Diodes-Incorporated-DMN10H220LFDF-13
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DMN10H220LFDF
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
I
D
Max
T
A
= +25°C
2.2A
BV
DSS
R
DS(ON)
Max
225m
Ω
@ V
GS
= 10V
290
mΩ @ V
GS
= 4.5V
100V
1.9A
Mechanical Data
Description and Applications
Case: U-DFN2020-6
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
Load Switch
e4
U-DFN2020-6 (Type F)
D
G
Pin1
S
Pin Out
Bottom View
Top View
Bottom View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
Case
Quantity Per Reel
DMN10H220LFDF-7
DMN10H220LFDF-13
U-DFN2020-6
(Type F)
U-DFN2020-6
(Type F)
3,000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U-DFN2020-6 (Type F)
22 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
22
W = Week (ex: a = Week 27; z Represents Week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
Code
G
H
I
J
K
L
M
N
O
P
R
S
Week
Code
1-26
27-52
a-z
53
A-Z
z
Internal Code
Code
Sun
T
Mon
U
Tue
V
Wed
W
Thu
X
Fri
Y
Sat
Z
1 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
DMN10H220LFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
100
Unit
V
Gate-Source Voltage
±20
V
V
GSS
T
A
= +25°C
T
A
= +70°C
2.2
1.7
A
Continuous Drain Current (Note 6) V
GS
= 10V
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 9)
2.2
8.8
8.8
4.7
1.1
A
A
I
S
I
DM
I
SM
I
AS
E
AS
A
L = 0.1mH
L = 0.1mH
A
Avalanche Energy (Note 9)
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
1.1
0.7
Unit
W
T
A
= +25°C
Total Power Dissipation (Note 5)
T
A
= +70°C
110
1.6
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
P
D
T
A
= +25°C
T
A
= +70°C
1.0
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
80
12
R
JA
R
JC
°C/W
°C
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
100
V
BV
DSS
I
DSS
1
V
GS
= 0V, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
µA
nA
100
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
2.5
225
290
1.3
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2A
V
GS
= 4.5V, I
D
= 1A
V
GS
= 0V, I
S
= 2A
174
217
0.8
m
Ω
m
Ω
V
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
384
23
C
iss
C
oss
C
rss
R
G
V
DS
= 25V, f = 1MHz,
V
GS
= 0V
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
17
2.4
3.7
6.7
1.3
2
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
Q
g
nC
ns
V
DD
= 50V, I
D
= 1.6A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
6.2
8.7
7.4
4.2
20
Turn-On Rise Time
V
DD
= 50V, V
GS
= 4.5V,
Turn-Off Delay Time
R
G
= 6.8
Ω
, I
D
= 1.0A
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
S
= 1.1A, dI/dt = 100A/
μ
s
11
n
C
Q
RR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C
.
2 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
DMN10H220LFDF
8.0
6.0
4.0
2.0
0.0
8
6
4
2
0
V
GS
= 8.0V
V
GS
= 10.0V
V
DS
= 10V
V
GS
= 4.5V
V
GS
= 6.0V
V
GS
= 4.0V
T
J
= 125
℃
T
J
= 85
℃
T
J
= 25
℃
T
J
= -55
℃
T
J
= 150
℃
V
GS
= 3.5V
2.5 3
0
0.5
1
1.5
2
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.3
0.25
0.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
GS
= 4.5V
0.15
0.1
V
GS
= 10V
I
D
= 6.0A
0.05
0
2
4
6
8
10 12 14 16 18 20
1
2
3
4
5
6
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2.4
2.2
2
0.5
0.45
0.4
V
GS
= 10V
T
J
= 150
℃
1.8
1.6
1.4
1.2
1
0.35
0.3
V
GS
= 10V, I
D
= 2A
T
J
= 125
℃
T
J
= 85
℃
0.25
0.2
0.15
0.1
T
J
= 25
℃
T
J
= -55
℃
V
GS
= 4.5V, I
D
= 1A
0.8
0.6
0.4
0.05
0
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 6. On-Resistance Variation with Junction
Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
3 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
DMN10H220LFDF
3
2.8
2.6
2.4
2.2
2
0.4
0.35
0.3
I
D
= 1mA
V
GS
= 4.5V, I
D
= 1A
0.25
0.2
1.8
1.6
1.4
1.2
1
I
D
= 250
μ
A
0.15
0.1
V
GS
= 10V, I
D
= 2A
0.8
0.6
0.4
0.05
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
8
6
4
2
0
10000
1000
100
10
f = 1MHz
V
GS
= 0V
C
iss
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
C
oss
T
J
= 150
o
C
T
J
= 125
o
C
C
rss
1
0
0.3
0.6
0.9
1.2
1.5
0
20
40
60
80
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Typical Junction Capacitance
100
10
10
8
R
DS(ON)
Limited
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
1
6
P
W
= 1s
0.1
4
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP
board
V
DS
= 50V, I
D
= 1.6A
P
W
= 10s
0.01
0.001
2
DC
V
GS
= 10V
0
0.1
1
10
100
1000
0
2
4
6
8
Q
g
(nC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
4 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
DMN10H220LFDF
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 100.7
℃
/W
Duty Cycle, D = t1/t2
0.001
1E-05 0.0001 0.001
0.01
0.1
1
10
100
1000 10000
100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
DMN10H220LFDF
Package Outline Dimensions
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57
0.63
0.00 0.05
A3
A1
A
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
z2
D2
E
E2
k1
k1
k2
L
e2
L
k
0.36 BSC
0.225 0.325
0.275
0.20 BSC
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
z(4x)
All Dimensions in mm
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
Value
C
X
Dimensions
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
6 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
DMN10H220LFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
7 of 7
February 2020
© Diodes Incorporated
DMN10H220LFDF
D
atasheet number: DS42084
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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