4.7
16
A
A
A
I
AS
E
AS
Avalanche Energy (Note 7)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
0.66
0.42
189
132
2.03
1.31
61
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
JA
P
D
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
43
9.3
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
1
100
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 100V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
—
±100
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
2.0
116
126
0.9
3.0
160
200
1.0
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 5.0A
V
GS
= 4.5V, I
D
=5.0A
V
GS
= 0V, I
S
= 10A
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1167
36
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
25
1.3
V
DS
= 0V, V
GS
= 0V, f = 1MHz
4.9
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge
(V
GS
= 10V)
Gate-Source Charge
Q
g
9.7
Q
g
V
DS
= 80V, I
D
= 12.8A
2.0
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
2.0
Turn-On Delay Time
10.5
11.1
42.6
12.8
30.3
35.2
Turn-On Rise Time
V
DS
= 50V, I
D
= 12.8A
V
GS
= 10V, R
G
= 25
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 12.8A, di/dt = 10
0A/μs
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 1.43mH, T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
10
8
10
8
V
= 5.0V
DS
6
4
6
4
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
2
0
2
0
T
= 25°C
A
T
= -55°C
A
1
2
3
4
5
0
0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
1.0
1.5
2.0
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
V
0.20
0.18
0.40
0.35
0.30
V
= 4.5V
GS
V
= 1.8V
V
0.16
0.14
0.12
0.10
0.08
GS
= 2.5V
= 4.5V
GS
T
= 150°C
= 125°C
A
0.25
0.20
0.15
0.10
T
A
V
GS
T
= 85°C
= 25°C
A
0.06
0.04
T
A
T
= -55°C
A
0.05
0
0.02
0
1
2
3
4
5
6
7
8
9
(A)
10
0
2
4
6
8
10
I
D
, DRAIN-SOURCE CURRENT
I
D
, DRAIN CURRENT (A
）
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
2.8
2.6
0.30
0.25
V
= 10V
GS
= 10A
2.4
2.2
2.0
1.8
I
V
= 10V
D
GS
= 10A
I
D
0.20
0.15
0.10
V
= 5V
GS
= 5A
I
D
V
= 5V
GS
= 5A
1.6
1.4
I
D
1.2
1.0
0.8
0.05
0
0.6
0.4
– 50
-25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPER
A
T
URE (
C)
50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5 On-Resistance Variation with
T
emperature
Fig. 6 On-Resistance Variation with
T
e
mperature
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DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
3.0
2.5
2.0
10
9
8
7
6
5
4
3
2
I
D
= 250
μ
A
1.5
1.0
T =
25°C
A
0.5
0
1
0
-50 -25
0
25
50 75 100 125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 7 Gate Threshold Variation vs. A
Junction Temperature
V
S
D
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10
8
C
V
I
= 80V
iss
DS
=
1
2.8 A
D
6
4
C
oss
C
rss
2
0
f = 1MHz
0
10
20
30
40
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
Fig. 10 Gate Charge
100
R
D
S
(
on)
Limi
t
e
d
10
1
DC
P
= 10s
W
0.1
P
= 1s
W
P
= 100ms
W
T
J
(max)
= 150°C
T
A
= 25°C
P
= 10ms
W
0.01
P
= 1ms
P
W
V
GS
= 10V
Single Pul
s
e
DUT on 1 * MRP Board
= 100µs
W
0.001
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOL
T
AGE
(
V)
Figure 11 SOA, Safe Operation Area
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DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
JA
R
JA
=
61°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME
ec)
(s
Transient Thermal Resistance
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April 2020
© Diodes Incorporated
DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
Package Outline Dimensions
U-DFN2020-6 (Type E)
A3
A1
U-DFN2020-6
Type E
A
Dim
Min
Max
Typ
A
A1
A3
b
0.57
0
—
0.63
0.05
—
0.60
0.03
0.15
0.30
D
0.25
0.35
b1
D
D2
E
E2
e
L
L1
K1
K2
Z
0.185 0.285 0.235
1.95
0.85
1.95
1.40
—
2.05
1.05
2.05
1.60
—
2.00
0.95
2.00
1.50
0.65
0.30
0.87
0.305
0.225
0.20
b1
K1
D2
E
E2
L1
L(2X)
0.25
0.82
—
0.35
0.92
—
K2
—
—
—
—
Z(4X)
e
b(6X)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type E)
Value
Dimensions
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
C
X
X1
X2
Y
Y1
Y2
Y3
X2
Y1
Y3 Y2
X1
Y (2x)
X (6x)
C
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© Diodes Incorporated
DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
DMN10H170SFDE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
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© Diodes Incorporated
DMN10H170SFDE
D
atasheet number: DS35901 Rev. 5 – 2
