Diodes-Incorporated-DMN2025U-7
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DMN2025U
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low On-Resistance
I
D
Max
BV
DSS
R
DS(ON)
Max
Low Input Capacitance
T
A
= +25°C
Fast Switching Speed
27m
Ω
@ V
GS
= 4.5V
35m
Ω
@ V
GS
= 2.5V
5.6
ESD Protected Gate
20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
4.9
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) yet maintain superior switching performance, which makes it
ideal for high-efficiency power management applications.
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish—Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
•
•
•
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
•
•
D
D
G
S
G
ESD protected Gate
Gate Protection
Diode
S
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMN2025U-7
Case
SOT23
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
05U = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: E = 2017)
M = Month (ex: 9 = September)
05U
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
Code
E
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
20
Unit
V
Gate-Source Voltage
±12
V
V
GSS
Steady
State
T
A
= +25°C
T
A
= +70°C
5.6
4.9
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
I
D
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
1.4
40
A
A
I
S
I
DM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
0.8
162
Unit
W
P
D
R
ϴ
JA
P
D
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
98
°C/W
°C
R
ϴ
JA
T
J,
T
STG
-55 to +150
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
20
—
—
—
1.0
±10
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250µA
µA
µA
Zero Gate Voltage Drain Current
Gate-Source Leakage
T
J
= +25°C
V
DS
= 20V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
I
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
—
—
20
0.9
27
V
m
Ω
V
V
GS(TH)
R
DS(ON)
V
SD
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.5A
V
GS
= 1.8V, I
D
= 3.5A
V
GS
= 0V, I
D
= 5A
Static Drain-Source On-Resistance
26.7
49.1
0.8
35
65
Diode Forward Voltage
—
1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
485
91
pF
pF
pF
Ω
C
iss
C
oss
C
rss
R
g
V
DS
= 10V, V
GS
= 0V
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0MHz
77
3.1
5.9
12
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
ns
nC
Q
g
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
t
D(ON)
t
R
V
GS
= 4.5V, V
DS
= 10V, I
D
= 6.5A
0.8
3.4
5.4
18
Turn-On Delay Time
Turn-On Rise Time
V
DS
= 10V, V
GS
= 4.5V,
R
L
= 10
Ω
, R
g
= 6
Ω
, I
D
= 1A
Turn-Off Delay Time
Turn-Off Fall Time
t
D(OFF)
t
F
9.3
7.7
1.5
Reverse Recovery Time
Reverse Recovery Charge
t
RR
I
F
= 1.0A, di/dt = 100A/
μ
s
I
F
= 1.0A, di/dt = 100A/
μ
s
Q
RR
Notes:
5. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
10
8
20.0
18.0
16.0
14.0
12.0
10.0
8.0
V
GS
= 2.5V
V
GS
=3.0V
V
DS
= 5V
V
GS
= 4.0V
V
GS
= 4.5V
6
V
GS
= 10.0V
V
GS
= 2.0V
V
GS
= 1.5V
4
T
J
=125
℃
6.0
T
J
=150
℃
T
J
=85
℃
T
J
=25
℃
2
4.0
2.0
V
GS
= 1.2V
4 5
T
J
=-55
℃
0
0.0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.06
0.055
0.05
0.1
0.08
0.06
0.04
0.02
0
V
GS
= 1.8V
0.045
0.04
I
D
= 6.5A
I
D
= 3.5A
0.035
0.03
0.025
0.02
V
GS
= 2.5V
V
GS
= 4.5V
0.015
0.01
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.035
0.03
1.8
1.6
1.4
1.2
1
V
GS
= 4.5V
T
J
=150
℃
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 2.5V, I
D
= 5.5A
0.025
0.02
T
J
=125
℃
T
J
=85
℃
V
GS
= 1.8V, I
D
= 3.5A
T
J
=25
℃
T
J
=-55
℃
0.015
0.01
0.8
0.6
0
2
4
6
8
10 12 14 16 18 20
-50
-25
0
25
50
75
100 125 150
I
D
, DRAIN CURRENT (A)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 5. Typical On-Resistance vs. Drain Current and
Junction Temperature
Figure 6. On-Resistance Variation with Junction
Temperature
3 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
1.2
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
I
D
= 1mA
0.8
0.6
0.4
0.2
0
V
GS
= 1.8V, I
D
= 3.5A
V
GS
= 2.5V, I
D
= 5.5A
I
D
= 250
μ
A
V
GS
= 4.5V, I
D
= 6.5A
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
℃
)
T
J
, JUNCTION TEMPERATURE (
℃
)
Figure 7. On-Resistance Variation with Junction
Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
20
18
16
14
12
10
8
f=1MHz
V
GS
= 0V
1000
100
10
C
iss
C
oss
T
J
= 85
℃
6
T
J
= 125
℃
T
J
= 25
℃
C
rss
4
T
J
= 150
℃
T
J
= -55
℃
2
0
0
0.3
0.6
0.9
1.2
1.5
0
4
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
R
DS(ON)
Limited
P
W
=100µs
P
W
=1ms
P
W
=10ms
6
1
P
W
=100ms
P
W
=1s
4
V
DS
= 10V, I
D
= 6.5A
P
W
=10s
0.1
0.01
T
J(Max)
= 150
℃
T
C
= 25
℃
Single Pulse
DUT on 1*MRP Board
2
DC
10
V
GS
= 4.5V
0
0.1
1
100
0
2
4
6
8
10
12
14
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Qg (nC)
Figure 11. Gate Charge
4 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
θ
JA
= 162
℃
/W
Duty Cycle, D = t1 / t2
R
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
5 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
Package Outline Dimensions
SOT23
All 7°
H
SOT23
GAUGE PLANE
0.25
Dim
A
B
C
D
F
G
H
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
0° 8°
—
D
All Dimensions in mm
G
F
Suggested Pad Layout
SOT23
Y
Dimensions Value
(in mm)
C
X
2.0
0.8
Y1
C
X1
Y
1.35
0.9
Y1
2.9
X
X1
6 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
7 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
DMN2025U
8 of 8
October 2018
© Diodes Incorporated
DMN2025U
Document number: DS40477
Rev. 2 – 2
Mouser Electronics
Authorized Distributor
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