Diodes-Incorporated-DMN2011UFDF-7
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DMN2011UFDF
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile
–
Ideal for Low Profile Applications
PCB Footprint of 4mm
2
I
D MAX
T
A
= +25°C
BV
DSS
R
DS(ON) MAX
Low Gate Threshold Voltage
Low On-Resistance
11.7A
10.8A
9.5m
Ω
@ V
GS
= 4.5V
11
mΩ @ V
GS
= 2.5V
20V
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
For automotive applications requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP
capable, and manufactured in IATF 16949 certified facilities),
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: U-DFN2020-6
General Purpose Interfacing Switch
Power Management Functions
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
NiPdAu over Copper Leadframe. Solderable
e4
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
D
U-DFN2020-6(Type F)
G
Gate Protection
Diode
ESD PROTECTED
Pin1
S
Pin Out
Bottom View
Equivalent Circuit
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMN2011UFDF-7
DMN2011UFDF-13
Case
Reel Size (inches)
Quantity per Reel
3,000
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
7
13
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-
free/ for more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defin
ed as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
1 of 8
February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
Marking Information
Site 1
N2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: H = 2020)
N2
M = Month (ex: 9 = September)
Date Code Key
Year
2016
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
D
…
H
I
J
K
L
M
N
O
P
R
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
Site 2
D5 = Product Type Marking Code
YWX = Date Code Marking
Y = Year (ex: 0 = 2020)
N2
W = Week (ex: a = week 27; z represents week 52 and 53)
X = Internal Code (ex: U = Monday)
Date Code Key
Year
2016
…
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
Code
6
…
0
1
2
3
4
5
6
7
8
9
Week
Code
1-26
27-52
a-z
53
A-Z
z
Internal Code
Code
Sun
Mon
Tue
Wed
Thu
Fri
Sat
T
U
V
W
X
Y
Z
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February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
State
T
A
= +25°C
11.7
9.3
A
A
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 4.5V
14.2
11.4
t<10s
I
D
I
DM
I
S
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Notes 7) L = 0.1mH
Avalanche Energy (Notes 7) L = 0.1mH
80
2.5
18
17
A
A
A
I
AS
E
AS
mJ
Thermal Characteristics
Characteristic
Symbol
Value
0.73
Unit
T
A
= +25°C
Total Power Dissipation (Note 5)
W
P
D
R
JA
P
D
0.47
175
128
2.1
1.3
61
T
A
= +70°C
Steady State
t<10s
T
A
= +25°C
T
A
= +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
45
9.3
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
20
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μA
V
DS
= 16V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
A
A
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±10
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.4
—
—
6.5
7.5
10
1.0
9.5
11
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 7A
V
GS
= 2.5V, I
D
= 7A
V
GS
= 1.8V, I
D
= 5A
V
GS
= 1.5V, I
D
= 3A
V
GS
= 0V, I
S
= 8.5A
Static Drain-Source On-Resistance
20
15
35
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
0.7
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2248
295
265
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance 4
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
24
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Q
g
56
Q
g
V
DS
= 10V, I
D
= 8.5A
3.5
Q
gs
Q
gd
t
D(ON)
t
R
5.1
Gate-Drain Charge
3.6
Turn-On Delay Time
2.6
Turn-On Rise Time
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
g
= 1.8
Ω
21.6
13.5
12.8
6.9
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
T
RR
Q
RR
I
F
= 8.5A, di/dt = 21
0A/μs
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
V
= 10V
GS
V
= 5.0V
DS
= 4.5V
GS
V
V
= 4.0V
= 3.5V
GS
GS
V
V
= 3.0V
GS
V
= 1.5V
= 2.5V
GS
GS
= 2.0V
T
= 150°C
A
V
GS
T
= 125°C
A
T =
85°C
A
T
= 25°C
A
V
= 1.2V
GS
T
= -55°C
A
V
= 1.0V
GS
0.0
0
0
0.5
1
1.5
2
2.5
3
0
0.2 0.4 0.6 0.8
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
1
1.2 1.4 1.6 1.8
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
0.03
0.025
0.02
0.015
0.01
0.005
0
I
= 8.5A
D
I
= 3.0A
D
V
= 1.5V
GS
V
= 1.8V
= 2.5V
GS
V
GS
V
= 4.5V
GS
0
2
4
6
8
10
12
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristics
0.016
0.014
0.012
0.01
2
1.6
1.2
0.8
0.4
V
= 4.5V
GS
V
= 2.5V
= 5A
GS
I
D
T
T =
150°C
A
T
A
= 125°C
0.008
0.006
0.004
0.002
0
T
A
= 85°C
V
= 1.8V
I =
3A
D
GS
T
A
= 25°C
T
A
= -55°C
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with
T
emperature
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and
T
e
mperature
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February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
0.02
0.018
0.016
0.014
0.012
0.01
1
0.8
0.6
0.4
0.2
0
V
= 1.8V
= 3A
GS
I
I
= 1mA
D
D
I
D
=250
A
V
= 2.5V
GS
0.008
0.006
0.004
0.002
0
I
= 5A
D
-50 -25
0
25
50
75 100 125
150
-50 -25
0
25
50
75 100
125 150
T
J
, JUNCTION TEMPERATURE (
C)
T
J
, JUNCTION TEMPER
A
T
URE (
C)
Junction Temperature
Figure 8 Gate Threshold Variation vs.
Figure 7 On-Resistance Variation with
T
e
mperature
10000
30
25
f = 1MHz
C
iss
20
15
10
5
T
= 150°C
A
T
= 125°C
A
1000
T
T
= 85°C
= 25°C
A
A
C
oss
T
= -55°C
A
C
rss
100
0
0
2
4
6
8
10 12 14 16 18 20
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
10
9
1000
100
R
DS(ON)
Limited
8
7
6
5
4
3
2
10
1
V
I
= 10V
DS
= 8.5A
D
DC
P
= 10s
W
P =
1s
W
P
= 100ms
W
T
= 150°C
P
= 10ms
W
J(MAX)
P
= 1ms
W
P
0.1
T
= 25°C
A
= 100µs
W
V
= 4.5V
GS
Single Pulse
DUT on 1 * MRP Board
1
0
0.01
0.01
0
10
20
30
40
50
60
0.1
1
10
100
Q
g
, TO
T
A
L GATE CHARGE (nC)
Figure 11 Gate Charge
V
D
S
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
5 of 8
February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
JA
(t) = r(t) * R
JA
°
C/W
R
JA
= 207
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
1
10
100 1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
6 of 8
February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
Package Outline Dimensions
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57
0.63
0.00 0.05
A3
A1
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
–
–
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a
0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325
0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z(4x)
Suggested Pad Layout
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
7 of 8
February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
DMN2011UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2020, Diodes Incorporated
8 of 8
February 2020
© Diodes Incorporated
DMN2011UFDF
D
atasheet number: DS37734 Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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