Diodes-Incorporated-DMN2005LP4K-7B
| Part # | Diodes-Incorporated-DMN2005LP4K-7B |
Download  | Diodes-Incorporated-DMN2005LP4K-7B |
DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
Low On-Resistance
Case: X2-DFN1006-3
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Case Material: Molded Pl
astic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminal Connections: See Diagram
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
ESD Protected Gate
Terminals: Finish
NiPdAu over Copper leadframe; Solderable
per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
Ultra Low Profile Package
Qualified to AEC-Q101 Standards for High Reliability
Drain
X2-DFN1006-3
Body
Diode
Gate
S
D
Gate
Protection
Diode
Source
G
Top View
Pin-Out
Equivalent Circuit
Bottom View
ESD PROTECTED
Ordering Information
(Note 4)
Part Number
DMN2005LP4K-7
DMN2005LP4K-7B
Marking
DN
DN
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
8
3,000
7
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are def
ined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 7
May 2015
© Diodes Incorporated
DMN2005LP4K
Document number: DS30799 Rev. 8 – 2
DMN2005LP4K
Marking Information
From date code 1527 (YYWW),
this changes to:
DN
DN
Top View
Top View
Bar Denotes Gate and Source Side
Dot Denotes Drain Side
DMN2005LPK-7
DN
Top View
Bar Denotes Gate and Source Side
DN = Part Marking Code
DMN2005LPK-7B
2 of 7
May 2015
© Diodes Incorporated
DMN2005LP4K
Document number: DS30799 Rev. 8 – 2
DMN2005LP4K
Maximum Ratings
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
V
V
GSS
10
Drain Current per element (Note 5)
Continuous
Pulsed (Note 6)
300
350
mA
I
D
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
P
D
R
Value
400
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
280
JA
-65 to +150
T
J
, T
STG
Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (per element) (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
20
V
BV
DSS
I
DSS
10
5
V
GS
= 0V, I
D
= 100µA
µA
µA
V
DS
= 17V, V
GS
= 0V
I
GSS
V
GS
=
8V, V
DS
= 0V
ON CHARACTERISTICS (per element)
(Note 7)
Gate Threshold Voltage
0.53
0.9
V
V
GS(th)
R
DS (ON)
Y
fs
V
DS
= V
GS
, I
D
= 100µA
V
GS
= 4V, I
D
= 10mA
V
GS
= 2.7V, I
D
= 200mA
V
GS
= 2.5V, I
D
= 10mA
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 1.5V, I
D
= 1mA
0.35
0.4
0.45
0.55
0.65
1.5
1.7
1.7
3.5
3.5
Static Drain-Source On-Resistance
Ω
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
40
mS
V
DS
= 3V, I
D
= 10mA
37.1
6.5
pF
pF
pF
C
iss
C
oss
C
rss
t
on
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
4.8
Turn-On Time
Turn-Off Time
4.06
13.7
V
DD
= 10V, R
l
=
47Ω,
V
GEN
= 4.5V,
R
GEN
=
10Ω.
Switching Time
nS
t
off
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width
10µS, Duty Cycle
1%.
7. Short duration pulse test used to minimize self-heating effect.
3 of 7
May 2015
© Diodes Incorporated
DMN2005LP4K
Document number: DS30799 Rev. 8 – 2
DMN2005LP4K
1.5
1.0
2.0
1.5
V
= 4.5V
GS
V
= 5V
DS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.8V
GS
1.0
0.5
T
= 150°C
A
V
V
= 1.5V
= 1.2V
GS
0.5
0
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
0
GS
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
GS
, GATE SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
0.8
0.8
0.6
V
= 4.5V
GS
V
= 1.8V
0.6
0.4
0.2
0
GS
T
= 150°C
= 125°C
A
V
= 2.5V
GS
T
A
0.4
0.2
0
T
= 85°C
= 25°C
= -55°C
A
T
A
V
= 4.5V
GS
T
A
0
0.4
0.8
1.2
1.6
0
0.4
0.8
1.2
1.6
2
I
D
, DRAIN CURRENT (A)
Fig. 4
Typical Drain-Source On-Resistance
vs. Drain Current and
T
e
mperature
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.8
0.6
1.6
V
= 4.5V
GS
= 1.0A
I
D
1.4
1.2
1.0
V
= 2.5.V
GS
= 500mA
I
D
V
= 2.5V
0.4
GS
= 500mA
I
D
0.2
0
V
= 4.5V
GS
= 1.0A
0.8
0.6
I
D
-50 -25
0
25
50
75 100
125 150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPER
A
T
URE (°C)
Fig. 6 On-Resistance Variation with
T
emperature
Fig. 5 On-Resistance Variation with
T
e
mperature
4 of 7
May 2015
© Diodes Incorporated
DMN2005LP4K
Document number: DS30799 Rev. 8 – 2
DMN2005LP4K
1.6
1.2
1.2
1.0
T
= 25°C
A
I
= 1mA
D
0.8
0.6
0.4
I
= 250µA
D
0.8
0.4
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100 125
150
T
A
, AMBIENT TEMPERATURE (°C)
V
SD
, SOURCE-DRAIN VOL
T
A
GE (V)
Fig. 8 Diode Forward Voltage vs. Current
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
60
f = 1MHz
50
40
C
iss
30
20
10
0
C
oss
C
rss
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
5 of 7
May 2015
© Diodes Incorporated
DMN2005LP4K
Document number: DS30799 Rev. 8 – 2
DMN2005LP4K
Package Outline Dimensions
A
A1
X2-DFN1006-3
Dim Min Max Typ
0.40
A1
0.00 0.05 0.03
0.10 0.20 0.15
b2
0.45 0.55 0.50
Seating Plane
A
b
D
b
Pin #1 ID
D
E
e
0.95 1.05 1.00
0.55 0.65 0.60
–
–
0.35
L1
0.20 0.30 0.25
L2
0.20 0.30 0.25
E
b2
e
L3
z
–
–
0.40
0.02 0.08 0.05
All Dimensions in mm
z
L2
L3
L1
Suggested Pad Layout
C
Y
Dimensions Value
(in mm)
C
G1
G2
X
X1
Y
0.70
0.30
0.20
0.40
1.10
0.25
0.70
Y1
G2
Y1
X
G1
X1
6 of 7
May 2015
© Diodes Incorporated
DMN2005LP4K
Document number: DS30799 Rev. 8 – 2
