Diodes-Incorporated-DMN2013UFDE-7
| Part # | Diodes-Incorporated-DMN2013UFDE-7 |
Download  | Diodes-Incorporated-DMN2013UFDE-7 |
DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
I
D
0.6mm profile – ideal for low profile
applications
PCB footprint of 4mm
2
V
(BR)DSS
R
DS(ON) MAX
Package
T
A
= +25°C
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
10.5A
9.4A
6.5A
5.5A
11m
@ V
GS
= 4.5V
13m
Ω
@ V
GS
= 2.5V
30m
@ V
GS
= 1.8V
50m
Ω
@ V
GS
= 1.5V
Low Gate Threshold Voltage
ESD Protected Gate
20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
Mechanical Data
)
Case: U-DFN2020-6
performance, making it ideal for high efficiency power management
applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
Applications
Drain
per MIL-STD-202, Method 208
e4
General Purpose Interfacing Switch
Power Management Functions
Weight: 0.0065 grams (approximate)
U-DFN2020-6
Gate
Gate
Protection
Diode
ESD PROTECTED
Source
Bottom View
Pin Out
Equivalent Circuit
Ordering Information
(Note 5)
Part Number
Compliance
Standard
Automotive
Standard
Case
Quantity per reel
DMN2013UFDE-7
DMN2013UFDEQ-7
DMN2013UFDE-13
DMN2013UFDEQ-13
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
3,000
3,000
10,000
10,000
Automotive
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer
to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
N6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
N6
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 – 2
DMN2013UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Units
V
V
Gate-Source Voltage
±8
V
GSS
T
A
= +25°C
A
= +70°C
Steady
State
10.5
8.5
A
A
A
A
I
D
I
D
I
D
I
D
T
Continuous Drain Current (Note 7) V
GS
= 4.5V
Continuous Drain Current (Note 7) V
GS
= 2.5V
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
12.5
10.0
t < 10s
Steady
State
9.4
7.5
T
A
= +70°C
A
= +25°C
T
11.2
8.8
t <1 0s
T
A
= +70°C
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
80
A
A
I
DM
I
S
2.5
Thermal Characteristics
Characteristic
Symbol
P
D
Value
0.66
Units
T
A
= +25°C
Total Power Dissipation (Note 6)
W
0.42
189
132
2.03
1.31
61
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
°C/W
W
R
JA
P
D
Thermal Resistance, Junction to Ambient (Note 7)
R
JA
43
9.3
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
R
JC
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 16V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
µA
µA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±2
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.5
—
—
8.4
9.8
12
15
10
—
1.1
11
13
30
50
—
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
V
V
V
V
GS
= 4.5V, I
D
= 8.5A
GS
= 2.5V, I
D
= 8.5A
GS
= 1.8V, I
D
= 1A
GS
= 1.5V, I
D
= 0.5A
Static Drain-Source On-Resistance
R
DS (ON)
m
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
—
—
S
V
|Y
fs
|
V
SD
V
DS
= 5V, I
D
= 4A
1.2
V
GS
= 0V, I
S
= 8.5A
—
—
—
—
—
—
—
—
—
—
—
—
2453
275
257
1.2
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ꢀ
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
14.3
25.8
1.8
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge
(V
GS
= 4.5V)
Total Gate Charge
(V
GS
= 8V)
Gate-Source Charge
Q
g
Q
g
V
DS
= 10V, I
D
= 8.5A
Q
gs
Q
gd
t
D(on)
t
r
2.1
Gate-Drain Charge
9.9
Turn-On Delay Time
24.5
66.4
20.8
Turn-On Rise Time
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8
ꢀ
Turn-Off Delay Time
t
D(off)
t
f
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
2 of 6
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 – 2
DMN2013UFDE
30
25
20
20
15
10
V
= 5.0V
DS
15
10
T
= 150°C
A
T
= 125°C
A
5
0
T
= 85°C
A
5
0
T
A
= 25°C
A
T
= -55°C
0
0.5
1
1.5
2
V
GS
, GATE-SOURCE VOLTAGE
Fig.2 Typical
Transfer Characteristics
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
0.020
0.015
0.020
0.015
V
= 4.5V
GS
V
= 1.5V
GS
V
T
= 125°C
T
= 150°C
A
A
0.010
= 1.8V
0.010
GS
T
T
= 85°C
= 25°C
A
V
V
= 2.5V
= 4.5V
GS
GS
A
T
= -55°C
A
0.005
0
0.005
0
0
4
8
12
16
20
0
5
10
15
20
I
D
, DRAIN-SOURCE CURRENT
I
D
, DRAIN CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance vs.
Drain Current and
T
e
mperature
1.8
1.6
0.020
0.015
V
= 2.5V
= 5A
GS
V
= 2.5V
= 5A
GS
I
D
1.4
1.2
1.0
I
D
0.010
V
= 4.5V
= 10A
GS
I
D
V
= 4.5V
GS
I
= 10A
D
0.005
0
0.8
0.6
– 50
-25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 6 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
50 -25
T
J
, JUNCTION TEMPER
A
T
URE (
Fig. 5 On-Resistance Variation with
T
e
mperature
0
25
50
75 100
125 150
C)
C)
3 of 6
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 – 2
DMN2013UFDE
1.4
1.2
20
15
1.0
0.8
0.6
0.4
T
= 25°C
I
= 1mA
A
10
D
I
= 250µA
D
5
0
0.2
0
-50 -25
T
J
, JUNCTION TEMPERATURE (
Fig. 7 Gate Threshold Variation vs. Ambient
T
e
mperature
0
25
50 75 100 125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
C)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
10
8
V
= 10
V
, I
=
8
.5A
DS
D
C
iss
6
4
1,000
C
oss
2
0
C
rss
f = 1MHz
100
0
5
10
15
20
25
30
35 40
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE
(nC)
Fig. 9 Typical Junction Capacitance
Fig. 10 Gate Charge
100
10
R
DS(on)
P
= 100µs
W
Limited
DC
= 10s
P
1
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
0.1
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 8V
Single Pulse
DUT on 1 * MRP Board
0.01
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOL
T
A
GE (V)
Fig. 11 SOA, Safe Operation Area
4 of 6
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 – 2
DMN2013UFDE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
R
R
= r
* R
(t)
JA
= 65
C/W
JA(t)
JA
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
Package Outline Dimensions
A3
A1
U-DFN2020-6
Type E
A
Dim
Min
Max
Typ
A
A1
A3
b
0.57
0
—
0.63
0.05
—
0.60
0.03
0.15
0.30
D
0.25
0.35
b1
0.185 0.285 0.235
D
D2
E
E2
e
L
L1
K1
K2
Z
1.95
0.85
1.95
1.40
—
0.25
0.82
—
2.05
1.05
2.05
1.60
—
0.35
0.92
—
2.00
0.95
2.00
1.50
0.65
0.30
0.87
0.305
0.225
0.20
b1
K1
D2
E
E2
L1
L(2X)
K2
—
—
—
—
Z(4X)
e
b(6X)
All Dimensions in mm
Suggested Pad Layout
Value
Dimensions
(in mm)
C
X
X1
X2
Y
Y1
Y2
Y3
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
X2
Y1
Y3 Y2
X1
Y (2x)
X (6x)
C
5 of 6
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 – 2
DMN2013UFDE
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
6 of 6
April 2013
© Diodes Incorporated
DMN2013UFDE
Document number: DS35701 Rev. 7 – 2
