Diodes-Incorporated-DMN2004VK-7B
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DMN2004VK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Dual N-Channel MOSFET
Case: SOT563
Low On-Resistance
Case Material:
Molded Plastic, “Green” Molding
Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminal Connections: See Diagram
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package
Terminals: Finish – Matte Tin Annealed over Copper Lead
Frame. Solderable
per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
SOT563
ESD PROTECTED
Bottom View
Top View
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
DMN2004VK-7
DMN2004VK-7B
DMN2004VK-13
Case
Packaging
SOT563
SOT563
SOT563
3000/Tape & Reel
8000/Tape & Reel (Note 5)
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
5. Change the pitch from 4mm to 2mm in T& R.
Marking Information
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: G = 2019)
NAB
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2010
…
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
Code
X
…
G
H
I
J
K
L
M
N
O
P
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN2004VK
Document number: DS30865 Rev. 6 – 2
DMN2004VK
Maximum Ratings
(T
A
= +25°C, unless otherwise specified.
）
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
V
8
V
GSS
Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +85°C
540
390
mA
A
I
D
Pulsed Drain Current (
10μs
Pulse, Duty Cycle = 1%)
1.5
I
DM
Thermal Characteristics
(T
A
= +25°C, unless otherwise specified.
）
Characteristic
Total Power Dissipation (Note 6)
Symbol
P
D
Value
250
Unit
mW
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
500
°C/W
R
JA
-55 to +150
°C
T
J,
T
STG
Electrical Characteristics
(T
A
= +25°C, unless otherwise specified.
）
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
V
BV
DSS
I
DSS
1
V
GS
= 0V, I
D
= 10
A
V
DS
= 16V, V
GS
= 0V
V
GS
=
4.5V, V
DS
= 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
A
A
I
GSS
1
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
1.0
V
V
GS(TH)
R
DS(ON)
V
DS
= V
GS
, I
D
= 250
A
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
=10V, I
D
= 0.2A
0.4
0.5
0.7
0.55
0.70
0.9
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
200
0.5
ms
V
1.4
|Y
fs
|
V
SD
V
GS
= 0V, I
S
= 115mA
150
25
pF
pF
pF
C
iss
C
oss
C
rss
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
20
8.0
ns
ns
ns
ns
t
D(ON)
t
R
t
D(OFF)
t
F
V
DD
= 10V, R
L
= 47
Ω
,
I
D
= 200mA. V
GEN
= 4.5V,
R
G
= 10
Ω
Rise Time
13.3
53.5
36.1
Turn-Off Delay Time
Fall Time
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMN2004VK
Document number: DS30865 Rev. 6 – 2
DMN2004VK
0
4
5
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1
Typical Output Characteristics
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Reverse Drain Current vs. Source-Drain Voltage
1
0.1
I
D
,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
(°C)
T
ch
, CHANNEL TEMPERATURE
Fig. 3
Gate Threshold Voltage vs. Channel
T
e
mperature
V
GS
= 5V
Pulsed
T
A
= 125°C
T
A
= 85°C
T
A
= 150°C
T
A
= -55°C
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
6
I
D
, DRAIN CURRENT (A)
Fig. 5
Static Drain-Source On-Resistance vs. Drain Current
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DMN2004VK
Document number: DS30865 Rev. 6 – 2
DMN2004VK
T
j
, JUNCTION TEMPER
A
T
URE (
°
C)
Fig. 8
Static Drain-Source, On-Resistance vs.
T
emperature
I
D
, DRAIN CURRENT (A)
Fig. 7
On-Resistance vs. Drain Current and Gate Voltage
1,000
I
D
, DRAIN CURRENT (mA)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12
Capacitance Variation
Fig. 11
Forward Transfer Admittance vs. Drain Current
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DMN2004VK
Document number: DS30865 Rev. 6 – 2
DMN2004VK
Package Outline Dimensions
SOT563
b
a
a
SOT563
Dim Min
Max Typ
E
E1
A
b
c
D
E
E1
e
0.55 0.60 0.60
0.15 0.30 0.20
0.10 0.18 0.11
1.50 1.70 1.60
1.55 1.70 1.60
1.10 1.25 1.20
L
c
R.01
e
—
—
0.50
e1
D
e1
L
0.90 1.10 1.00
0.10 0.30 0.20
a
8
°
9
°
7
°
All Dimensions in mm
A
Suggested Pad Layout
SOT563
C
X
Value
(in mm)
0.500
1.270
0.600
0.300
1.300
0.670
1.940
Dimensions
Y
C
C1
G
X
X1
Y
Y1
G
C1
Y1
X1
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© Diodes Incorporated
DMN2004VK
Document number: DS30865 Rev. 6 – 2
DMN2004VK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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© Diodes Incorporated
DMN2004VK
Document number: DS30865 Rev. 6 – 2
