Diodes-Incorporated-DMN2022UNS-7
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DMN2022UNS
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
Features
Low On-Resistance
Low Input Capacitance
I
D
max
T
A
= +25°C
V
(BR)DSS
R
DS(ON)
max
Fast Switching Speed
10.8m
@ V
GS
= 4.5V
14.5m
@ V
GS
= 2.5V
17.0m
@ V
GS
= 1.8V
10.7A
9.3A
8.6A
Low Input/Output Leakage
20V
Complementary Pair MOSFET
ESD Protected Up to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free.
“Green” Device (Note 3)
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
)
Mechanical Data
Case: POWERDI
®
3333-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Applications
Power Management Functions
Load Switch
e3
Weight: 0.0065 grams (Approximate)
POWERDI
®
3333-8
D2
S2
D1
Pin 1
S1
G1
S2
G2
G2
G1
Gate Protection
Diode
Gate Protection
Diode
ESD PROTECTED
S1
D1
D1
D2
D2
Internal Schematic
Top View
Bottom View
Ordering Information
(Note 4)
Part Number
DMN2022UNS-7
DMN2022UNS-13
Case
Packaging
2000/Tape & Reel
3000/Tape & Reel
POWERDI
®
3333-8
POWERDI
®
3333-8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com fo
r more information about
Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
S23 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 = 2015)
WW = Week Code (01 to 53)
S23
POWERDI is a registered trademark of Diodes Incorporated.
1 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
DMN2022UNS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Units
V
V
Gate-Source Voltage
±10
V
GSS
Steady
State
T
A
= +25°C
10.7
8.6
A
A
I
D
I
D
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Continuous Drain Current (Note 6) V
GS
= 10V
13.9
11.1
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10
s pulse, Duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2
A
A
I
S
60
I
DM
I
AS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
P
D
Value
1.2
Units
W
Total Power Dissipation (Note 5)
Steady State
107
64
1.9
67
40
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
t<10s
P
D
R
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
°C/W
°C
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
1
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
µA
µA
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
±10
I
GSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.4
—
—
—
—
—
—
—
9.0
1
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 4.5V, I
D
= 4A
V
GS
= 4.0V, I
D
= 4A
V
GS
= 3.1V, I
D
= 4A
V
GS
= 2.5V, I
D
= 4A
V
GS
= 1.8V, I
D
= 4A
V
GS
= 0V, I
S
= 5A
10.8
11.2
13.0
14.5
17.0
1.1
9.2
Static Drain-Source On-Resistance
9.8
10.5
13.9
0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
1870
320
160
96
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= 0V, V
GS
= 0V, f = 1MHz
20.3
2.8
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Q
g
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 6.5A
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
3.6
62
Turn-On Delay Time
101
596
224
150
135
Turn-On Rise Time
V
GS
= 4.5V, V
DS
= 10V,
R
G
= 6
Ω
, R
L
= 1.0
Ω
Turn-Off Delay Time
t
D(OFF)
t
F
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 4A, di/dt = 100A/
μ
s
I
F
= 4A, di/dt = 100A/
μ
s
Q
RR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
.
8 .Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
2 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
DMN2022UNS
30.0
25.0
20.0
15.0
10.0
5.0
20
18
16
14
12
10
8
V
GS
= 10.0V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.7V
V
DS
= 5V
V
GS
=3.1V
V
GS
= 1.5V
V
GS
=2.5V
V
GS
=2.0V
125
℃
85
℃
6
V
GS
=1.8V
4
25
℃
V
GS
= 1.2V
V
GS
= 1.0V
150
℃
2
-55
℃
0
0.0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
3
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
Figure 1. Typical Output Characteristic
0.05
0.04
0.03
0.02
0.01
0
0.025
0.02
0.015
0.01
0.005
0
V
GS
= 1.8V
V
GS
= 3.1V
V
GS
= 2.5V
V
GS
= 4.0V
V
GS
= 4.5V
I
D
= 4.0A
0
2
4
6
8
10
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.02
0.015
0.01
0.005
0
2.5
2
V
GS
= 4.5V
150
℃
125
℃
85
℃
V
GS
= 3.1V, I
D
= 4A
1.5
1
25
℃
V
GS
= 4.5V, I
D
= 4A
-55
℃
0.5
0
0
5
10
15
20
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
POWERDI is a registered trademark of Diodes Incorporated.
3 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
DMN2022UNS
1.2
1
0.03
0.025
0.02
0.015
0.01
0.005
0
I
D
= 1mA
0.8
0.6
0.4
0.2
0
V
GS
= 3.1V, I
D
= 4A
V
GS
= 4.5V, I
D
= 4A
I
D
= 250
μ
A
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
Figure 7. On-Resistance Variation with Junction
Temperature
10
8
20
15
10
5
V
GS
= 0V
6
T
J
= 85
o
C
4
V
DS
= 10V, I
D
= 6.5A
T
J
= 125
o
C
T
J
= 25
o
C
2
T
J
= 150
o
C
T
J
= -55
o
C
0
0
0
0.3
0.6
0.9
1.2
1.5
0
5
10 15 20 25 30 35 40 45 50
Q
g
(nC)
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Gate Charge
100
10
P
W
=100µs
R
DS(ON)
Limited
P
W
=1ms
P
W
=10ms
P
W
=100ms
1
P
W
=1s
P
W
=10s
0.1
0.01
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
DC
0.01
0.1
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated.
4 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
DMN2022UNS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
0.001
D=0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 114
℃
/W
Duty Cycle, D = t1 / t2
D=0.005
D=Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 12. Transient Thermal Resistance
POWERDI is a registered trademark of Diodes Incorporated.
5 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
DMN2022UNS
Package Outline Dimensions
POWERDI
®
3333-8 (Type UXB)
A
D
D1
A1
POWERDI
®
3333-8
(Type UXB)
Dim Min
Max Typ
E1 E
A
0.75 0.85 0.80
A1
0.00 0.05
—
b
c
D
0.25 0.40 0.32
0.10 0.25 0.15
3.20 3.40 3.30
c
D1
2.95 3.15 3.05
D2
0.10 0.35 0.23
L
E
3.20 3.40 3.30
E1
2.95 3.15 3.05
E2
0.10 0.30 0.20
D2
e
L
a
0.65
0.35 0.55 0.45
0
°
12
°
10
°
E2
All Dimensions in mm
L
b
e
Suggested Pad Layout
POWERDI
®
3333-8 (Type UXB)
X1
Dimensions Value
(in mm)
C
X
X1
Y
0.650
0.420
2.370
0.730
3.500
Y
Y1
Y1
Y
X
C
POWERDI is a registered trademark of Diodes Incorporated.
6 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
DMN2022UNS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
POWERDI is a registered trademark of Diodes Incorporated.
7 of 7
November 2015
© Diodes Incorporated
DMN2022UNS
Document number: DS38050
Rev. 2
–
2
